A stabilization process for an arsenic solution comprising thiosulfates, the process comprising: acidifying the arsenic solution to decompose the thiosulfates, to yield an acidified solution; oxidizing the acidified solution to oxidize residual As.sup.3+ to As.sup.5+ and reduced sulfur species to sulfates, to yield a slurry comprising elemental sulfur; separating elemental sulfur from the slurry to yield a liquid; oxidizing the liquid to oxidize residual reduced sulfur species, to yield an oxidized solution; and forming a stable arsenic compound from the oxidized solution.

A process for reducing the concentration of one or more arsenic-containing compounds in an aqueous solution comprising at least one fluoroacid, which process comprises: (i) contacting the aqueous solution with an oxidising agent to produce one or more Asv-containing compounds; and (ii) removal of precipitated arsenic-containing compounds; wherein the process comprises a step (iii) the addition of an aqueous alkali solution or slurry, which may take place after step (i) and before step (ii) or after step (ii).

A stabilization process for an arsenic solution comprising thiosulfates, the process comprising: acidifying the arsenic solution to decompose the thiosulfates, to yield an acidified solution; oxidizing the acidified solution to oxidize residual As.sup.3+ to As.sup.5+ and reduced sulfur species to sulfates, to yield a slurry comprising elemental sulfur; separating elemental sulfur from the slurry to yield a liquid; oxidizing the liquid to oxidize residual reduced sulfur species, to yield an oxidized solution; and forming a stable arsenic compound from the oxidized solution.

The disclosure provides relates to compositions and methods for water treatment. It also addresses a method for synthesizing TiO.sub.2 (and other metal oxides) with or without dopants. This method enables control over size, phase, morphology and porosity and specific surface area of these materials. The disclosure also provides metal oxide composites that can be used in photocatalysts, photovoltaics, and solar hydrogen applications.

A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed. The method includes heating a first mixture including nanocrystal seeds comprising indium arsenide with an absorbance in a range from about 700 to 800 nm and a liquid medium in a reaction vessel to a first temperature; and combining the nanocrystals seeds comprising indium arsenide with an indium-source mixture and an arsenic-source mixture under conditions suitable to increase the size of the seeds to form the semiconductor nanocrystals comprising indium arsenide, wherein the indium-source mixture includes an indium precursor, a coordinating solvent, and a carboxylic acid; and the arsenic-source mixture includes a liquid medium and an arsenic precursor represented by the formula As(Y(R).sub.3).sub.3, where Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, alkyl, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, thioalkyl, alkenyl, alkynyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl. Semiconductor nanocrystals are also disclosed.

A stabilization process for an arsenic solution comprising thiosulfates, the process comprising: acidifying the arsenic solution to decompose the thiosulfates, to yield an acidified solution; oxidizing the acidified solution to oxidize residual As.sup.3+ to As.sup.5+ and reduced sulfur species to sulfates, to yield a slurry comprising elemental sulfur; separating elemental sulfur from the slurry to yield a liquid; oxidizing the liquid to oxidize residual reduced sulfur species, to yield an oxidized solution; and forming a stable arsenic compound from the oxidized solution.

A process is provided for separation of at least one metal sulfide from a mixed sulfide concentrate. The process includes: subjecting the mixed sulfide concentrate to flotation in which at least one sulfide including antimony, arsenic and a first metal is floated and at least one sulfide including a second metal is depressed. The flotation yields a first metal concentrate having the at least one sulfide including antimony, arsenic and the first metal and a second metal concentrate having the at least one sulfide including the second metal. The first metal concentrate is leached to yield a further concentrate and a leach solution. The further concentrate includes the first metal and the leach solution includes soluble antimony and soluble arsenic. The process further includes oxidizing the leach solution to yield an antimony precipitate and an arsenic solution, and forming a stable arsenic compound from the arsenic solution.

The disclosure provides relates to compositions and methods for water treatment. It also addresses a method for synthesizing TiO.sub.2 (and other metal oxides) with or without dopants. This method enables control over size, phase, morphology and porosity and specific surface area of these materials. The disclosure also provides metal oxide composites that can be used in photocatalysts, photovoltaics, and solar hydrogen applications.

The disclosure provides relates to compositions and methods for water treatment. It also addresses a method for synthesizing TiO.sub.2 (and other metal oxides) with or without dopants. This method enables control over size, phase, morphology and porosity and specific surface area of these materials. The disclosure also provides metal oxide composites that can be used in photocatalysts, photovoltaics, and solar hydrogen applications.

The disclosure provides relates to compositions and methods for water treatment. It also addresses a method for synthesizing TiO.sub.2 (and other metal oxides) with or without dopants. This method enables control over size, phase, morphology and porosity and specific surface area of these materials. The disclosure also provides metal oxide composites that can be used in photocatalysts, photovoltaics, and solar hydrogen applications.