Provided is a semiconductor nanoparticle complex dispersion liquid in which semiconductor nanoparticles are dispersed in a polar dispersion medium at a high mass fraction, and in which high fluorescence quantum efficiency (QY) is maintained. A semiconductor nanoparticle complex dispersion liquid according to an embodiment includes a semiconductor nanoparticle complex dispersed in an organic dispersion medium, wherein: the semiconductor nanoparticle complex is composed of two or more ligands including an aliphatic thiol ligand and a polar ligand, and a semiconductor nanoparticle with the ligands coordinated to the surface thereof; the ligands are composed of an organic group and a coordinating group; the organic group of the polar ligand includes a hydrophilic functional group; and an SP value of the organic dispersion medium is 8.5 or more.

Provided is a semiconductor nanoparticle complex composition and the like in which a semiconductor nanoparticle complex is dispersed at a high concentration and which has high fluorescence quantum yield. A semiconductor nanoparticle complex composition in which a semiconductor nanoparticle complex is dispersed in a dispersion medium, wherein: the semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated to the surface of the semiconductor nanoparticle; the ligand includes an organic group; the dispersion medium is a monomer or a prepolymer; the semiconductor nanoparticle complex composition further includes a crosslinking agent; and a mass fraction of the semiconductor nanoparticle in the semiconductor nanoparticle complex composition is 30% by mass or more.

The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q.sup.1,Q.sup.2,Q.sup.3,R.sup.1,R.sup.2,R.sup.3,R.sup.5, and X are defined within the specification.

The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q.sup.1,Q.sup.2,Q.sup.3,R.sup.1,R.sup.2,R.sup.3,R.sup.5, and X are defined within the specification.

Embodiments of a population of buffered barrier layer coated nanostructures and a method of making the nanostructures are described. Each of the buffered barrier layer coated nanostructures includes a nanostructure, an optically transparent buffer layer disposed on the nanostructure, and an optically transparent buffered barrier layer disposed on the buffer layer. The buffered barrier layer is configured to provide a spacing between adjacent nanostructures in the population of buffered barrier layer coated nanostructures to reduce aggregation of the adjacent nanostructures. The method for making the nanostructures includes forming a solution of reverse micro-micelles using surfactants, incorporating nanostructures into the reverse micro-micelles, and incorporating a buffer agent into the reverse micro-micelles. The method further includes individually coating the nanostructures with a buffered barrier layer and isolating the buffered barrier layer coated nanostructures with the surfactants of the reverse micro-micelles disposed on the barrier layer.

The present invention relates to laser-markable and laser-weldable polymeric materials which are distinguished by the fact that they comprise, as laser absorber, at least one copper-doped zinc sulfide.

The present invention relates to laser-markable and laser-weldable polymeric materials which are distinguished by the fact that they comprise, as laser absorber, at least one copper-doped zinc sulfide.

A method for preparing zinc sulfide particles is described which comprising the steps (i) preparing a mixture of zinc mineral and elemental sulfur, (ii) milling the mixture obtained in step (i), and (iii) annealing the mixture obtained in step (ii) at a temperature ranging from 300 to 500° C. to obtain zinc sulfide particles.

A method for preparing zinc sulfide particles is described which comprising the steps (i) preparing a mixture of zinc mineral and elemental sulfur, (ii) milling the mixture obtained in step (i), and (iii) annealing the mixture obtained in step (ii) at a temperature ranging from 300 to 500° C. to obtain zinc sulfide particles.

Disclosed are a single-source precursor for synthesizing metal chalcogenide nanoparticles for producing a light absorption layer of solar cells comprising a Group VI element linked as a ligand to any one metal selected from the group consisting of copper (Cu), zinc (Zn) and tin (Sn), metal chalcogenide nanoparticles produced by heat-treating at least one type of the single-source precursor, a method of preparing the same, a thin film produced using the same and a method of producing the thin film.