C01G39/06

Method of forming a semiconductor device using layered etching and repairing of damaged portions

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

Method of forming a semiconductor device using layered etching and repairing of damaged portions

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

REACTOR FOR CONTINUOUS PRODUCTION OF GRAPHENE AND 2D INORGANIC COMPOUNDS

Provided is a continuous reactor system for producing graphene or an inorganic 2-D compound, the reactor comprising: (a) a rust body comprising an outer wall and a second body comprising an inner wall, wherein the inner wall defines a bore and the first body is configured within the bore and a motor is configured to rotate the first and/or second body; (b) a reaction chamber between the outer wall of the first body and the inner wall of the second body; (c) a first inlet and a second inlet disposed at first end of the reactor and in fluid communication with the reaction chamber; (d) a first outlet and a second outlet disposed downstream from the first inlet, the outlets being in fluid communication with the reaction chamber; and (e) a flow return conduit having two inlets/outlets in fluid communication with two ends of the reactor.

OPPORTUNITIES FOR RECOVERY AUGMENTATION PROCESS AS APPLIED TO MOLYBDENUM PRODUCTION
20210071283 · 2021-03-11 ·

A copper/molybdenum separation processor is provide featuring a slurry/media mixture stage configured to receive a conditioned pulp containing hydrophobic molybdenite and hydrophilic copper, iron and other minerals that is conditioned with sodium hydrosulfide together with an engineered polymeric hydrophobic media, and provide a slurry/media mixture; and a slurry/media separation stage configured to receive the slurry/media mixture, and provide a slurry product having a copper concentrate and a polymerized hydrophobic media product having a molybdenum concentrate that are separately directed for further processing. The slurry/media mixture stage include a molybdenum loading stage configured to contact the conditioned pulp with the engineered polymeric hydrophobic media in an agitated reaction chamber, and load the hydrophobic molybdenite on the engineered polymeric hydrophobic media.

OPPORTUNITIES FOR RECOVERY AUGMENTATION PROCESS AS APPLIED TO MOLYBDENUM PRODUCTION
20210071283 · 2021-03-11 ·

A copper/molybdenum separation processor is provide featuring a slurry/media mixture stage configured to receive a conditioned pulp containing hydrophobic molybdenite and hydrophilic copper, iron and other minerals that is conditioned with sodium hydrosulfide together with an engineered polymeric hydrophobic media, and provide a slurry/media mixture; and a slurry/media separation stage configured to receive the slurry/media mixture, and provide a slurry product having a copper concentrate and a polymerized hydrophobic media product having a molybdenum concentrate that are separately directed for further processing. The slurry/media mixture stage include a molybdenum loading stage configured to contact the conditioned pulp with the engineered polymeric hydrophobic media in an agitated reaction chamber, and load the hydrophobic molybdenite on the engineered polymeric hydrophobic media.

SYNTHESIS OF LUMINESCENT 2D LAYERED MATERIALS USING AN AMINE-METAL COMPLEX AND A SLOW SULFUR-RELEASING PRECURSOR
20210047561 · 2021-02-18 ·

Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time.

SYNTHESIS OF LUMINESCENT 2D LAYERED MATERIALS USING AN AMINE-METAL COMPLEX AND A SLOW SULFUR-RELEASING PRECURSOR
20210047561 · 2021-02-18 ·

Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time.

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

METHOD FOR PREPARING CARBON NANOSTRUCTURE COMPRISING MOLYBDENUM DISULFIDE, LITHIUM SECONDARY BATTERY CATHODE COMPRISING CARBON NANOSTRUCTURE COMPRISING MOLYBDENUM DISULFIDE, PREPARED THEREBY, AND LITHIUM SECONDARY BATTERY COMPRISING SAME
20210050589 · 2021-02-18 · ·

A method for preparing a carbon nanostructure including molybdenum disulfide is discussed. More particularly, a method is discussed for preparing a carbon nanostructure in which molybdenum disulfide is located on the surface by melt diffusion and heat treatment of a mixture of a molybdenum precursor, a carbon nanostructure, and sulfur. Also, a positive electrode of a lithium secondary battery including a carbon nanostructure including molybdenum disulfide as an additive, and a lithium secondary battery including the same. In the case of the lithium secondary battery including the positive electrode to which the carbon nanostructure including molybdenum disulfide was applied, the carbon nanostructure including the molybdenum disulfide adsorbs lithium polysulfide (LiPS) generated during the charging/discharging process of the lithium secondary battery, thereby increasing the charging/discharging efficiency of the battery and improving lifetime characteristics.