A mixed conductor represented by Formula 1:

A.sub.xTi.sub.5yG.sub.zO.sub.12Formula 1 wherein, in Formula 1, A is a monovalent cation, G is at least one of a monovalent cation, a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, or a hexavalent cation, with the proviso that G is not Ti or Cr, wherein 0<x<2, 0.3<y<5, 0<z<5, and 0<3.

An ion conductor including: at least one oxide represented by Formulae 1 to 3
Li.sub.4xM.sub.1xM.sub.xO.sub.4 Formula 1
wherein in Formula 1, 0x1 and 0x1 , M is a Group 4 element, M is an element of Group 2, an element of Group 3, an element of Group 5, an element of Group 12, an element of Group 13, a vacancy, or a combination thereof, with the proviso that when M is Zr, then x0, x0 and M is Be, Ca, Sr, Ba, Ra, Cd, Hg, Cn, Ga, In, TI, an element of Group 3, an element of Group 5, or a combination thereof;
Li.sub.4yMO.sub.4yA.sub.y Formula 2
wherein in Formula 2, M is a Group 4 element, A includes at least one halogen, with the proviso that when M is Zr, y0,
Li.sub.4+4zM.sub.1zO.sub.4 Formula 3
wherein in Formula 3, 0<z<1, and M is a Group 4 element.

A compound of Formula 1:

Li.sub.6+(4a)x+c)M.sup.4+.sub.(2x)A.sup.a+.sub.xO.sub.(7c)N.sub.c (1)

wherein M is a tetravalent cationic element, A is a divalent or trivalent cationic element, N is an anion having a valence of less than 2, wherein when A is Y.sup.3+, In.sup.3+, Zn.sup.2+, or a combination thereof, 0.15<x0.5, otherwise 0x0.5, 0c2, and ((4a)x+c)>0.

An oxide superconducting wire includes a superconducting layer formed disposed on a substrate. The superconducting layer includes a structure in which artificial pin rods having different lengths dispersed on a plane parallel to a substrate surface of the substrate. A degree of dispersion in length of the artificial pin rods in the plane parallel to the substrate surface is greater than or equal to 5 mm.

To provide a structural body having a new shape and including a garnet crystal structure. A structural body comprising Li.sub.aM.sup.1.sub.bM.sup.2.sub.cO.sub.d (5a8; 2.5b3.5; 1.5c2.5; 10d14; M.sup.1 is at least one element selected from Al, Y, La, Pr, Nd, Sm, Lu, Mg, Ca, Sr, or Ba; and M.sup.2 is at least one element selected from Zr, Hf, Nb, or Ta) including a garnet crystal structure, wherein in a scanning electron microscopic image obtained through observation of a fracture surface in a depth direction of the structural body, a striped pattern extending along the depth direction is shown, and/or in a scanning electron microscopic image obtained through observation of a cut surface in the depth direction of the structural body, a continuous body extending along the depth direction is shown.

A passive temperature-sensing apparatus, which includes a capacitive sensing element that includes a capacitive sensing composition that includes a ferroelectric ceramic material that exhibits a measurable electrical Curie temperature that is below 30 degrees C. The capacitive sensing composition exhibits a negative slope of capacitance versus temperature over the temperature range of from 30 degrees C. to 150 degrees C.

The present invention relates to a method for producing a hexafluoromanganate(IV), said method being characterized by comprising: inserting an anode and a cathode into a reaction solution that contains a compound containing manganese having an atomic valence of less than 4 and/or manganese having an atomic valence of more than 4 and hydrogen fluoride; and then applying an electric current having an electric current density of 100 to 1000 A/m.sup.2 between the anode and the cathode. According to the present invention, it becomes possible to produce a hexafluoromanganate(IV) in which the content ratio of manganese having an atomic valence of 4 is high and the contamination with oxygen is reduced and which has high purity. When a complex fluoride red phosphor is produced using the hexafluoromanganate(IV) as a raw material, the phosphor produced has high luminescence properties, particularly high internal quantum efficiency.

A perovskite material represented by Formula 1:
Li.sub.xA.sub.yM.sub.zO.sub.3-?Formula 1 wherein in Formula 1, 0<x?1, 0<y?1, 0<x+y<1, 0<z?1.5, 0???1, A is H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, or a combination thereof, and M is Ni, Pd, Pb, Fe, Ir, Co, Rh, Mn, Cr, Ru, Re, Sn, V, Ge, W, Zr, Mo, Hf, U, Nb, Th, Ta, Bi, Li, H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Mg, Al, Si, Sc, Zn, Ga, Ag, Cd, In, Sb, Pt, Au, or a combination thereof.

Provided is a method for producing a phosphor having a chemical composition represented by formula (I), A.sub.2MF.sub.6:Mn (I) (A is one type or more of an alkali metal selected from Li, Na, K, Rb, and Cs, and includes at least Na and/or K, and M is one type or more of a tetravalent element selected from Si, Ti, Zr, Hf, Ge, and Sn.), the method comprising preparing a first hydrofluoric acid solution containing M and a second hydrofluoric acid solution containing A as well as either dissolving a compound containing Mn in either the first hydrofluoric acid solution or the second hydrofluoric acid solution or preparing a separate solution in which the compound containing Mn is dissolved. When the solutions are mixed to precipitate the phosphor of the formula (I), the solutions are mixed so that the concentration of M is 0.1 to 0.5 mol/liter when all the solutions are mixed. According to the present invention, a complex fluoride phosphor having excellent luminescence properties can be produced stably with high yield.

Provided, as a transparent magneto-optical material which does not absorb fiber laser light within a wavelength range of 0.9-1.1 m and is thus suitable for constituting a magneto-optical device such as an optical isolator wherein the formation of a thermal lens is suppressed, is a magneto-optical material which is composed of a transparent ceramic that contains a complex oxide represented by formula (1) as a main component, or which is composed of a single crystal of a complex oxide represented by formula (1).
Tb.sub.2xR.sub.2(2-x)O.sub.8-x(1)
(In the formula, 0.800<x<1.00, and R represents at least one element selected from the group consisting of silicon, germanium, titanium, tantalum tin, hafnium and zirconium (excluding the cases where R represents only silicon, germanium or tantalum)).