Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing:

a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:

A.sub.1+δ[(Zr.sub.xTi.sub.1−a).sub.1−aNb.sub.a]O.sub.y  Formula P

wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.

The present invention discloses a dielectric ceramic formula enabling one to obtain a multilayer ceramic capacitor by alternatively stacking the ceramic dielectric layers and base metal internal electrodes. The dielectric ceramic composition comprises a primary ingredient:

[(Na.sub.1-xK.sub.x).sub.sA.sub.1-s].sub.m[(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]O.sub.3

wherein:
A is at least one selected from the alkaline-earth element group of Mg, Ca, Sr, and Ba;
B1 is at least one selected from the group of Ti, Zr, Hf and Sn;
B2 is at least one selected from transition metal elements;
and wherein:
x, y, s, u, v, and w are molar fractions of respective elements, and m is the molar ratio of [(Na.sub.1-xK.sub.x).sub.sA.sub.1-s] and [(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]. They are in the following respective range:
0.93≤m≤1.07;
0.7≤s≤1.0;
0.00≤x≤0.05; 0.00≤y≤0.65;
0.7≤u≤1.0; 0.0≤v≤0.3; 0.001≤w≤0.100;
a first sub-component composes of at least one selected from the rare-earth compound,
wherein the rare-earth element is no more than 10 mol % parts with respect to the main component; and
a second sub-component composes a compound with low melting temperature to assist the ceramic sintering process, said frit, which is Li free and could be at least one selected from fluorides, silicates, borides, and oxides. The content of frit is within the range of 0.01 mol % to 15.00 mol % parts with respect to the main component.

Provided is a dielectric composition exhibiting a high strength and a high specific dielectric constant. The dielectric composition contains composite oxide particles having a composition formula represented by (Sr.sub.xBa.sub.1-x).sub.yNb.sub.2O.sub.5+y and an Al-based segregation phase. The Al segregation phase has niobium, aluminum, and oxygen.

According to one embodiment, an electrode is provided. The electrode includes an active material-containing layer. The active material-containing layer includes an active material and a conductive agent. The active material contains primary particles of a niobium-titanium composite oxide. The conductive agent contains fibrous carbon. The primary particles have an average particle size of 0.3 μm or more and 2 μm or less. At least a part of a surface of the primary particles is coated with the fibrous carbon. A covering ratio of the primary particles by the fibrous carbon is 0.01% or more and 40% or less.

A piezoelectric element 1 includes a first electrode 20, a second electrode 40, and a piezoelectric layer 30 provided between the first electrode 20 and the second electrode 40. The piezoelectric layer 30 is composed of a composite oxide having a perovskite-type structure and containing potassium (K), sodium (Na), and niobium (Nb), and has a first peak derived from a (100) plane, a second peak derived from a (010) plane, and a third peak derived from a (001) plane in an X-ray diffraction pattern obtained by θ-2θ measurement.

A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.

According to one embodiment, an electrode material is provided. The electrode material includes active material particle containing: a niobium-titanium composite oxide having an average composition in which a molar ratio of niobium to titanium (M.sub.Nb/M.sub.Ti) is greater than 2; and at least one element A selected from the group consisting of potassium, iron and phosphorus. The active material particle contain the element A at a concentration in the range of 100 ppm to 2000 ppm.

The solid electrolyte material of the present disclosure includes Li, M, O, X, and F. M is at least one element selected from the group consisting of Ta and Nb. X is at least one element selected from the group consisting of Cl, Br, and I.

A lead-free lithium doped potassium sodium niobate piezoelectric ceramic material in powdered form and having a single crystalline phase and uses thereof are described. Methods of making the said piezoelectric ceramic material are also described.

An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1

Li.sub.24-b*y-c*z-a*xM.sup.1.sub.yM.sup.2.sub.zM.sup.3.sub.xO.sub.12-δ  (1)

wherein M.sup.1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.