The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.

The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.

The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.

The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.

The present application discloses a QLED manufacturing method, which includes following steps of: providing a substrate provided with a bottom electrode, and preparing a quantum dot light emitting layer on the substrate; illuminating after depositing a first compound solution on a surface of the quantum dot light emitting layer, here a first compound is a compound capable of being photodegraded into ions after the illumination.

A method for manufacturing a quantum dot film is provided. A substrate plate is provided. A plurality of quantum dot material layers capable of emitting light having different colors are sequentially formed on the substrate plate, wherein at least one of the quantum dot material layers includes a plurality of quantum dots. A local crosslinking process is performed on at least one of the quantum dot material layers, so as to crosslink the crosslinkable ligands in a region emitting light having a corresponding color in the quantum dot material layer. A fluorescence quenching process is performed on the quantum dot material layer subjected to the local crosslinking process, so as to quench the fluorescence of quantum dots outside the region emitting light having the corresponding color in the quantum dot material layer. A display panel and a method for manufacturing the same are also provided.

A method for manufacturing a quantum dot film is provided. A substrate plate is provided. A plurality of quantum dot material layers capable of emitting light having different colors are sequentially formed on the substrate plate, wherein at least one of the quantum dot material layers includes a plurality of quantum dots. A local crosslinking process is performed on at least one of the quantum dot material layers, so as to crosslink the crosslinkable ligands in a region emitting light having a corresponding color in the quantum dot material layer. A fluorescence quenching process is performed on the quantum dot material layer subjected to the local crosslinking process, so as to quench the fluorescence of quantum dots outside the region emitting light having the corresponding color in the quantum dot material layer. A display panel and a method for manufacturing the same are also provided.

A process for reducing the hydrogen sulphide content in a composition containing or consisting of hydrogen sulphide and non-gaseous elemental sulphur, comprising contacting the composition with a scavenger, wherein the scavenger is chosen from the group consisting of zinc oxide, zinc carbonate, zinc hydroxy carbonate or a combination of two or more of these.

A process for reducing the hydrogen sulphide content in a composition containing or consisting of hydrogen sulphide and non-gaseous elemental sulphur, comprising contacting the composition with a scavenger, wherein the scavenger is chosen from the group consisting of zinc oxide, zinc carbonate, zinc hydroxy carbonate or a combination of two or more of these.

A method is provided for producing an article which is transparent to IR wavelength in the region of 4 μm to 9 μm. The method includes the steps of (a) Producing ultra-fine powders of ZnS, (b) followed by pretreatment of the ultra-fine powders under reduced gas conditions including H2, H2S, N2, Ar and mixtures there of (c) followed by vacuum (3×10.sup.−6 torr) treatment to remove oxygen and sulfates adsorbed to the surface disposing a plurality of nano-particles on a substrate, wherein said nanoparticles comprise ZnS with ultra-high purity of cubic phase; (b) subjecting the nano-particles to spark plasma sintering thereby producing a sintered ZnS product with IR transmission reaching 75% in the wavelength range of 4 μm to 9 μm.