The invention relates to multi-atomic layer borophene and a method of synthesizing multi-atomic layer borophene. The multi-atomic layer borophene comprises bilayer (BL) borophene. The BL borophene is BL-? borophene comprising two covalently bonded ?-phase borophene monolayers and being metallic and in form of a highly faceted island with a six-fold symmetric Moir? superlattice surrounded by full-coverage intermixed SL v.sub.1/5 and v.sub.1/6 borophene. The BL-? borophene nucleates and emerges at intersections of multiple SL borophene domains. The synthesizing method includes depositing boron on a substrate with atomically flat terraces at a temperature in an ultrahigh vacuum (UHV) chamber to grow multi-atomic layer borophene beyond a full coverage of single-atomic layer (SL) borophene.

The invention relates to multi-atomic layer borophene and a method of synthesizing multi-atomic layer borophene. The multi-atomic layer borophene comprises bilayer (BL) borophene. The BL borophene is BL-? borophene comprising two covalently bonded ?-phase borophene monolayers and being metallic and in form of a highly faceted island with a six-fold symmetric Moir? superlattice surrounded by full-coverage intermixed SL v.sub.1/5 and v.sub.1/6 borophene. The BL-? borophene nucleates and emerges at intersections of multiple SL borophene domains. The synthesizing method includes depositing boron on a substrate with atomically flat terraces at a temperature in an ultrahigh vacuum (UHV) chamber to grow multi-atomic layer borophene beyond a full coverage of single-atomic layer (SL) borophene.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000 C. to 1600 C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

A suspension of a boron containing compound in the form of crystals, powder or granulate in a solvent which contain a carbomer as dispersant. This suspension is very stable, even at high concentrations, and exhibits favourable non-Newtonian viscosity behavior, which makes it suitable in a number of applications, such as for the control of fission reactions with the generation of electric power from nuclear energy.

Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a substrate, and exposing the substrate to hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method includes providing a substrate containing a metal oxide film, exposing the substrate to HF gas to form a fluorinated surface layer on the metal oxide film, and exposing the substrate to a boron-containing gas to remove the fluorinated surface layer from the metal oxide film. The exposures may be repeated at least once to further etch the metal oxide film.

A boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension and a method for preparation thereof.

A boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension and a method for preparation thereof.

There is provided a headset having at least one microphone for detecting ambient noises, at least one electroacoustic reproduction transducer and a control unit for controlling the headset. The headset also has a digital active noise reduction unit for performing digital active noise reduction based on the ambient noises recorded by the microphone. The headset further has a data interface for receiving data and/or parameters for the headset and for outputting data and/or parameters stored in the headset.

Provided are boron nanoparticles. The boron nanoparticles can be made by pyrolysis of a boron precursor (e.g., a boron hydride such as, for example, diborane) using a photosensitizer and electromagnetic radiation of an appropriate wavelength. The boron nanoparticles can be functionalized. The boron nanoparticles can be hydrogen-containing boron nanoparticles (e.g., hydrogen-terminated boron nanoparticles). Also provided are methods of hydrogen generation using boron nanoparticles, an activator, and water. Examples of activators include, but are not limited to, Li, Na, K, LiH, NaH, and combinations thereof.

A powder boronizing composition comprising: a. 0.5 to 4.5 wt % of a boron source selected from B.sub.4C, amorphous boron, calcium hexaboride, borax or mixtures thereof; b. 45.5 to 88.5 wt % of a diluent selected from SiC, alumina or mixtures thereof; c. 1.0 to 20.0 wt % of an activator selected from KBF.sub.4, ammonia chloride, cryolite or mixtures thereof; and d. 10.0 to 30.0 wt % of a sintering reduction agent selected from carbon black, graphite or mixtures thereof.