The disclosure discloses a method for recycling lead paste in a spent lead-acid battery, comprising: (1) pretreating lead paste in a spent lead-acid battery as a raw material under vacuum; mixing the pretreated lead paste with a chlorination reagent to obtain reactants; and heating the reactants under vacuum to carry out a chlorination volatilization reaction, so that lead element in the pretreated lead paste is combined with chlorine element in the chlorination reagent to form lead chloride, which is then volatilized, and after the reaction is completed, chlorination residue and a crude lead chloride product are obtained by condensation and crystallization after volatilization; (2) purifying the crude lead chloride product obtained in the step (1) under vacuum to obtain a refined lead chloride product. The disclosure improves the overall process flow of the recycling method as well as parameter conditions of the respective steps thereof, and can effectively solve the problem of serious pollution in lead paste recycling in the prior art.

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for an organic and inorganic hybrid perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising organic and inorganic perovskite nanoparticles including an organic and inorganic perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein an organic and inorganic hybrid perovskite having a crystalline structure in which FCC and BCC are combined; forms a lamella structure in which an organic plane and an inorganic plane are alternatively stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for an organic and inorganic hybrid perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising organic and inorganic perovskite nanoparticles including an organic and inorganic perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein an organic and inorganic hybrid perovskite having a crystalline structure in which FCC and BCC are combined; forms a lamella structure in which an organic plane and an inorganic plane are alternatively stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A].sub.a[M].sub.b[X].sub.c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.

The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A].sub.a[M].sub.b[X].sub.c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.

The present disclosure relates to a perovskite sheet that includes two outer layers, each including AX; and a first layer that includes BX.sub.2, where B is a first cation, A is a second cation, X is a first anion, X is a second anion, and the first BX.sub.2 layer is positioned between the two outer layers.

The present disclosure relates to a perovskite sheet that includes two outer layers, each including AX; and a first layer that includes BX.sub.2, where B is a first cation, A is a second cation, X is a first anion, X is a second anion, and the first BX.sub.2 layer is positioned between the two outer layers.

This invention is related to a method for the preparation of halide perovskite or perovskite-related materials on a substrate and to optoelectronic devices and photovoltaic cells comprising the perovskites prepared by the methods of this invention The method for the preparation of the perovskite includes a direct conversion of elemental metal or metal alloy to halide perovskite or perovskite-related materials.

This invention is related to a method for the preparation of halide perovskite or perovskite-related materials on a substrate and to optoelectronic devices and photovoltaic cells comprising the perovskites prepared by the methods of this invention The method for the preparation of the perovskite includes a direct conversion of elemental metal or metal alloy to halide perovskite or perovskite-related materials.

A solvent-free and ligand-free ball milling method for preparation of cesium lead tribromide (CsPbBr.sub.3) quantum dot is provided. First, mixing a Cs source, a Pb source, and a Br source as per a molar ratio of Cs source:Pb source:Br source is 1:1?6:1?9, and then adding polymethyl methacrylate (PMMA) to obtain a mixture. The mixture is milled for 1-2 hours at a rotation speed in a range of 360?630 revolutions per minute (r/min) in a ball milling device, obtaining CsPbBr.sub.3 quantum dot. The method has advantages such as simple process, easy industrial production, no solvent, no organic ligand, low cost, and environmental protection. A quantum yield of product obtained by the method is up to 78%, and the product has a strong environmental stability. A preparation temperature of the product is low, and the reaction can be completed at a room temperature without a high temperature treatment.