This invention describes the encapsulation of and self-assembly of meso (nano) porous silica particles from inorganic an inexpensive silica precursor, sodium silicate. The particles have a well defined shape, high surface area, and high uniformity of the pore size, the properties that are typically found for high quality mesoporous material synthesized from organic silica precursors. The disclosure illustrates a synthesis of hard spheres, discoids, and a mixture comprising discoids, gyroids and fibers, termed as origami.

Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Ligand-capped scattering nanoparticles, curable ink compositions containing the ligand-capped scattering nanoparticles, and methods of forming films from the ink compositions are provided. Also provided are cured films formed by curing the ink compositions and photonic devices incorporating the films. The ligands bound to the inorganic scattering nanoparticles include a head group and a tail group. The head group includes a polyamine chain and binds the ligands to the nanoparticle surface. The tail group includes a polyalkylene oxide chain.

Ligand-capped scattering nanoparticles, curable ink compositions containing the ligand-capped scattering nanoparticles, and methods of forming films from the ink compositions are provided. Also provided are cured films formed by curing the ink compositions and photonic devices incorporating the films. The ligands bound to the inorganic scattering nanoparticles include a head group and a tail group. The head group includes a polyamine chain and binds the ligands to the nanoparticle surface. The tail group includes a polyalkylene oxide chain.

To produce a silicon oxide-based negative electrode material containing Li and having uniform distribution of a Li concentration both inside particles and between particles although a C-coating film is formed on a surface, and yet in which generation of SiC is suppressed. A SiO gas and a Li gas are simultaneously generated by heating a Si-lithium silicate-containing raw material under reduced pressure. The Si-lithium silicate-containing raw material includes Si, Li, and O, in which a part of the Si is present as a Si simple substance and the Li is present as lithium silicate. By cooling the generated gases, Li-containing silicon oxide having an average composition of SiLi.sub.xO.sub.y (0.05<x<y and 0.5<y<1.5 are satisfied) is prepared. After adjusting the particle size, a C-coating film having an average film thickness of 0.5 to 10 nm is formed on a surface of particles at a treatment temperature of 900° C. or less.

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

A silicon oxide deposit is continuously prepared by feeding a powder feed containing silicon dioxide powder to a reaction chamber, heating the feed at 1,200-1,600° C. to produce a silicon oxide vapor, delivering the vapor to a deposition chamber through a transfer line which is maintained at or above the temperature of the reaction chamber, for thereby causing silicon oxide to deposit on a cool substrate, and removing the silicon oxide deposit from the deposition chamber. Two deposition chambers are provided, and the step of delivering the vapor is alternately switched from one to another deposition chamber.

A silicon oxide deposit is continuously prepared by feeding a powder feed containing silicon dioxide powder to a reaction chamber, heating the feed at 1,200-1,600° C. to produce a silicon oxide vapor, delivering the vapor to a deposition chamber through a transfer line which is maintained at or above the temperature of the reaction chamber, for thereby causing silicon oxide to deposit on a cool substrate, and removing the silicon oxide deposit from the deposition chamber. Two deposition chambers are provided, and the step of delivering the vapor is alternately switched from one to another deposition chamber.