A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

According to one embodiment, there is provided an active material. The active material contains a composite oxide represented by a following general formula:
the general formula: Li.sub.x(Nb.sub.1yTa.sub.y).sub.2zTi.sub.1+0.5zM.sub.0.5zO.sub.7, in which 0x5, 0y1, and 0<z1, and M is at least one metal element selected from the group consisting of Mo and W.

According to one embodiment, there is provided an active material. The active material includes a composite oxide. The composite oxide has a monoclinic crystal structure. The composite oxide is represented by a general formula of Li.sub.wNa.sub.4-xM1.sub.yTi.sub.6-zM2.sub.zO.sub.14+. In the general formula, the M1 is at least one element selected from the group consisting of Rb, Cs, K and H; the M2 is at least one metallic element selected from the group consisting of Zr, Sn, V, Nb, Ta, Mo, W, Fe, Co, Mn and Al; w is within a range of 0w<12; x is within a range of 0<x<4; y is within a range of 0y<2; z is within a range of 0<z<6; and is within a range of 0.30.3.

The invention discloses a method for preparing nanometer alkali metal tungsten bronze by hydrolysis of a coordination compound of cation at a lower temperature, and the application of nanometer alkali metal tungsten bronze coating. The method adopts one-step low-temperature heating hydrolysis to synthesize nano alkali metal tungsten bronze, and the preparation process requires no special equipment, no high temperature and high pressure, mild process conditions, low energy consumption, short cycle, high productions, high yield and low cost. The synthesized products have good crystallinity, which are Cs.sub.XWO.sub.3, Rb.sub.XWO.sub.3, K.sub.XWO.sub.3, Na.sub.XWO.sub.3, in which X=0.20.33, the synthesized short rod-like alkali metal tungsten bronze particle length is 10150 nm, the diameter is 1050 nm, and the synthesized isometric alkali metal tungsten bronze particle size is less than 100 nm in all direction. The above powders have excellent near-infrared shielding properties and visible light transmission properties, good UV shielding performance and certain middle and far infrared shielding performance. The nanometer alkali metal tungsten bronze coating prepared by the invention is an simple and controllable preparation process, and has high near infrared shielding performance and excellent ultraviolet shielding performance.

An active material includes a composite oxide represented by the general formula Li.sub.aTi.sub.bNb.sub.2W.sub.cO.sub.2b+3c+5+ and satisfying 0ab+3c+4, 0<b<2, 0<c<2, 1.9b+2.85c+4.752.1b+3.15c+5.25. A crystal structure of the composite oxide is at least one of a monoclinic structure and an orthorhombic structure.

Provided are an X-ray shielding material capable of improving heat dissipation efficiency as compared with the related art, and thus contributing to reduction in size and manufacturing cost of an X-ray inspection apparatus, an X-ray inspection apparatus including the X-ray shielding material, and a method of manufacturing an X-ray shielding material. The X-ray shielding material is used in an X-ray inspection apparatus and shields X-rays, and the X-ray shielding material is configured by a sintered body containing a metal binder formed of metal having a higher thermal conductivity than lead, and a metal powder of metal having predetermined shielding performance against the X-rays.

Near-infrared absorbing particles that includes a cesium tungstate is provided. In the near-infrared absorbing particles, the cesium tungstate has a pseudo hexagonal crystal structure modulated to one or more crystal structures selected from orthorhombic crystal, rhombohedral crystal, and cubic crystal. The cesium tungstate is represented by a general formula Cs.sub.xW.sub.yO.sub.z, and has a composition within a region surrounded by four straight lines of x=0.6y, z=2.5y, y=5x, and Cs.sub.2O:WO.sub.3=m:n (m and n are integers) in a ternary composition diagram with Cs, W, and O at each vertex.

The invention relates to a mixed-anion solid electrolyte, having the following chemical formula: Li.sub.dAl.sub.1cY.sub.cCl.sub.3aX.sub.b, wherein Y is selected from at least one of Si.sup.4+, Ge.sup.4+, Sn.sup.4+, Sb.sup.5+, Nb.sup.5+, Ta.sup.5+, Mo.sup.6+, and W.sup.6+, and X is selected from at least one of O.sup.2, S.sup.2, F.sup., Br.sup., I.sup., and BH.sup.4; and wherein 0<d2, 0<b2, 0<a2, 0<c<0.75 and charge balance is reached.

Performance is improved. There is provided a negative electrode material for a battery, in which the negative electrode material includes carbon, sodium tungstate, and silicon particles 33 including silicon, and in the silicon particle 33, a ratio of the amount of Si in Si2p derived from elemental silicon to the amount of Si in Si2p derived from SiO.sub.2 in a surface layer when measured by X-ray photoelectron spectroscopy is 3 or more on an atomic concentration basis.

There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10.sup.1 cm. There is also provided a semiconductor device including the oxide semiconductor film.