Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Various methods and systems are provided for facilitating the creation of a new and potentially thinner form of dielectric. Alternatively, for a given capacitance, a thicker layer can be created with lower risk of leakage. The present disclosure will enable the creation of physically smaller electronic components. Isotope-Modified Hafnium Dielectric is used to create a dielectric layer with a greater range of dielectric coefficients, which may enable the creation of smaller and/or more reliable electronic components.

A technique is described to deterministically tune the emission frequency of individual semiconductor photon sources, for example quantum dots. A focused laser is directed at a film of material that changes form when heated (for example, a phase change material that undergoes change between crystal and amorphous forms) overlaid on a photonic membrane that includes the photon sources. The laser causes a localized change in form in the film, resulting in a change in emission frequency of a photon source.

A technique is described to deterministically tune the emission frequency of individual semiconductor photon sources, for example quantum dots. A focused laser is directed at a film of material that changes form when heated (for example, a phase change material that undergoes change between crystal and amorphous forms) overlaid on a photonic membrane that includes the photon sources. The laser causes a localized change in form in the film, resulting in a change in emission frequency of a photon source.

A ceramic waveguide includes: a doped metal oxide ceramic core layer; and at least one cladding layer comprising the metal oxide surrounding the core layer, such that the core layer includes an erbium dopant and at least one rare earth metal dopant being: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, scandium, or oxides thereof, or at least one non-rare earth metal dopant comprising zirconium or oxides thereof. Also included is a quantum memory including: at least one doped polycrystalline ceramic optical device with the ceramic waveguide and a method of fabricating the ceramic waveguide.

The present invention is in the field of nanoparticles, their preparation and their use as pinning centers in superconductors. In particular the present invention relates to nanoparticles comprising an oxide of Sr, Ba, Y, La, Ti, Zr, Hf, Nb, or Ta, wherein the nanoparticles have a weight average diameter of 1 to 30 nm and wherein an organic compound of general formula (I), (II) or (III) or an organic compound containing at least two carboxylic acid groups on the surface of the nanoparticles (I) (II) (III) wherein a is 0 to 5, b and c are independent of each other 1 to 14, n is 1 to 5, f is 0 to 5, p and q are independent of each other 1 to 14, and e and f are independent of each other 0 to 12. ##STR00001##

The present invention is in the field of nanoparticles, their preparation and their use as pinning centers in superconductors. In particular the present invention relates to nanoparticles comprising an oxide of Sr, Ba, Y, La, Ti, Zr, Hf, Nb, or Ta, wherein the nanoparticles have a weight average diameter of 1 to 30 nm and wherein an organic compound of general formula (I), (II) or (III) or an organic compound containing at least two carboxylic acid groups on the surface of the nanoparticles (I) (II) (III) wherein a is 0 to 5, b and c are independent of each other 1 to 14, n is 1 to 5, f is 0 to 5, p and q are independent of each other 1 to 14, and e and f are independent of each other 0 to 12. ##STR00001##

The tris(trimethylsilyl)silanol (H-SST) ligand can be reacted with a Group 4 or 5 metal alkoxides in a solvent to form an SST-modified metal alkoxide precursor. Exemplary Group 4 precursors include [Ti(SST).sub.2(OR).sub.2] (OR=OPr.sup.i, OBu.sup.t, ONep); [Ti(SST).sub.3(OBu.sup.n)]; [Zr(SST).sub.2(OBu.sup.t).sub.2(py)]; [Zr(SST).sub.3(OR)] (OR=OBu.sup.t, ONep); [Hf(SST).sub.2(OBu.sup.t).sub.2]; and [Hf(SST).sub.2(ONep).sub.2(py).sub.n] (n=1, 2), where OPr.sup.i=OCH(CH.sub.3).sub.2, OBu.sup.t=OC(CH.sub.3).sub.3, OBu.sup.n=O(CH.sub.2).sub.3CH.sub.3, ONep=OCH.sub.2C(CH.sub.3).sub.3, and py=pyridine. Exemplary Group 5 precursors include [V(SST).sub.3(py).sub.2]; [Nb(SST).sub.3(OEt).sub.2]; [Nb(O)(SST).sub.3(py)]; 2[H][(Nb(-O).sub.2(SST)).sub.6(.sub.6-O)]; [Nb.sub.8O.sub.10(OEt).sub.18(SST).sub.2.Na.sub.2O]; [Ta(SST)(-OEt)(OEt).sub.3].sub.2; and [Ta(SST).sub.3(OEt).sub.2]; where OEt=OCH.sub.2CH.sub.3. When thermally processed, the precursors can form unusual core-shell nanoparticles. For example, HfO.sub.2/SiO.sub.2 core/shell nanoparticles have demonstrated resistance to damage in extreme irradiation and thermal environments.

The tris(trimethylsilyl)silanol (H-SST) ligand can be reacted with a Group 4 or 5 metal alkoxides in a solvent to form an SST-modified metal alkoxide precursor. Exemplary Group 4 precursors include [Ti(SST).sub.2(OR).sub.2] (OR=OPr.sup.i, OBu.sup.t, ONep); [Ti(SST).sub.3(OBu.sup.n)]; [Zr(SST).sub.2(OBu.sup.t).sub.2(py)]; [Zr(SST).sub.3(OR)] (OR=OBu.sup.t, ONep); [Hf(SST).sub.2(OBu.sup.t).sub.2]; and [Hf(SST).sub.2(ONep).sub.2(py).sub.n] (n=1, 2), where OPr.sup.i=OCH(CH.sub.3).sub.2, OBu.sup.t=OC(CH.sub.3).sub.3, OBu.sup.n=O(CH.sub.2).sub.3CH.sub.3, ONep=OCH.sub.2C(CH.sub.3).sub.3, and py=pyridine. Exemplary Group 5 precursors include [V(SST).sub.3(py).sub.2]; [Nb(SST).sub.3(OEt).sub.2]; [Nb(O)(SST).sub.3(py)]; 2[H][(Nb(-O).sub.2(SST)).sub.6(.sub.6-O)]; [Nb.sub.8O.sub.10(OEt).sub.18(SST).sub.2.Na.sub.2O]; [Ta(SST)(-OEt)(OEt).sub.3].sub.2; and [Ta(SST).sub.3(OEt).sub.2]; where OEt=OCH.sub.2CH.sub.3. When thermally processed, the precursors can form unusual core-shell nanoparticles. For example, HfO.sub.2/SiO.sub.2 core/shell nanoparticles have demonstrated resistance to damage in extreme irradiation and thermal environments.

A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.