The present invention involves pigments derived from compounds with the LiSbO.sub.3-type or LiNbO.sub.3-type structures. These compounds possess the following formulations M.sup.1M.sup.5Z.sub.3, M.sup.1M.sup.2M.sup.4M.sup.5Z.sub.6, M.sup.1M.sup.3.sub.2M.sup.5Z.sub.6, M.sup.1M.sup.2M.sup.3M.sup.6Z.sub.6, M.sup.1.sub.2M.sup.4M.sup.6Z.sub.6, M.sup.1M.sup.5M.sup.6Z.sub.6, or a combination thereof. The cation M.sup.1 represents an element with a valence of +1 or a mixture thereof, the cation M.sup.2 represents an element with a valence of +2 or a mixture thereof, the cation M.sup.3 represents an element with a valence of +3 or a mixture thereof, the cation M.sup.4 represents an element with a valence of +4 or a mixture thereof, the cation M.sup.5 represents an element with a valence of +5 or a mixture thereof, and the cation M.sup.6 represents an element with a valence of +6 or a mixture thereof. The cation M is selected from H, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Ag, Zn, B, Al, Ga, In, Si, Ge, Sn, P, Sb, or Te. The anion Z is selected from N, O, S, Se, Cl, F, hydroxide ion or a mixture thereof. Along with the elements mentioned above vacancies may also reside on the M or Z sites of the above formulations such that the structural type is retained. The above formula may also include M dopant additions below 20 atomic %, where the dopant is selected from H, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Ag, Zn, B, Al, Ga, In, Si, Ge, Sn, P, Sb, Bi, Te, or mixtures thereof.

A method of producing perovskite nanocrystalline particles using a liquid crystal includes a first operation for preparing a mixed solution including a first precursor compound, a second precursor compound, and a first solvent. a second operation for preparing a precursor solution by adding an organic ligand to the prepared mixed solution, a third operation for performing crystallization treatment after adding the prepared precursor solution to a reactor containing a liquid crystal, and a fourth operation for separating the perovskite nanocrystalline particles from the crystallized solution through a centrifugal separator.

Amorphous metal chalcogenides having the formula A.sub.2xSn.sub.xSb.sub.3-xQ.sub.6 are provided. In the chalcogenides, A is an alkali metal element, such as K or Cs, and Q is S or Se. The value of x can be in the range from 0.8 to 1. Porous chalcogenide materials made from the amorphous chalcogenides are also provided. These porous materials comprise metal chalcogenides having the formula (AB).sub.2xSn.sub.xSb.sub.3-xQ.sub.6, wherein x is in the range from 0.8 to 1, A and B are two different alkali metal elements, and Q is S or Se.

The present invention involves pigments derived from compounds with the LiSbO.sub.3-type or LiNbO.sub.3-type structures. These compounds possess the following formulations M.sup.1M.sup.5Z.sub.3, M.sup.1M.sup.2M.sup.4M.sup.5Z.sub.6, M.sup.1M.sup.3.sub.2M.sup.5Z.sub.6, M.sup.1M.sup.2M.sup.3M.sup.6Z.sub.6, M.sup.1.sub.2M.sup.4M.sup.6Z.sub.6, M.sup.1M.sup.5M.sup.6Z.sub.6, or a combination thereof. The cation M.sup.1 represents an element with a valence of +1 or a mixture thereof, the cation M.sup.2 represents an element with a valence of +2 or a mixture thereof, the cation M.sup.3 represents an element with a valence of +3 or a mixture thereof, the cation M.sup.4 represents an element with a valence of +4 or a mixture thereof, the cation M.sup.5 represents an element with a valence of +5 or a mixture thereof, and the cation M.sup.6 represents an element with a valence of +6 or a mixture thereof. The cation M is selected from H, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Ag, Zn, B, Al, Ga, In, Si, Ge, Sn, P, Sb, or Te. The anion Z is selected from N, O, S, Se, Cl, F, hydroxide ion or a mixture thereof. Along with the elements mentioned above vacancies may also reside on the M or Z sites of the above formulations such that the structural type is retained. The above formula may also include M dopant additions below 20 atomic %, where the dopant is selected from H, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Ag, Zn, B, Al, Ga, In, Si, Ge, Sn, P, Sb, Bi, Te, or mixtures thereof.

The solid electrolyte according to an embodiment of the present disclosure is represented by the following formula (1):
Li.sub.7?yLa.sub.3(Zr.sub.2?x?yGe.sub.xM.sub.y)O.sub.12(1) wherein 0.00<x?0.40, 0.00<y?1.50, M is Sb or is Sb and an element of at least one of Nb and Ta.

Provided are a hole transport material composite including a lead-free perovskite (Cs.sub.2SnI.sub.6), a liquid ionic conductor and a solvent that is a solid at a room temperature, a solar cell, and a method of manufacturing the lead-free perovskite-based hole transport material composite.

ATO infrared absorbing fine particles having high coloring property (high light absorption property) which has both excellent dispersibility and solar radiation shielding properties and can reduce a use amount of ATO infrared ray absorbing fine particles can be provided, wherein crystal lattice constant a is 4.736 or more and 4.743 or less, crystal lattice constant c is 3.187 or more and 3.192 or less, and a crystallite size is 5.5 nm or more and 10.0 nm or less, which are analyzed by an X-ray diffraction measurement result.

Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed.

Provided are compounds of the formula M.sup.A.sub.1-xM.sup.B.sub.xX.sup.A.sub.1-yX.sup.B.sub.yQ.sup.A.sub.1-zQ.sup.B.sub.z, wherein M.sup.A and M.sup.B are selected from Si, Ge, Sn, and Pb, X.sup.A and X.sup.B are selected from F, Cl, Br and I, Q.sup.A and Q.sup.B are selected from P, As, Sb and Bi, and x, y and z are 0 to 0.5, as well as doped variants thereof, useful as semiconducting materials. Due a double helix structure formed by the constituting atoms, the compounds are particularly suitable to provide nano-materials, in particular nanowires, for diverse applications.

A composite exhibiting a thermoelectric effect is provided. The composite comprises a metal sulphosalt, an electrically conductive polymer, and fibres. A method of making a composite material is also provided, comprising mixing the components. The three components work together to provide a low-cost thermoelectric composite that utilises readily available materials. A friction material and a thermoelectric device comprising the composite of the invention are also discussed. Preferably a copper sulphosalt is used, such as tetrahedrite. Preferably man-made vitreous fibres and a binder are used.