A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

Disclosed is a process for coating onto a substrate, including preparing a precursor having a general formula Q.sub.m/nMO.sub.xF.sub.y by a reaction M(OH).sub.x+yHF+m/nQ(OH).sub.n.fwdarw.Q.sup.n+.sub.m/n(MO.sub.xF.sub.y).sup.m−, wherein Q is an onium ion, selected from quaternary alkyl ammonium, quaternary alkyl phosphonium and trialkylsulfonium; M is a metal capable of forming an oxofluorometallate, where M may further comprise one or more additional metal, metalloid, and one or more of phosphorus (P), sulfur (S) and selenium (Se), iodine (I), and arsenic (As) or a combination thereof, and x>0, y>0, m≥1, n≥1; combining the precursor with a lithium ion source and with the substrate, and mixing to form a coating composition comprising a lithium oxofluorometallate having a general formula Li.sub.mMO.sub.xF.sub.y on the substrate. Further disclosed is a core-shell electrode active material including a core capable of intercalating and deintercalating lithium coated with the lithium oxofluorometallate having the general formula Li.sub.mMO.sub.xF.sub.y.

To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgIn.sub.xGa.sub.1-xS.sub.ySe.sub.1-y or ZnAgIn.sub.xGa.sub.1-xS.sub.ySe.sub.1-y (where 0≤x<1 and 0≤y≤1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M.sup.1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M.sup.1, an element M.sup.2, optionally an element M.sup.3, and an element Z, and have an average particle size of 50 nm or less. The element M.sup.1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M.sup.2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M.sup.3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Provided is a solid electrolyte material represented by a composition formula Li.sub.3−3δY.sub.1+δ−aM.sub.aCl.sub.6−x−yBr.sub.xI.sub.y, where M is at least one element selected from the group consisting of Al, Sc, Ga, and Bi; −1<δ<1; 0<a<2; 0<(1+δ−a); 0≤x≤6; 0≤y≤6; and (x+y)≤6.

A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement.

(In.sub.xGa.sub.yAl.sub.z).sub.2O.sub.3  (2)

In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.

31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In.sub.1+δGa.sub.1−δO.sub.3(ZnO).sub.m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by In.sub.xGa.sub.yO.sub.3(ZnO).sub.m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

The invention relates to a solid ionic conductor for a rechargeable non-aqueous electrochemical battery cell having the stoichiometric formula K(ASXX′).sub.p×q SO.sub.2, where K represents a cation from the group of the alkali metals with p=1, of the alkaline-earth metals with p=2 or of the zinc group with p=2, A represents an element from the third main group, S represents sulfur, selenium or tellurium, X and X′ represent a halogen, and the numerical value q is greater than 0 and less than or equal to 100.