A luminophore may have the general formula A.sub.2EZ.sub.zX.sub.x:RE, where: A is selected from the group of the monovalent elements; E is selected from the group of the tetravalent, pentavalent, or hexavalent elements; Z is selected from the group of the divalent elements; X is selected from the group of the monovalent elements; RE is selected from activator elements; 2+e=2z+x, with the charge number e of the element E; and x+z=5 and z>0. A process is also disclosed that is directed to producing the luminophore and a corresponding radiation-emitting component.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.