Methods for representing crystal structure of inorganic materials in matrix form, and for quantitative comparison of multiple inorganic materials, can be employed to identify candidate materials with high potential to possess a desired property. Such methods can include conversion of an atomic coordinate set to a coordinate set for an anion only lattice, anion substitution, and unit cell re-scaling. Such methods can further include simulation of x-ray diffraction data for modified anion-only lattices, and generation of n2 matrices from the simulated diffraction data. Quantitative structural similarity values can be derived from the n2 matrices. The quantitative structural similarity values can be useful for structural categorization, as well as prediction of functional properties.

A chalcogenide material and an electronic device are provided. The chalcogenide material may include 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic and 40-50 at % of selenium. The electronic device may include a semiconductor memory device, the semiconductor memory device including a first memory cell that includes a first switching element. The first switching element may include a chalcogenide material including 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic, and 40-50 at % of selenium.

A chalcogenide material and an electronic device are provided. The chalcogenide material may include 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may include a switching element including a chalcogenide material, the chalcogenide material including 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may further include a first electrode electrically coupled to the switching element and a second electrode electrically coupled to the switching element.

The present invention provides a solid-state electrolyte for solid-state rechargeable sodium-ions batteries comprising: Na in a molar content x of at least 3.50 and of at most 4.00, Sn in a molar content y of at least 0.50 and of at most 1.00, As in a molar content z superior to 0.00, preferably of at least 0.10, and of at most 0.50, S in a molar content of 4.00.

The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:
R.sub.aT.sub.bX.sub.2-nY.sub.n(1)
wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Methods for representing crystal structure of inorganic materials in matrix form, and for quantitative comparison of multiple inorganic materials, can be employed to identify candidate materials with high potential to possess a desired property. Such methods can include conversion of an atomic coordinate set to a coordinate set for an anion only lattice, anion substitution, and unit cell re-scaling. Such methods can further include simulation of x-ray diffraction data for modified anion-only lattices, and generation of n2 matrices from the simulated diffraction data. Quantitative structural similarity values can be derived from the n2 matrices. The quantitative structural similarity values can be useful for structural categorization, as well as prediction of functional properties.

We provide methods and apparatus for preparing crystalline-clad and crystalline core optical fibers with minimal or no breakage by minimizing the influence of thermal stress during a liquid phase epitaxy (LPE) process as well as the fiber with precisely controlled number of modes propagated in the crystalline cladding and crystalline core fiber via precisely controlling the diameter of crystalline fiber core with under-saturated LPE flux. The resulting crystalline cladding and crystalline core optical fibers are also reported.

Provided are compounds of the formula M.sup.A.sub.1-xM.sup.B.sub.xX.sup.A.sub.1-yX.sup.B.sub.yQ.sup.A.sub.1-zQ.sup.B.sub.z, wherein M.sup.A and M.sup.B are selected from Si, Ge, Sn, and Pb, X.sup.A and X.sup.B are selected from F, Cl, Br and I, Q.sup.A and Q.sup.B are selected from P, As, Sb and Bi, and x, y and z are 0 to 0.5, as well as doped variants thereof, useful as semiconducting materials. Due a double helix structure formed by the constituting atoms, the compounds are particularly suitable to provide nano-materials, in particular nanowires, for diverse applications.

An optical thin film includes a support layer and a dielectric layer on the support layer. The dielectric layer has a refractive index greater than that of the support layer. The dielectric layer includes a compound ADX, which includes a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than an atomic weight of A or D. The optical thin film may exhibit light transmission having a high refractive index and low absorptivity.