Patent classifications
C01B33/06
Thermoelectric material, thermoelectric module, and producing method of thermoelectric material
There is provided a thermoelectric material including a compound which is formed of an element R belonging to alkaline earth metal and lanthanoid, and an element X belonging to any of Group 13 elements, Group 14 elements, and Group 15 elements. The composition ratio of the element R and the element X is selected to obtain the compound having an AlB.sub.2 type structure.
New process for manufacturing a chromium alloyed molybdenum silicide portion of a heating element
A process of manufacturing a chromium alloyed molybdenum silicide portion of a heating element comprising the steps of: forming a mixture of a chromium powder and a silicon powder; reacting the mixture to a reaction product in an inert atmosphere at a temperature of at least 1100° C. but not more than 1580° C.; converting the reaction product to a powder comprising CrSi.sub.2; forming a powder ceramic composition by mixing the powder comprising CrSi.sub.2 with a MoSi.sub.2 powder and optionally with an extrusion aid; forming the portion of the heating element; and sintering the portion of the heating element in a temperature of from about 1450° C. to about 1700° C.; characterized in that the chromium powder and the silicon powder are provided separately to the mixture.
New process for manufacturing a chromium alloyed molybdenum silicide portion of a heating element
A process of manufacturing a chromium alloyed molybdenum silicide portion of a heating element comprising the steps of: forming a mixture of a chromium powder and a silicon powder; reacting the mixture to a reaction product in an inert atmosphere at a temperature of at least 1100° C. but not more than 1580° C.; converting the reaction product to a powder comprising CrSi.sub.2; forming a powder ceramic composition by mixing the powder comprising CrSi.sub.2 with a MoSi.sub.2 powder and optionally with an extrusion aid; forming the portion of the heating element; and sintering the portion of the heating element in a temperature of from about 1450° C. to about 1700° C.; characterized in that the chromium powder and the silicon powder are provided separately to the mixture.
ACTIVE MATERIAL, ANODE LAYER, BATTERY, AND METHODS FOR PRODUCING THESE
A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, and having a composition represented by Na.sub.xSi.sub.136, wherein 1.98<x<2.54.
NEGATIVE-ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERIES, AND SECONDARY BATTERY
A negative electrode active material for a secondary battery includes an intermetallic compound having a cage structure. The cage structure is constituted of at least one first atom located within a cage, and a plurality of second atoms arranged in a cage-like form so as to surround the first atom. The first atom is a cerium atom, and the plurality of the second atoms include 8 or more and 17 or less silicon atoms.
NANOPARTICLES OF CO COMPLEXES OF ZERO-VALENT METALS THAT CAN BE USED AS HYDROSILYLATION AND DEHYDROGENATIVE SILYLATION CATALYSTS
Nanoparticles that can be used as hydrosilylation and dehydrogenative silylation catalysts. The nanoparticles have at least one transition metal with an oxidation state of 0, chosen from the metals of columns 8, 9 and 10 of the periodic table, and at least one carbonyl ligand, preferably a silicide.
LIGHT-EMITTING OR LIGHT-ABSORBING COMPONENT
The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si.sub.1−xGe.sub.x compound material, said Hex-Si.sub.1−xGe.sub.x compound material having a direct band gap for emitting light.
The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S.sub.1−xGe.sub.x compound material, said Hex-Si.sub.1−xGe.sub.x compound material having a direct band gap for absorbing light.
LIGHT-EMITTING OR LIGHT-ABSORBING COMPONENT
The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si.sub.1−xGe.sub.x compound material, said Hex-Si.sub.1−xGe.sub.x compound material having a direct band gap for emitting light.
The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S.sub.1−xGe.sub.x compound material, said Hex-Si.sub.1−xGe.sub.x compound material having a direct band gap for absorbing light.
Method for preparing hydrocarbylhydrocarbyloxysilanes
A method for preparing a hydrocarbylhydrocarbyloxysilane of formula R.sub.aH.sub.pSi(OR)(4.sub.-a-b), where each R is independently a hydrocarbyl group and subscript a is 1 to 4 and subscript b is 1 to 2 is disclosed. The method includes heating ingredients including a hydrocarbyl carbonate and a source of silicon and catalyst. The method can be used to make dimethyldimethoxysilane.
Active Material
An active material comprising silicon and a compound represented by M.sub.xSi.sub.y, where x and y satisfy 0.1≤x/y≤7.0, and M represents one or more metalloid elements other than Si and metal elements, wherein the content of Si elements is more than 50 wt %, the content of M is less than 38 wt %, and the content of oxygen elements is less than 30 wt %; D.sub.50 and D.sub.max are less than 4.0 μm and less than 25 μm, respectively; and in an X-ray diffraction pattern measured by an X-ray diffractometer (XRD) using CuKα1 rays, the full width at half maximum of a peak A appearing at 2θ=28.42°±1.25° is 0.25° or more, and when the peak intensity of a peak B belonging to the compound is defined as I.sub.B and the peak intensity of the peak A is defined as I.sub.A, the ratio (I.sub.A/I.sub.B) of the I.sub.A to the I.sub.B is less than 1.