A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb.sub.2O.sub.5 powder, a K.sub.2Co.sub.3 powder, and a Na.sub.2Co.sub.3 powder, pulverizing the mixed powder to achieve a grain size d.sub.50 of 100 m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900 C. or higher and less than 1150 C., and a load of 150 to 400 kgf/cm.sup.2. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

An oxide electrolyte sintered body with high lithium ion conductivity and a method for producing the same, which can obtain the oxide electrolyte sintered body with high lithium ion conductivity by sintering at lower temperature than ever before. The method for producing an oxide electrolyte sintered body may comprise the steps of: preparing crystal particles of a garnet-type ion-conducting oxide which comprises Li, H, at least one kind of element L selected from the group consisting of an alkaline-earth metal and a lanthanoid element, and at least one kind of element M selected from the group consisting of a transition element that can be 6-coordinated with oxygen and typical elements belonging to the Groups 12 to 15, and which is represented by a general formula (Li.sub.x3yz,E.sub.y,H.sub.z)L.sub.M.sub.O.sub. (where E is at least one kind of element selected from the group consisting of Al, Ga, Fe and Si, 3x3yz7, 0y<0.22, 0<z2.8, 2.53.5, 1.52.5, and 1113); preparing a lithium-containing flux; and sintering a mixture of the crystal particles of the garnet-type ion-conducting oxide and the flux by heating at 400 C. or more and 650 C. or less.

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS.sub.3, CsNbSe.sub.3, and CsNbO.sub.x-3Q.sub.x, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

A process for synthesizing a Mn.sup.4+ doped phosphor of formula I by electrolysis is presented. The process includes electrolyzing a reaction solution comprising a source of manganese, a source of M and a source of A. One aspect relates to a phosphor composition produced by the process. A lighting apparatus including the phosphor composition is also provided. A.sub.x[MF.sub.y]:Mn.sup.4+ (I) where, A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7.

A solid electrolyte material contains Li, M, and X. M is at least one selected from metallic elements, and X is at least one selected from the group consisting of Cl, Br, and I. A plurality of atoms of X form a sublattice having a closest packed structure. An average distance between two adjacent atoms of X among the plurality of atoms of X is 1.8% or more larger than a distance between two adjacent atoms of X in a rock-salt structure composed only of Li and X.

Provided is a precursor of transition metal oxide represented by chemical formula 1 below.
Ni.sub.aMn.sub.bCo.sub.1-(a+b+c+d)Zr.sub.cM.sub.d[OH.sub.(1-x)2-y]A.sub.(y/n)[Chemical formula 1]

Provided is a complex oxide that has a space group I-43d, has a high hydrogen content, contains almost no impurity phase, exhibits almost no aluminum substitution in the structure thereof, and is suitable for proton conductivity. This complex oxide is represented by a chemical formula Li.sub.7-x-yH.sub.xLa.sub.3Zr.sub.2-yM.sub.yO.sub.12 (M represents Ta and/or Nb, 3.2<x7y, and 0.25<y<2) and is a single phase of a garnet type structure belonging to a cubic system, and the crystal structure thereof is a space group I-43d.

A solid electrolyte material contains Li, Y, at least one selected from the group consisting of Mg, Ca, Sr, Ba, Zn, Sc, La, Sm, Bi, Zr, Hf, Nb, and Ta, and at least one selected from the group consisting of Cl, Br, and I. An X-ray diffraction pattern of the solid electrolyte material obtained by using Cu-K radiation as the X-ray source includes peaks within the range in which the diffraction angle 2 is 25 or more and 35 or less, and also includes at least one peak within the range in which the diffraction angle 2 is 43 or more and 51 or less.

A solid electrolyte material is represented by the following compositional formula (1):

Li.sub.3-3-2aY.sub.1+-aM.sub.aCl.sub.6-x-yBr.sub.xI.sub.y where, M is at least one selected from the group consisting of Ta and Nb; and 1<<1, 0<a<1.2, 0<(332a), 0<(1+a), 0x6, 0y6, and (x+y)6 are satisfied.