Patent classifications
C01B33/113
METHOD OF DEPOSITING SILICON OXIDE FILMS
Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.
SILICON-OXYGEN COMPOUND, METHOD FOR PREPARATION THEREOF, AND RELATED SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK AND APPARATUS
The present application discloses a silicon-oxygen compound, a method for preparation thereof, and a secondary battery, a battery module, a battery pack and an apparatus related thereto. The silicon-oxygen compound includes both manganese element and a copper element, a content of the manganese element is from 20 ppm to 500 ppm, and a mass ratio of the manganese element to the copper element is from 1 to 18.
SILICON-OXYGEN COMPOUND, METHOD FOR PREPARATION THEREOF, AND RELATED SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK AND APPARATUS
The present application discloses a silicon-oxygen compound, a method for preparation thereof, and a secondary battery, a battery module, a battery pack and an apparatus related thereto. The silicon-oxygen compound includes both manganese element and a copper element, a content of the manganese element is from 20 ppm to 500 ppm, and a mass ratio of the manganese element to the copper element is from 1 to 18.
Lithium doped silicon oxide-based negative electrode material and method of manufacturing the same
[Problem] Provided is a silicon oxide-based negative electrode material capable of avoiding, as much as possible, decreased battery performance resulting from a heterogeneous distribution of a Li concentration. [Solution] Provided is a powder having an average composition of SiLi.sub.xO.sub.y wherein 0.05<x<y<1.2 and a mean particle size of 1 μm or more. Further, 10 particles randomly selected from particles of the powder each satisfy 0.8<L1/L2<1.2 with the standard deviation of L2 being 0.1 or less, L1 being a Li concentration at a depth of 50 nm from an outermost surface of each of the 10 particles, and L2 being a Li concentration at a depth of 400 nm from the outermost surface.
Lithium doped silicon oxide-based negative electrode material and method of manufacturing the same
[Problem] Provided is a silicon oxide-based negative electrode material capable of avoiding, as much as possible, decreased battery performance resulting from a heterogeneous distribution of a Li concentration. [Solution] Provided is a powder having an average composition of SiLi.sub.xO.sub.y wherein 0.05<x<y<1.2 and a mean particle size of 1 μm or more. Further, 10 particles randomly selected from particles of the powder each satisfy 0.8<L1/L2<1.2 with the standard deviation of L2 being 0.1 or less, L1 being a Li concentration at a depth of 50 nm from an outermost surface of each of the 10 particles, and L2 being a Li concentration at a depth of 400 nm from the outermost surface.
SILICON-OXYGEN COMPOUND, SECONDARY BATTERY USING IT, AND RELATED BATTERY MODULE, BATTERY PACK AND DEVICE
The present application provide a silicon-oxygen compound, a secondary battery using it, and related battery modules, battery packs, and devices. The silicon-oxygen compound provided by the present application has a formula of SiO.sub.x, in which x satisfies 0<x<2. The silicon-oxygen compound contains both sulfur and aluminum element, and the sulfur element is present in an amount of 20 ppm˜300 ppm. The mass ratio of sulfur element to aluminum element is from 1.5 to 13.0. A secondary battery uses the silicon-oxygen compound provided in the present application, so that the secondary battery can have both long-cycle performance and high initial coulombic efficiency.
WINDOW MODULE AND DISPLAY DEVICE INCLUDING THE SAME
A window module includes: a window; a first anti-reflection layer disposed on the window; and a second anti-reflection layer disposed on the first anti-reflection layer, including magnesium fluoride and having a refractive index smaller than a refractive index of the first anti-reflection layer.
WINDOW MODULE AND DISPLAY DEVICE INCLUDING THE SAME
A window module includes: a window; a first anti-reflection layer disposed on the window; and a second anti-reflection layer disposed on the first anti-reflection layer, including magnesium fluoride and having a refractive index smaller than a refractive index of the first anti-reflection layer.
MULTIAMINE LIGANDS FOR NANOPARTICLE SOLUBILIZATION AND INK COMPOSITIONS CONTAINING NANOPARTICLES CAPPED WITH THE LIGANDS
Ligand-capped scattering nanoparticles, curable ink compositions containing the ligand-capped scattering nanoparticles, and methods of forming films from the ink compositions are provided. Also provided are cured films formed by curing the ink compositions and photonic devices incorporating the films. The ligands bound to the inorganic scattering nanoparticles include a head group and a tail group. The head group includes a polyamine chain and binds the ligands to the nanoparticle surface. The tail group includes a polyalkylene oxide chain.
MULTIAMINE LIGANDS FOR NANOPARTICLE SOLUBILIZATION AND INK COMPOSITIONS CONTAINING NANOPARTICLES CAPPED WITH THE LIGANDS
Ligand-capped scattering nanoparticles, curable ink compositions containing the ligand-capped scattering nanoparticles, and methods of forming films from the ink compositions are provided. Also provided are cured films formed by curing the ink compositions and photonic devices incorporating the films. The ligands bound to the inorganic scattering nanoparticles include a head group and a tail group. The head group includes a polyamine chain and binds the ligands to the nanoparticle surface. The tail group includes a polyalkylene oxide chain.