A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO.sub.3, wherein at least one of A and B in ABO.sub.3 is substituted and doped with another atom having a larger atom radius, and ABO.sub.3 becomes A.sub.1-xA.sub.xB.sub.1-yB.sub.yO.sub.3 (where x>=0, y>=0, at least one of x and y?0, a dopant A has an atom radius greater than A and/or a dopant B has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

A perovskite material represented by Formula 1:
Li.sub.xA.sub.yM.sub.zO.sub.3-?Formula 1 wherein in Formula 1, 0<x?1, 0<y?1, 0<x+y<1, 0<z?1.5, 0???1, A is H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, or a combination thereof, and M is Ni, Pd, Pb, Fe, Ir, Co, Rh, Mn, Cr, Ru, Re, Sn, V, Ge, W, Zr, Mo, Hf, U, Nb, Th, Ta, Bi, Li, H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Mg, Al, Si, Sc, Zn, Ga, Ag, Cd, In, Sb, Pt, Au, or a combination thereof.

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-BON oxynitride. When the A-BON oxynitride is represented by the compositional formula A.sub.aB.sub.bO.sub.oN.sub.n, (o+n)/a<3.00 is satisfied.

To provide a thermoelectric conversion material having low environmental load and an excellent thermoelectric figure of merit ZT and a thermoelectric conversion module including the thermoelectric conversion material. A thermoelectric conversion material of the present invention is characterized by being a compound represented by Chemical Formula (1).

Cu.sub.26-xM.sub.xA.sub.2E.sub.6-yS.sub.32(1)

In Chemical Formula (1), M represents a metal material including at least one of Mn, Fe, Co, Ni, and Zn; A represents a metal material including at least one of Nb and Ta; E represents a metal material including at least one of Si, Ge, and Sn; x represents a numerical value of 0 or more and 4 or less; and y represents a numerical value of more than 0 and 1 or less.

Provided, as a transparent magneto-optical material which does not absorb fiber laser light within a wavelength range of 0.9-1.1 m and is thus suitable for constituting a magneto-optical device such as an optical isolator wherein the formation of a thermal lens is suppressed, is a magneto-optical material which is composed of a transparent ceramic that contains a complex oxide represented by formula (1) as a main component, or which is composed of a single crystal of a complex oxide represented by formula (1).
Tb.sub.2xR.sub.2(2-x)O.sub.8-x(1)
(In the formula, 0.800<x<1.00, and R represents at least one element selected from the group consisting of silicon, germanium, titanium, tantalum tin, hafnium and zirconium (excluding the cases where R represents only silicon, germanium or tantalum)).

A solid electrolyte capable of securing grain boundary resistance even when firing is performed at a relatively low temperature and a battery using the solid electrolyte are provided. The solid electrolyte includes a first electrolyte which contains a lithium composite metal compound, and a second electrolyte which contains Li and at least two kinds of metal elements selected from group 5 elements in period 5 or higher or group 15 elements in period 5 or higher.

A lithium-containing oxide having a cubic garnet structure and wherein, when a solid-state .sup.19F-NMR spectrum is measured under conditions where a .sup.19F nucleus resonance frequency is 564 MHz, at least one peak is observed within a chemical shift range of ?100 to 50 ppm, based on a chemical shift of polytetrafluoroethylene being ?122 ppm.

The present invention relates to a solid electrolyte comprising a sulfide-based compound and an all-solid-state battery applied therewith and, more particularly, to a solid electrolyte comprising a sulfide-based compound that is free of phosphorus (P) element but exhibits high ionic conductivity, and an all-solid-state battery applied therewith. The sulfide-based solid electrolyte and the all-solid-state battery applied therewith according to the present invention exhibit improved reactivity to moisture to prevent the generation of toxic gas, resulting in an improvement in safety and stability and do not reduce in ion conductivity even after being left in air, and the solid electrolyte is easy to handle and store thanks to the improved shelf stability thereof.

The present invention involves pigments derived from compounds with the LiSbO.sub.3-type or LiNbO.sub.3-type structures. These compounds possess the following formulations M.sup.1M.sup.5Z.sub.3, M.sup.1M.sup.2M.sup.4M.sup.5Z.sub.6, M.sup.1M.sup.3.sub.2M.sup.5Z.sub.6, M.sup.1M.sup.2M.sup.3M.sup.6Z.sub.6, M.sup.1.sub.2M.sup.4M.sup.6Z.sub.6, M.sup.1M.sup.5M.sup.6Z.sub.6, or a combination thereof. The cation M.sup.1 represents an element with a valence of +1 or a mixture thereof, the cation M.sup.2 represents an element with a valence of +2 or a mixture thereof, the cation M.sup.3 represents an element with a valence of +3 or a mixture thereof, the cation M.sup.4 represents an element with a valence of +4 or a mixture thereof, the cation M.sup.5 represents an element with a valence of +5 or a mixture thereof, and the cation M.sup.6 represents an element with a valence of +6 or a mixture thereof. The cation M is selected from H, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Ag, Zn, B, Al, Ga, In, Si, Ge, Sn, P, Sb, or Te. The anion Z is selected from N, O, S, Se, Cl, F, hydroxide ion or a mixture thereof. Along with the elements mentioned above vacancies may also reside on the M or Z sites of the above formulations such that the structural type is retained. The above formula may also include M dopant additions below 20 atomic %, where the dopant is selected from H, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ni, Cu, Ag, Zn, B, Al, Ga, In, Si, Ge, Sn, P, Sb, Bi, Te, or mixtures thereof.

The solid electrolyte according to an embodiment of the present disclosure is represented by the following formula (1):
Li.sub.7?yLa.sub.3(Zr.sub.2?x?yGe.sub.xM.sub.y)O.sub.12(1) wherein 0.00<x?0.40, 0.00<y?1.50, M is Sb or is Sb and an element of at least one of Nb and Ta.