A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.

In one embodiment of the present invention, provided are a method for producing indium tin oxide particles, including a step of obtaining a precursor solution including indium and tin by heating an indium carboxylate having 1 to 3 carbon atoms and a tin carboxylate having 1 to 3 carbon atoms in a solvent including a carboxylic acid having 6 to 20 carbon atoms, and a step of obtaining a reaction solution including indium tin oxide particles by adding dropwise the obtained precursor solution to a heated solvent including oleyl alcohol and linear alcohol having 14 to 18 carbon atoms, in which, in the solvent, a concentration A of the linear alcohol having 14 to 18 carbon atoms with respect to all solvents, in units of % by mass, and a concentration B of the oleyl alcohol with respect to all solvents, in units of % by mass, satisfy the expression 1; and a method for producing a curable composition.

A/(A+B)>0.062:  Expression 1

In one embodiment of the present invention, provided are a method for producing indium tin oxide particles, including a step of obtaining a precursor solution including indium and tin by heating an indium carboxylate having 1 to 3 carbon atoms and a tin carboxylate having 1 to 3 carbon atoms in a solvent including a carboxylic acid having 6 to 20 carbon atoms, and a step of obtaining a reaction solution including indium tin oxide particles by adding dropwise the obtained precursor solution to a heated solvent including oleyl alcohol and linear alcohol having 14 to 18 carbon atoms, in which, in the solvent, a concentration A of the linear alcohol having 14 to 18 carbon atoms with respect to all solvents, in units of % by mass, and a concentration B of the oleyl alcohol with respect to all solvents, in units of % by mass, satisfy the expression 1; and a method for producing a curable composition.

A/(A+B)>0.062:  Expression 1

The present invention relates to a composite having the ability to stably and reliably detect a target gas even in a moist environment. The composite of the present invention includes: a nanostructure of an oxide semiconductor selected from the group consisting of SnO.sub.2, ZnO, WO.sub.3, NiO, and In.sub.2O.sub.3; and a CeO.sub.2 additive loaded on the nanostructure. The oxide semiconductor nanostructure is uniformly loaded with CeO.sub.2. The composite of the present invention can rapidly detect an analyte gas with high gas response irrespective of the presence and concentration of moisture. The present invention also relates to methods for preparing the composite, a gas sensor including the composite as a material for a gas sensing layer, and a method for fabricating the gas sensor.

The present invention relates to a composite having the ability to stably and reliably detect a target gas even in a moist environment. The composite of the present invention includes: a nanostructure of an oxide semiconductor selected from the group consisting of SnO.sub.2, ZnO, WO.sub.3, NiO, and In.sub.2O.sub.3; and a CeO.sub.2 additive loaded on the nanostructure. The oxide semiconductor nanostructure is uniformly loaded with CeO.sub.2. The composite of the present invention can rapidly detect an analyte gas with high gas response irrespective of the presence and concentration of moisture. The present invention also relates to methods for preparing the composite, a gas sensor including the composite as a material for a gas sensing layer, and a method for fabricating the gas sensor.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO.sub.3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO.sub.3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

Provided herein are high performance compounds, compositions, and composite materials of sodium (Na), tin (Sn), and oxygen (O). Electrodes and batteries incorporating the compounds, compositions, and composite materials are disclosed. Methods of manufacturing the compounds, compositions, and composite materials are also disclosed.

Provided herein are high performance compounds, compositions, and composite materials of sodium (Na), tin (Sn), and oxygen (O). Electrodes and batteries incorporating the compounds, compositions, and composite materials are disclosed. Methods of manufacturing the compounds, compositions, and composite materials are also disclosed.

Provided is a stannous oxide powder that can be suitably used for supplying tin ions, and has improved solubility and at the same time has an improved handling property. A stannous oxide powder comprising stannous oxide and inevitable impurities, wherein a content of stannous oxide in a dry mass is 99.9% by mass or more; a specific surface area is from 0.1 to 1.0 m.sup.2/g; a TAP density is from 2 to 4 g/cm; a 50% particle diameter is from 30 to 60 μm; and an angle of repose is from 10 to 33°.