A main object of the present disclosure is to provide a novel active material whose volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material having a composition represented by Na.sub.xM.sub.ySi.sub.46, wherein M is a metal element other than Na, x and y satisfy 0<x, 0≤y, y≤x and 0<x+y<8, and comprising a crystal phase of a Type I silicon clathrate.

A main object of the present disclosure is to provide a novel active material of which volume change due to charge and discharge is small. The present disclosure achieves the object by providing a method for producing an active material having a composition represented by Na.sub.xM.sub.ySi.sub.46 (M is a metal element other than Na, x and y satisfy 0<x, 0≤y, y≤x, and 0<x+y<8), and a silicon clathrate I type crystal phase, the method comprising: a preparing step of preparing a precursor compound having the silicon clathrate I type crystal phase; and a liquid treatment step of bringing the precursor compound into contact with a polar liquid so as to desorb a Na element from the precursor compound and obtain the active material.

A main object of the present disclosure is to provide a novel active material of which volume change due to charge and discharge is small. The present disclosure achieves the object by providing a method for producing an active material having a composition represented by Na.sub.xM.sub.ySi.sub.46 (M is a metal element other than Na, x and y satisfy 0<x, 0≤y, y≤x, and 0<x+y<8), and a silicon clathrate I type crystal phase, the method comprising: a preparing step of preparing a precursor compound having the silicon clathrate I type crystal phase; and a liquid treatment step of bringing the precursor compound into contact with a polar liquid so as to desorb a Na element from the precursor compound and obtain the active material.

A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm.sup.2 on the sputtering surface.

The present invention relates to a process for the synthesis of a composite material comprising steps of: (a) reacting gaseous magnesium (Mg) and silica (SiO.sub.2) in an inert atmosphere; (b) washing the product obtained in step (a) in an acidic medium; and (c) reacting further gaseous magnesium (Mg) with the silica (SiO.sub.2) and silicon (Si) product obtained in step (b).

The process of the invention allows Mg.sub.2Si/MgO nanocomposites to be prepared without too many separate steps, and wherein the MgO phase is homogeneously dispersed within the Mg.sub.2Si matrix. The nanocomposites obtained may for example find practical application as thermoelectric materials in thermoelectric generators.

The present invention relates to a process for the synthesis of a composite material comprising steps of: (a) reacting gaseous magnesium (Mg) and silica (SiO.sub.2) in an inert atmosphere; (b) washing the product obtained in step (a) in an acidic medium; and (c) reacting further gaseous magnesium (Mg) with the silica (SiO.sub.2) and silicon (Si) product obtained in step (b).

The process of the invention allows Mg.sub.2Si/MgO nanocomposites to be prepared without too many separate steps, and wherein the MgO phase is homogeneously dispersed within the Mg.sub.2Si matrix. The nanocomposites obtained may for example find practical application as thermoelectric materials in thermoelectric generators.

A method of additively manufacturing a structure comprises nuclear reactor comprises disposing a feed material on a surface of a substrate in a reaction vessel, disposing at least one material formulated and configured to react with the feed material in the reaction vessel, and exposing the feed material and the at least one material to energy from an energy source to react the feed material and the at least one material to form an additive manufacturing material and reaction by-products. The additive manufacturing material is separated from the reaction by-products and exposed to energy from the energy source to form inter-granular bonds between particles of the additive manufacturing material and form a layer of a structure comprising the additive manufacturing material. Related apparatuses and methods are disclosed.

A method of additively manufacturing a structure comprises nuclear reactor comprises disposing a feed material on a surface of a substrate in a reaction vessel, disposing at least one material formulated and configured to react with the feed material in the reaction vessel, and exposing the feed material and the at least one material to energy from an energy source to react the feed material and the at least one material to form an additive manufacturing material and reaction by-products. The additive manufacturing material is separated from the reaction by-products and exposed to energy from the energy source to form inter-granular bonds between particles of the additive manufacturing material and form a layer of a structure comprising the additive manufacturing material. Related apparatuses and methods are disclosed.

Method for manufacturing fluoro(hydro)carbon-substituted silicon or germanium quantum dots which comprises the steps of:—reacting a Zintl salt or intermetallic compound of post-transition metals or metalloids of silicon or germanium with a halogen-containing oxidizing agent to form halide-terminated silicon or germanium quantum dots,—reacting the halide-terminated silicon or germanium quantum dots with a fluoro(hydro)carbon agent selected from the group of metal-fluoro (hydro)carbon compounds of the formula MRq, wherein M is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, q is an integer which corresponds to the valence of the metal, and R is CFnHm-fluoro/hydro-carbon, wherein n is 1 or 2, m is 0 or 1, and the total of n and m is 2, wherein each R may be the same or different, metal-fluoro (hydro)carbon halide compounds of the formula NQaRp wherein N is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, Q is a halogen selected from F, Cl, Br, or I, wherein each Q may be the same or different, a and p are integers in the range of 1-3, and the total of a and p corresponds to the valence of the metal, and R is as defined above, and metal-fluoro (hydro)carbon compounds of the formula CuR2Li, wherein R is as defined above, to form fluoro(hydro)carbon-substituted silicon or germanium quantum dots. The method makes it possible to obtain quantum dots with a tailored emission spectrum with high quality in a stable process. The particles obtained by this process are also claimed.

Method for manufacturing fluoro(hydro)carbon-substituted silicon or germanium quantum dots which comprises the steps of:—reacting a Zintl salt or intermetallic compound of post-transition metals or metalloids of silicon or germanium with a halogen-containing oxidizing agent to form halide-terminated silicon or germanium quantum dots,—reacting the halide-terminated silicon or germanium quantum dots with a fluoro(hydro)carbon agent selected from the group of metal-fluoro (hydro)carbon compounds of the formula MRq, wherein M is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, q is an integer which corresponds to the valence of the metal, and R is CFnHm-fluoro/hydro-carbon, wherein n is 1 or 2, m is 0 or 1, and the total of n and m is 2, wherein each R may be the same or different, metal-fluoro (hydro)carbon halide compounds of the formula NQaRp wherein N is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, Q is a halogen selected from F, Cl, Br, or I, wherein each Q may be the same or different, a and p are integers in the range of 1-3, and the total of a and p corresponds to the valence of the metal, and R is as defined above, and metal-fluoro (hydro)carbon compounds of the formula CuR2Li, wherein R is as defined above, to form fluoro(hydro)carbon-substituted silicon or germanium quantum dots. The method makes it possible to obtain quantum dots with a tailored emission spectrum with high quality in a stable process. The particles obtained by this process are also claimed.