A method for producing an LGPS-type solid electrolyte can be provided, the method includes preparing a homogeneous solution by mixing and reacting Li.sub.2S and P.sub.2S.sub.5 in an organic solution such that the molar ratio of Li.sub.2S/P.sub.2S.sub.5 is 1.0-1.85; a precipitation step for forming a precipitate by adding, to the homogeneous solution, at least one MS.sub.2 (M is selected from the group consisting of Ge, Si, and Sn) and Li.sub.2S and then mixing; obtaining a precursor by removing the organic solution from the precipitate; and obtaining the LGPS-type solid electrolyte by heating the precursor at 200-700 C.

A method of making a CsSnI.sub.3 perovskite thermoelectric (TE) material including mixing a fatty acid, a fatty amine, a C.sub.8-C.sub.30 hydrocarbon, and CsCO.sub.3 in a vessel to form a cesium mixture; heating the cesium mixture to a temperature of 400-450 K to form a heated mixture; dissolving SnI.sub.2 in an organophosphine to form a tin solution; mixing the tin solution and the heated mixture to form a reaction mixture; cooling the reaction mixture to form a precipitate comprising a CsSnI.sub.3 perovskite; enclosing the CsSnI.sub.3 perovskite in a chamber; pressurizing the chamber to a hydrostatic pressure of at least 0.1 GPa; and heating the chamber to a temperature of 300-1,000 K to form the CsSnI.sub.3 perovskite TE material having a ZT that is at least 0.1.

A perovskite material represented by Formula 1:

Li.sub.xA.sub.yM.sub.zO.sub.3-Formula 1 wherein in Formula 1, 0<x1, 0<y1, 0<x+y<1, 0<z1.5, 01, A is H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, or a combination thereof, and M is Ni, Pd, Pb, Fe, Ir, Co, Rh, Mn, Cr, Ru, Re, Sn, V, Ge, W, Zr, Mo, Hf, U, Nb, Th, Ta, Bi, Li, H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Mg, Al, Si, Sc, Zn, Ga, Ag, Cd, In, Sb, Pt, Au, or a combination thereof.

A LiSnOS compound, a manufacturing method therefor and use thereof as an electrolyte material of Li-ion batteries, and a LiSnOS hybrid electrolyte are provided. The LiSnOS compound of the present invention is laminated SnOS embedded with lithium ions. The LiSnOS compound is represented by the formula Li.sub.3x[Li.sub.xSn.sub.1x(O,S).sub.2], where x>0. The manufacturing method for a LiSnOS compound includes the following steps of: (S1000) providing a SnOS compound; (S2000) adding a lithium source into the SnOS compound to form a LiSnOS precursor; and (S3000) performing calcination on the LiSnOS precursor in a vulcanization condition.

Disclosed is a tin oxide containing antimony and at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth. The antimony and the at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth are preferably dissolved in a solid state in tin oxide. The ratio of the number of moles of the element A to the number of moles of antimony, i.e., [(the number of moles of the element A/the number of moles of antimony)], is preferably 0.1 to 10.

Process for synthesizing a material, the process including the steps consisting in: a) providing a plurality of powders including: at least one powder including lithium, at least one powder including, for more than 95.0% of its mass, a transition metal chosen from titanium, cobalt, manganese, nickel, niobium, tin, iron and mixtures thereof, and at least one powder including, for more than 95.0% of its mass, a chalcogen element chosen from sulfur, selenium, tellurium and mixtures thereof, b) preparing a particulate mixture by mixing all the powders of the plurality or by mixing one of the powders of the plurality with a milled material obtained by milling a particulate assembly formed by mixing at least two of the other powders of the plurality, and milling the particulate mixture to form the material.

A sulfide solid electrolyte material, a gas-phase synthesis method for materials thereof and an application thereof are disclosed. The gas-phase synthesis method comprises: weighing a Li source and an M source according to a defined ratio, the M source being an oxide or sulfide of at least one of group 4, 5, 6, 13, 14 and 15 elements from the third period to the sixth period in the periodic table of elements; mixing and placing the mixed raw materials into a furnace; adding an S source into a sulfur source gas generation device; using a carrier gas, and performing gas washing on the furnace for a certain duration at a set ventilation rate; heating the furnace to 200-800 C. at a set heating rate in an environment in which the gas containing the S source is introduced at the set ventilation rate, keeping warm for a set duration, and then cooling to room temperature; and removing a sulfide solid electrolyte from the furnace.

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a foordite structure and contains Nb and Sn elements, and its holes become charge carriers by the condition that Sn.sup.4+/(Sn.sup.2++Sn.sup.4+) which is a ratio of Sn.sup.4+ to a total amount of Sn in the composite oxide is 0.006Sn.sup.4+/(Sn.sup.2++Sn.sup.4+)0.013.

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn.sup.4+/(Sn.sup.2++Sn.sup.4+) which is a ratio of Sn.sup.4+ to a total amount of Sn in the composite oxide is 0.124Sn.sup.4+/(Sn.sup.2++Sn.sup.4+)0.148.

The present invention provides a light valve containing ABX.sub.3 perovskite particles; more specifically is related to a light valve containing halide ABX.sub.3 perovskite particles that can control light transmittance. The preferable halide ABX.sub.3 perovskite particles in this invention consist of A being at least one of Cs.sup.+, CH3NH3.sup.+, and Rb.sup.+, B being at least one of Pb.sup.2+, Ge.sup.2+, and Sn.sup.2+, and X being at least one of Cl.sup., Br.sup., and I.sup.. This kind of halide ABX.sub.3 perovskite particles were suspended in a liquid suspension to make a light valve with a light transmittance control, which discloses a completely new application for ABX.sub.3 perovskite materials.