The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO.sub.2Cl.sub.2.

Molybdenum precursors with high purity and methods for purifying molybdenum precursors are provided. A method comprises obtaining a first vessel comprising a solid reagent; vaporizing at least a portion of the solid reagent to produce a vapor comprising a MoCl.sub.5 vapor and a molybdenum impurity vapor; flowing at least a portion of the MoCl.sub.5 vapor and at least a portion of the molybdenum impurity vapor to a second vessel; condensing at least a portion of the MoCl.sub.5 vapor in the second vessel to separate the MoCl.sub.5 from the molybdenum impurity; and removing at least a portion of the molybdenum impurity vapor from the second vessel to obtain a MoCl.sub.5 precursor.

Molybdenum precursors with high purity and methods for purifying molybdenum precursors are provided. A method comprises obtaining a first vessel comprising a solid reagent; vaporizing at least a portion of the solid reagent to produce a vapor comprising a MoCl.sub.5 vapor and a molybdenum impurity vapor; flowing at least a portion of the MoCl.sub.5 vapor and at least a portion of the molybdenum impurity vapor to a second vessel; condensing at least a portion of the MoCl.sub.5 vapor in the second vessel to separate the MoCl.sub.5 from the molybdenum impurity; and removing at least a portion of the molybdenum impurity vapor from the second vessel to obtain a MoCl.sub.5 precursor.

The disclosed and claimed subject matter relates to ultra-pure molybdenum dichloride dioxide (i.e., MoO2Cl2) that is substantially free of moisture (H2O), hydrogen chloride (HCl) and/or residual protons. packaged forms of the same and a method of preparing the same.

The disclosed and claimed subject matter relates to ultra-pure molybdenum dichloride dioxide (i.e., MoO2Cl2) that is substantially free of moisture (H2O), hydrogen chloride (HCl) and/or residual protons. packaged forms of the same and a method of preparing the same.

The present invention concerns specific new compounds of formula Li.sub.(2x)Na.sub.(x)MO.sub.(2y/2)F.sub.(1+y) (where 0x0.2 and 0.6y0,8 and M is a transition metal), cathode material comprising the new compounds, batteries and lithium-cells comprising said new compound or cathode material, a process for the production of the new compound and their use.

A method and a device for preparing MoF.sub.6 based on plasma activation of SF.sub.6. The method includes the following steps: S1, filling a discharge area of a plasma reactor with molybdenum powder; S2, introducing an inert gas and an SF.sub.6 gas into the discharge area of the plasma reactor, where the inert gas is ionized into plasma, and the SF.sub.6 gas is ionized into fluorine atoms and low-fluorine sulfides after being activated by the plasma; and S3, generating an MoF.sub.6 gas and sulfur elements through reaction of the fluorine atoms and the low-fluorine sulfides with the molybdenum powder.

A method and a device for preparing MoF.sub.6 based on plasma activation of SF.sub.6. The method includes the following steps: S1, filling a discharge area of a plasma reactor with molybdenum powder; S2, introducing an inert gas and an SF.sub.6 gas into the discharge area of the plasma reactor, where the inert gas is ionized into plasma, and the SF.sub.6 gas is ionized into fluorine atoms and low-fluorine sulfides after being activated by the plasma; and S3, generating an MoF.sub.6 gas and sulfur elements through reaction of the fluorine atoms and the low-fluorine sulfides with the molybdenum powder.

A molybdenum oxychloride or a tungsten oxychloride, wherein the molybdenum oxychloride or the tungsten oxychloride has a moisture content of less than 1 wt %. A method of producing a molybdenum oxychloride or a tungsten oxychloride, wherein a molybdenum oxide or a tungsten oxide as a raw material is subject to dehydration treatment at 400 C. or higher and 800 C. or less, and the raw material that underwent dehydration treatment is thereafter reacted with a chlorine gas to synthesize a molybdenum oxychloride or a tungsten oxychloride. A molybdenum oxychloride or a tungsten oxychloride is thereby provided having a low moisture content, and a production method thereof is provided.

Methods for removing impurities from precursors and related systems are provided. A method comprises at least one thermal cycle. The at least one thermal cycle comprises one or more of the following steps: heating a vessel comprising a precursor and at least one impurity to a temperature for a duration sufficient to vaporize at least a portion of the at least one impurity; measuring a vapor pressure within the vessel to obtain a measured vapor pressure and comparing the measured vapor pressure to a set point vapor pressure; and when the measured vapor pressure is above or within the set point vapor pressure, removing, from the vessel, at least a portion of a vapor comprising the at least one impurity. Other methods and systems are provided herein.