A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

A color filter including a first pixel (or color conversion region) that is configured to emit a first light and a display device including the color filter. The first pixel includes a (first) quantum dot composite (or a color conversion layer including the quantum dot composite), wherein the quantum dot composite may include a matrix and a plurality of quantum dots dispersed (e.g., randomly) in the matrix, wherein the plurality of the quantum dots exhibit a multi-modal distribution (e.g., a bimodal distribution) including a first peak particle size and a second peak particle size in a size analysis, wherein the second peak particle size is greater than the first peak particle size, and a difference between the first peak particle size and the second peak particle size is less than or equal to about 5 nanometers (nm) (e.g., less than or equal to about 4.5 nm).

Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A.sup.1, and A.sup.2; and a shell covering the core. A.sup.1 is a Group V element, A.sup.2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A.sup.2, and includes indium and A.sup.1, and the second region includes indium, A.sup.1, and A.sup.2, and indium and A.sup.2 are alloyed with each other in the second region.

Proposed are a layered compound having indium and arsenic, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Na.sub.1-xIn.sub.yAs.sub.z (0≤x<1.0, 0.8≤y≤1.2, 1.2≤z≤1.8).

A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

Provided are a device and a method for synthesis of a gallium-containing garnet-structured scintillator polycrystalline material. The synthesis device includes a polycrystalline material synthesis chamber (7) made of a thermal insulation material (1); a crucible (3) arranged at the center of the bottom of the polycrystalline material synthesis chamber; an induction coil (2) annularly arranged outside the polycrystalline material synthesis chamber at a position with a height corresponding to that of the crucible; an arc heating device (4) arranged on a central axis of the induction coil in the polycrystalline material synthesis chamber, so as to heat and melt raw materials at the center of the crucible by means of the high temperature generated by arc discharge; the induction coil is connected to a RF induction power supply.

Disclosed by the present disclosure are Group II-III-V-VI quantum dot, preparation method therefor and quantum dot optoelectronic device. The method for preparing Group II-III-V-VI quantum dots includes the following steps: S1, providing a first solution containing a Group III-V quantum dot cores, or providing a second solution containing a Group II-III-V quantum dot cores; S2, adding a second supplementary liquid to the first solution, or adding a first supplementary liquid to the second solution, and reacting to obtain a Group II-III-V-VI quantum dot cores; wherein, reacting a first mixture at a temperature of 40˜100° C., and then adding a precursor of a first Group VI element and reacting to obtain the first supplementary liquid; or reacting a second mixture at a temperature of 40˜100° C., and then adding a precursor of a first Group VI element and reacting to obtain the second supplementary liquid.

A solid electrolyte material for a lithium secondary battery, an electrode, and a battery, relating in particular to an additive material capable of improving rapid transmission of ions in lithium secondary battery electrodes, a preparation method therefor and application thereof, and a solid electrolyte material for a secondary battery, a preparation method therefor and application thereof, as well as an electrode, an electrolyte thin layer, and a preparation method therefor.

Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.