A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Disclosed is a fluorescent plate in which a high reflectance of a reflective layer can be maintained over a long period of time, and occurrence of peeling of the reflective layer can be suppressed.

The fluorescent plate of the present invention includes a fluorescent material layer containing a fluorescent material, an oxide layer disposed below the fluorescent material layer, and a reflective layer which is disposed below the oxide layer and is formed of silver, and further includes an oxidation-preventive protective layer which is disposed between the oxide layer and the reflective layer and is formed of a translucent material, and a translucent adhesion layer interposed between the oxidation-preventive protective layer and the reflective layer.

Disclosed are a metal oxide thin film precursor represented by Chemical Formula 1, a method of fabricating a metal oxide thin film using the same, and a semiconductor device including the metal oxide thin film.

##STR00001##

The definition of Chemical Formula 1 is as described in the detailed description.

Disclosed are a metal oxide thin film precursor represented by Chemical Formula 1, a method of fabricating a metal oxide thin film using the same, and a semiconductor device including the metal oxide thin film.

##STR00001##

The definition of Chemical Formula 1 is as described in the detailed description.

Powder of particles, more than 95% by number of said particles exhibiting a circularity greater than or equal to 0.85, wherein said powder contains more than 99.8% of a rare earth oxide and/or of hafnium oxide and/or of yttrium aluminum oxide, as percentage by weight relative to the oxides, and has: a median particle size D 50 of between 10 and 40 microns and a size dispersion index (D 90D 10)/D 50 of less than 3; a percentage by number of particles having a size less than or equal to 5 m which is less than 5%; an apparent-density dispersion index (P<50P)/P of less than 0.2, the cumulative specific volume of the pores which have a radius of less than 1 m being less than 10% of the apparent volume of the powder, in which the percentiles Dn of the powder are the particle sizes corresponding to the percentages, by number, of n %, on the curve of cumulative distribution of the particle size of the powder, the particle sizes being classified in increasing order, the density P<50 being the apparent density of the fraction of particles having a size less than or equal to D50, and the density P being the apparent density of the powder.

Powder of particles, more than 95% by number of said particles exhibiting a circularity greater than or equal to 0.85, wherein said powder contains more than 99.8% of a rare earth oxide and/or of hafnium oxide and/or of yttrium aluminum oxide, as percentage by weight relative to the oxides, and has: a median particle size D 50 of between 10 and 40 microns and a size dispersion index (D 90D 10)/D 50 of less than 3; a percentage by number of particles having a size less than or equal to 5 m which is less than 5%; an apparent-density dispersion index (P<50P)/P of less than 0.2, the cumulative specific volume of the pores which have a radius of less than 1 m being less than 10% of the apparent volume of the powder, in which the percentiles Dn of the powder are the particle sizes corresponding to the percentages, by number, of n %, on the curve of cumulative distribution of the particle size of the powder, the particle sizes being classified in increasing order, the density P<50 being the apparent density of the fraction of particles having a size less than or equal to D50, and the density P being the apparent density of the powder.

A radiation-sensitive composition includes: particles including a metal oxide as a principal component; an aggregation inhibiting agent for inhibiting aggregation of the particles; and an organic solvent. The aggregation inhibiting agent is preferably a compound having dehydration ability. The compound having dehydration ability is preferably a carboxylic anhydride, an orthocarboxylic acid ester, a carboxylic acid halide or a combination thereof. As the aggregation inhibiting agent, a compound that is capable of coordinating to a metal atom is also preferred. The compound is preferably represented by formula (1). In the formula (1), R.sup.1 represents an organic group having a valency of n; X represents OH, COOH, NCO, NHR.sup.a, COOR.sup.A or COC(R.sup.L).sub.2COR.sup.A; and n is an integer of 1 to 4. The content of the aggregation inhibiting agent with respect to 100 parts by mass of the particles is preferably no less than 0.001 parts by mass.

R.sup.1X).sub.n(1)

The present invention relates to a method for preparing nano ZrO.sub.2/HfO.sub.2 and metal nanoparticles. Firstly, an initial alloy mainly composed of Zr/Hf and Al/Zn is prepared using metal raw materials; Dissolve the initial alloy in a hot alkaline solution to obtain an intermediate solution; Then reduce the alkaline concentration or (and) temperature of the intermediate solution to allow the solid flocculent products containing Zr/Hf to precipitate from the intermediate solution after the concentration or (and) temperature is reduced, resulting in low crystalline nano ZrO.sub.2/HfO.sub.2; By further heat treatment, crystalline nano ZrO.sub.2/HfO.sub.2 was obtained. When precious metal elements are dissolved in the initial alloy, this method can also be used to prepare metal nanoparticle doped nano ZrO.sub.2/HfO.sub.2; After removing the nano ZrO.sub.2/HfO.sub.2 from the composite product, metal nanoparticles were further prepared.