Patent classifications
C01G33/006
DIELECTRIC MATERIAL, DEVICE COMPRISING DIELECTRIC MATERIAL, AND METHOD OF PREPARING DIELECTRIC MATERIAL
Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).
GROUP V ELEMENT-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF GROUP V ELEMENT-CONTAINING FILM
Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V-containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group V-containing film is deposited on the substrate using a vapor deposition process, wherein the Group V-containing film forming composition comprises a precursor having the formula:
##STR00001##
wherein M is a Group V (five) element selected from V, Nb, or Ta; R is H, Me, Et, nPr, iPr, nBu, sBu, iBu, tBu, n-pentyl, i-pentyl, neo-pentyl, or tert-amyl; each R.sup.1, R.sup.2, R.sup.3 is independently H, an alkyl group, or a —SiR′.sub.3 group, with each R′ independently being H or an alkyl group; and each R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15 is independently H, Me, Et, nPr, iPr, nBu, sBu, iBu, or tBu. Methods for deposition of a LiNbO.sub.3 film on a powder are disclosed.
Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate
[Object] It is an object of the present invention to provide a lithium tantalate single crystal substrate which undergoes only small warpage, is free from cracks and scratches, has better temperature non-dependence characteristics and a larger electromechanical coupling coefficient than a conventional Y-cut LiTaO.sub.3 substrate. [Means to solve the Problems] The lithium tantalate single crystal substrate of the present invention is a rotated Y-cut LiTaO.sub.3 single crystal substrate having a crystal orientation of 36° Y-49° Y cut characterized in that: the substrate is diffused with Li from its surface into its depth such that it has a Li concentration profile showing a difference in the Li concentration between the substrate surface and the depth of the substrate; and the substrate is treated with single polarization treatment so that the Li concentration is substantially uniform from the substrate surface to a depth which is equivalent to 5-15 times the wavelength of either a surface acoustic wave or a leaky surface acoustic wave propagating in the LiTaO.sub.3 substrate surface.
Method for forming a temperature compensated dielectric material
Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.
Lithium potassium element oxide compounds as Li super-ionic conductor, solid electrolyte and coating layer for lithium metal battery and lithium-ion battery
Solid-state lithium ion electrolytes of lithium potassium element oxide based compounds are provided which contain an anionic framework capable of conducting lithium ions. The element atoms are Ir, Sb, I Nb and W. An activation energy of the lithium potassium element oxide compounds is from 0.15 to 0.50 eV and conductivities are from 10.sup.−3 to 22 mS/cm at 300K. Compounds of specific formulae are provided and methods to alter the materials with inclusion of aliovalent ions shown. Lithium batteries containing the composite lithium ion electrolytes are also provided. Electrodes containing the lithium potassium element oxide based materials and batteries with such electrodes are also provided.
RADIOFREQUENCY COMPONENT INCORPORATING TEMPERATURE COMPENSATED DIELECTRIC MATERIAL
Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.
Solid-state electrolyte and all-solid-state battery
A solid-state electrolyte having a garnet-type crystal structure represented by the formula (Li.sub.7−ax+yA.sub.x)La.sub.3(Zr.sub.2−yB.sub.y)O.sub.12, where A is at least one element selected from Mg, Zn, Al, Ga, and Sc, a is a valence of A, B is at least one element selected from Al, Ga, Sc, Yb, Dy, and Y, x is more than 0 and less than 1.0, y is more than 0 and less than 1.0, and 7−ax+y is more than 5.5 and less than 7.0).
Electronic device comprising a dielectric material and methods for the manufacture thereof
An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1
Li.sub.24-b*y-c*z-a*xM.sup.1.sub.yM.sup.2.sub.zM.sup.3.sub.xO.sub.12-δ (1)
wherein M.sup.1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.
TERNARY PARAELECTRIC MATERIAL WITH SPACE GROUP CC AND METHOD OF MANUFACTURING THE SAME
A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A.sub.2B.sub.4O.sub.11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A.sub.2B.sub.4O.sub.11 material may be Na.sub.2Nb.sub.4O.sub.11 in which bandgap energy thereof is greater than that of STO. The A.sub.2B.sub.4O.sub.11 material may have relative density that is greater than 90% or more.
SOLID COMPOSITION AND METHOD FOR PRODUCING SOLID ELECTROLYTE
A solid composition according to the present disclosure is a solid composition for use in forming a solid electrolyte having a crystal phase, containing: at normal temperature and normal pressure, an oxide having a crystal phase different from the crystal phase of the solid electrolyte; a lithium compound; and an oxo acid compound. The oxo acid compound may contain at least one of a nitrate ion and a sulfate ion as an oxo anion.