There is provided a method of producing boron trichloride, in which damage to a reaction container is inhibited. The method of producing boron trichloride includes performing reaction between chlorine gas in a gas containing the chlorine gas and particulate boron carbide (4) in a state in which the boron carbide (4) flows in the gas containing the chlorine gas.

A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B.sub.2F.sub.4.

A powder boronizing composition comprising: a. 0.5 to 4.5 wt % of a boron source selected from B.sub.4C, amorphous boron, calcium hexaboride, borax or mixtures thereof; b. 45.5 to 88.5 wt % of a diluent selected from SiC, alumina or mixtures thereof; c. 1.0 to 20.0 wt % of an activator selected from KBF.sub.4, ammonia chloride, cryolite or mixtures thereof; and d. 10.0 to 30.0 wt % of a sintering reduction agent selected from carbon black, graphite or mixtures thereof.

The present invention relates, in general, to the purification of boron trichloride (BCl.sub.3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl.sub.4) formation in BCl.sub.3 production and/or the removal of SiCl.sub.4 in BCl.sub.3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl.sub.4 present to SiH.sub.4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl.sub.4 from BCl.sub.3 that has been partially purified to remove light boilers.

A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B.sub.2F.sub.4.

A boron filled hybrid nanotube and a method for producing and rendering boron filled hybrid nanotubes suitable for applications are provided. A mixture of a boron containing nanowire producing compound and catalysts is prepared and ground for a predetermined time period. The ground mixture is subjected to a vapor deposition process including passing an inert gas over the ground mixture after adding a nanotube producing compound to the ground mixture or after passing a reactant gas on the ground mixture in a reactor at a configurable reaction temperature and a configurable reaction pressure for a configurable reaction time to produce the boron filled hybrid nanotubes with enhanced mechanical, thermal and electrical properties. Each boron filled hybrid nanotube includes one or more boron based nanowires embedded within one or more single walled or multi-walled nanotubes. The boron filled hybrid nanotubes are further purified and functionalized using acids, and/or bases, and/or surfactants.

Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a substrate, and exposing the substrate to hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method includes providing a substrate containing a metal oxide film, exposing the substrate to HF gas to form a fluorinated surface layer on the metal oxide film, and exposing the substrate to a boron-containing gas to remove the fluorinated surface layer from the metal oxide film. The exposures may be repeated at least once to further etch the metal oxide film.

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B.sub.2F.sub.4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

The present invention relates, in general, to the purification of boron trichloride (BCl.sub.3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl.sub.4) formation in BCl.sub.3 production and/or the removal of SiCl.sub.4 in BCl.sub.3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl.sub.4 present to SiH.sub.4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl.sub.4 from BCl.sub.3 that has been partially purified to remove light boilers.

The present invention is directed to an organic polymerizable composition for producing a molded polymeric article. The composition includes a mold release agent of ionic fluoride and/or ionic fluoride precursor present in an amount sufficient to effect at least partial demolding of the polymeric article from a mold. Molded articles also are provided.