The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

Provided is a semiconductor nanoparticle complex having both improved fluorescence quantum yield and improved heat resistance. A semiconductor nanoparticle complex according to an embodiment includes a semiconductor nanoparticle complex in which two or more ligands including a ligand I and a ligand II are coordinated to the surface of a semiconductor nanoparticle, wherein: the ligands are composed of an organic group and a coordinating group; the ligand I has one mercapto group as the coordinating group; and the ligand II has at least two or more mercapto groups as the coordinating groups.

A method is provided for producing an article which is transparent to near-wave IR, mid-wave and Long-wave multi-spectral and IR wavelength in the region of 0.4 pm to 16 μm. The method includes the steps of (a) Producing ultra-fine powder of CaLa.sub.2S.sub.4 via SPLTS process, (b) followed by pretreatment of the ultra-fine powder under inert and reducing gas conditions including H.sub.2 or Argon or N.sub.2 or H.sub.2/H.sub.2S, H.sub.2S, and mixtures there of (c) followed by sieving the powder in 140 mesh screen and cold pressing the powder at 7000 psi for 7 min. into a disk shaped green body (d) then Cold-Isostatic Pressing (CIP) at 40,000 psi for 5 min in a rubber mold (e) finally sintered article of CaLa.sub.2S.sub.4 disk of 25.4 mm diameter with ultra-high density containing cubic phase of CaLa.sub.2S.sub.4 to yield IR transmission of a peak value of 57% within the IR wavelength range of 2 μm to 16 μm, either by using microwave sintering followed by hot isostatic press or spark plasma sintering followed by hot isostatic press or vacuum sintering at (3×10.sup.−6 torr) followed by hot isostatic press or hot press sintering followed by hot isostatic press and finally followed by mirror polished IR article, is obtained.

A method is provided for producing an article which is transparent to near-wave IR, mid-wave and Long-wave multi-spectral and IR wavelength in the region of 0.4 pm to 16 μm. The method includes the steps of (a) Producing ultra-fine powder of CaLa.sub.2S.sub.4 via SPLTS process, (b) followed by pretreatment of the ultra-fine powder under inert and reducing gas conditions including H.sub.2 or Argon or N.sub.2 or H.sub.2/H.sub.2S, H.sub.2S, and mixtures there of (c) followed by sieving the powder in 140 mesh screen and cold pressing the powder at 7000 psi for 7 min. into a disk shaped green body (d) then Cold-Isostatic Pressing (CIP) at 40,000 psi for 5 min in a rubber mold (e) finally sintered article of CaLa.sub.2S.sub.4 disk of 25.4 mm diameter with ultra-high density containing cubic phase of CaLa.sub.2S.sub.4 to yield IR transmission of a peak value of 57% within the IR wavelength range of 2 μm to 16 μm, either by using microwave sintering followed by hot isostatic press or spark plasma sintering followed by hot isostatic press or vacuum sintering at (3×10.sup.−6 torr) followed by hot isostatic press or hot press sintering followed by hot isostatic press and finally followed by mirror polished IR article, is obtained.

A quantum dot light-emitting diode and a method for fabricating the same. The quantum dot light-emitting diode, includes: an anode, a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode. A composite electron transport layer is arranged between the cathode and the quantum dot light-emitting layer, and the composite electron transport layer contains an electron transport material and an ultraviolet absorbing material.

A quantum dot has a fluorescent crystalline nanoparticle, wherein the quantum dot has a core-shell structure including a core particle containing a first metal element and a shell layer containing a second metal element, at an interface between the core particle and the shell layer, a third metal element different from the first metal element and the second metal element is present, and an amount of the third metal element with respect to an amount of the first metal element contained in the core particle is 10% or less in terms of molar ratio. As a result the quantum dot has excellent controllability of the emission wavelength and high luminous properties and luminous efficiency.

The electroluminescent element includes a QD layer and an electron transport layers. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The QD layer contains a surface modifier that protects surfaces of the quantum dots, and a weight ratio of the surface modifier to the QD phosphor particles is 0.115 and more and 0.207 or less.

The electroluminescent element includes a QD layer and an electron transport layers. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The QD layer contains a surface modifier that protects surfaces of the quantum dots, and a weight ratio of the surface modifier to the QD phosphor particles is 0.115 and more and 0.207 or less.