A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.

A solid electrolyte including a compound represented by Formula 1 or 3, the compound having a glass transition temperature of −30° C. or less, and a glass or glass-ceramic structure,
AQX—Ga.sub.1−zM.sub.z1(F.sub.1−kCl.sub.k).sub.3−3zZ.sub.3z1  Formula 1
wherein, in Formula 1, Q is Li or a combination of Li and Na, K, or a combination thereof, M is a trivalent cation, or a combination thereof, X is a halogen other than F, pseudohalogen, OH, or a combination thereof, Z is a monovalent anion, or a combination thereof, 1<A<5, 0≤z≤1, 0≤z1≤1, and 0≤k<1,
AQX-aM.sub.z1Z.sub.3z1-bGa.sub.1−z(F.sub.1−kCl.sub.k).sub.3−3z  Formula 3 wherein, in Formula 3, Q is Li or a combination of Li and Na, K, or a combination thereof; M is a trivalent cation, or a combination thereof, X is a halogen other than F, pseudohalogen, OH, or a combination thereof, Z is a monovalent anion, or a combination thereof, 0<a≤1, 0<b≤1, 0<a+b, a+b=4−A, 1<A<5, 0≤z<1, 0≤z1≤1, and 0≤k<1.

A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In—Ga—Zn oxide, thereby separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like In—Ga—Zn oxide is irregularly deposited over a substrate while the crystallinity is maintained.

A highly reliable semiconductor device includes a first insulator, a second insulator, a first conductor, a third insulator, an oxide semiconductor, second and third conductors, a fourth insulator, a fourth conductor overlapping with a region between the second and third conductors, a fifth insulator, and a sixth insulator in this order. The fourth insulator is in contact with top and side surfaces of the oxide semiconductor, and a top surface of the third insulator. The fifth insulator is in contact with the side surface of the oxide semiconductor and the top surface of the third insulator so as to cover the oxide semiconductor, the second to fourth conductors, and the fourth insulator. The first, second, fifth, and sixth insulators have low permeability for hydrogen, water, and oxygen. The first and sixth insulators have a thinner thickness than the second and sixth insulators, respectively.

Na-rich electrolyte compositions provided herein can be used in a variety of devices, such as sodium ionic batteries, capacitors and other electrochemical devices. Na-rich electrolyte compositions provided herein can have a chemical formula of Na.sub.3OX, Na.sub.3SX, Na .sub.(3-δ) M.sub.δ/2OX and Na .sub.(3-δ) M.sub.δ/2SX wherein 0<δ<0.8, wherein X is a monovalent anion selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sub.2.sup.− and mixtures thereof, and wherein M is a divalent metal selected from the group consisting of magnesium, calcium, barium, strontium and mixtures thereof. Na-rich electrolyte compositions provided herein can have a chemical formula of Na .sub.(3-δ) M.sub.δ/3OX and/or Na .sub.(3-δ) M.sub.δ/3SX; wherein 0<δ<0.5, wherein M is a trivalent cation M.sup.3, and wherein X is selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sup.2− and mixtures thereof. Synthesis and processing methods of NaRAP compositions for battery, capacitor, and other electrochemical applications are also provided.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC.sub.2O.sub.5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000<x≦0.281, 0.625≦y<1.000, and 0.000<z≦0.375.

The present specification relates to composite metal oxide particles manufactured by reacting two or more metal oxides and a method for manufacturing the same.

A fluorescent material has a composition represented by (Gd.sub.1−α−β−γR.sub.αCe.sub.βTb.sub.γ).sub.3+a(Al.sub.1−u−vGa.sub.uSc.sub.v).sub.5−bO.sub.12, wherein: R is at least one of Y and Lu; a, b, α, β, γ, u and v satisfy ranges below: 0≦a≦0.1, 0≦b≦0.1, 0≦α≦0.8, 0.0003≦β≦0.005, 0.02≦γ≦0.2, 0.27≦u≦0.75, and 0≦v≦0.02; a relative density is 99% or more; and an effective atomic number is 35 or more and 60 or less.

The present specification relates to an electrolyte membrane, a fuel cell including the same, a battery module including the fuel cell, and a method for manufacturing the electrolyte membrane.