The invention provides disilenes, germasilenes and neopentatetrelanes, a method for the preparation thereof and use thereof.

The invention provides disilenes, germasilenes and neopentatetrelanes, a method for the preparation thereof and use thereof.

A method of making a trihalosilane comprising contacting an organotrihalosilane according to the formula RS1X3 (I), wherein R is C.sub.1-C.sub.10 hydrocarbyl and each X independently is halo, with hydrogen, wherein the mole ratio of the organotrihalosilane to hydrogen is from 0.009:1 to 1:2300, in the presence of a catalyst comprising a metal selected from (i) Re, (ii) a mixture comprising Re and at least one element selected from Pd, Ru, Mn, Cu, and Rh, (iii) a mixture comprising Ir and at least one element selected from Pd and Rh, (iv) Mn, (v) a mixture comprising Mn and Rh, (vi) Ag, (vii) Mg, and (viii) Rh at from 300 to 800 C. to form a trihalosilane.

A nano silicon material having reduced amounts of oxygen (O) and chlorine (Cl) contained therein is provided.

The nano silicon material contains fluorine (F) and nano-sized silicon crystallites. Generation of a layer in which oxygen (O) and chlorine (Cl) are present is suppressed due to the presence of fluorine (F), so that a decrease in the moving speed of lithium ions is suppressed. In addition, due to the presence of fluorine (F), the concentrations of oxygen (O) and chlorine (Cl) are reduced, so that reaction thereof with lithium ions is suppressed.

A nano silicon material having reduced amounts of oxygen (O) and chlorine (Cl) contained therein is provided.

The nano silicon material contains fluorine (F) and nano-sized silicon crystallites. Generation of a layer in which oxygen (O) and chlorine (Cl) are present is suppressed due to the presence of fluorine (F), so that a decrease in the moving speed of lithium ions is suppressed. In addition, due to the presence of fluorine (F), the concentrations of oxygen (O) and chlorine (Cl) are reduced, so that reaction thereof with lithium ions is suppressed.

A sulfide-based solid electrolyte has an argyrodite-type crystal structure which is doped with an element having an oxidation number of 4 and a transition metal having an oxidation number of 6 so as to improve moisture stability and ionic conductivity of the sulfide-based solid electrolyte.

A sulfide-based solid electrolyte has an argyrodite-type crystal structure which is doped with an element having an oxidation number of 4 and a transition metal having an oxidation number of 6 so as to improve moisture stability and ionic conductivity of the sulfide-based solid electrolyte.

A sulfide solid electrolyte includes: a Li element; a P element; a S element; and a Ha element. The sulfide solid electrolyte has an argyrodite crystal structure. The crystal structure includes a plurality of PS.sub.4 tetrahedrons where the P element may be substituted and at least a part of the S elements may be substituted. The crystal structure includes 16 elements serving as the vertices of the PS.sub.4 tetrahedrons T.sub.1 in a unit cell. When the 16 elements are made to correspond to 16 S elements constituting vertices corresponding to 16e sites of PS.sub.4 tetrahedrons T.sub.2 in a space group F-43m, an average value of a distance between respective positions of the 16 elements in the PS.sub.4 tetrahedrons T.sub.1 and respective positions of the 16 S elements in the PS.sub.4 tetrahedrons T.sub.2 corresponding thereto is 0.05 to 0.30 .

A sulfide solid electrolyte includes: a Li element; a P element; a S element; and a Ha element. The sulfide solid electrolyte has an argyrodite crystal structure. The crystal structure includes a plurality of PS.sub.4 tetrahedrons where the P element may be substituted and at least a part of the S elements may be substituted. The crystal structure includes 16 elements serving as the vertices of the PS.sub.4 tetrahedrons T.sub.1 in a unit cell. When the 16 elements are made to correspond to 16 S elements constituting vertices corresponding to 16e sites of PS.sub.4 tetrahedrons T.sub.2 in a space group F-43m, an average value of a distance between respective positions of the 16 elements in the PS.sub.4 tetrahedrons T.sub.1 and respective positions of the 16 S elements in the PS.sub.4 tetrahedrons T.sub.2 corresponding thereto is 0.05 to 0.30 .

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.