A tungsten hexafluoride manufacturing method of the present invention includes a reaction step of reacting tungsten with a gas of a fluorine element-containing compound so as to obtain a mixture that contains tungsten hexafluoride and hydrogen fluoride-containing impurities, and a discharge step of performing distillation of the mixture while performing a discharge operation at least two or more times during the distillation so as to obtain tungsten hexafluoride, the discharge operation being an operation in which a storage operation and a purge operation are alternately performed.

Disclosed are a tungsten hexafluoride preparation method and apparatus based on photoelectric synergy. A photocatalyst and metal tungsten are sequentially filled in a discharge area of a plasma reactor in a direction of gas entry, and the discharge area of the plasma reactor is irradiated with light at the same time; the background gas generates a large amount of plasma in the discharge area, SF.sub.6 undergoes decomposition under the synergistic effect of photocatalysis and plasma, SF.sub.6 is decomposed to generate fluorine atoms and low-fluorine sulfides such as SF.sub.5 and SF.sub.4. The generated fluorine ions, SF.sub.5, SF.sub.4 and low-fluorine sulfides further react with metal tungsten to generate WF.sub.6 specialty gas, which not only realizes the utilization of fluorine resources of SF.sub.6, but also replaces highly toxic fluorine gas with non-toxic SF.sub.6 exhaust gas in the plasma reactor for reaction, thereby ensuring safe operation and low energy consumption.

Disclosed are a tungsten hexafluoride preparation method and apparatus based on photoelectric synergy. A photocatalyst and metal tungsten are sequentially filled in a discharge area of a plasma reactor in a direction of gas entry, and the discharge area of the plasma reactor is irradiated with light at the same time; the background gas generates a large amount of plasma in the discharge area, SF.sub.6 undergoes decomposition under the synergistic effect of photocatalysis and plasma, SF.sub.6 is decomposed to generate fluorine atoms and low-fluorine sulfides such as SF.sub.5 and SF.sub.4. The generated fluorine ions, SF.sub.5, SF.sub.4 and low-fluorine sulfides further react with metal tungsten to generate WF.sub.6 specialty gas, which not only realizes the utilization of fluorine resources of SF.sub.6, but also replaces highly toxic fluorine gas with non-toxic SF.sub.6 exhaust gas in the plasma reactor for reaction, thereby ensuring safe operation and low energy consumption.

Methods for removing impurities from precursors and related systems are provided. A method comprises at least one thermal cycle. The at least one thermal cycle comprises one or more of the following steps: heating a vessel comprising a precursor and at least one impurity to a temperature for a duration sufficient to vaporize at least a portion of the at least one impurity; measuring a vapor pressure within the vessel to obtain a measured vapor pressure and comparing the measured vapor pressure to a set point vapor pressure; and when the measured vapor pressure is above or within the set point vapor pressure, removing, from the vessel, at least a portion of a vapor comprising the at least one impurity. Other methods and systems are provided herein.

Methods for removing impurities from precursors and related systems are provided. A method comprises at least one thermal cycle. The at least one thermal cycle comprises one or more of the following steps: heating a vessel comprising a precursor and at least one impurity to a temperature for a duration sufficient to vaporize at least a portion of the at least one impurity; measuring a vapor pressure within the vessel to obtain a measured vapor pressure and comparing the measured vapor pressure to a set point vapor pressure; and when the measured vapor pressure is above or within the set point vapor pressure, removing, from the vessel, at least a portion of a vapor comprising the at least one impurity. Other methods and systems are provided herein.

Disclosed are a tungsten hexafluoride preparation method and apparatus based on photoelectric synergy. A photocatalyst and metal tungsten are sequentially filled in a discharge area of a plasma reactor in a direction of gas entry, and the discharge area of the plasma reactor is irradiated with light at the same time; the background gas generates a large amount of plasma in the discharge area, SF.sub.6 undergoes decomposition under the synergistic effect of photocatalysis and plasma, SF.sub.6 is decomposed to generate fluorine atoms and low-fluorine sulfides such as SF.sub.5 and SF.sub.4. The generated fluorine ions, SF.sub.5, SF.sub.4 and low-fluorine sulfides further react with metal tungsten to generate WF.sub.6 specialty gas, which not only realizes the utilization of fluorine resources of SF.sub.6, but also replaces highly toxic fluorine gas with non-toxic SF.sub.6 exhaust gas in the plasma reactor for reaction, thereby ensuring safe operation and low energy consumption.

Disclosed are a tungsten hexafluoride preparation method and apparatus based on photoelectric synergy. A photocatalyst and metal tungsten are sequentially filled in a discharge area of a plasma reactor in a direction of gas entry, and the discharge area of the plasma reactor is irradiated with light at the same time; the background gas generates a large amount of plasma in the discharge area, SF.sub.6 undergoes decomposition under the synergistic effect of photocatalysis and plasma, SF.sub.6 is decomposed to generate fluorine atoms and low-fluorine sulfides such as SF.sub.5 and SF.sub.4. The generated fluorine ions, SF.sub.5, SF.sub.4 and low-fluorine sulfides further react with metal tungsten to generate WF.sub.6 specialty gas, which not only realizes the utilization of fluorine resources of SF.sub.6, but also replaces highly toxic fluorine gas with non-toxic SF.sub.6 exhaust gas in the plasma reactor for reaction, thereby ensuring safe operation and low energy consumption.

A tungsten hexafluoride manufacturing method of the present invention includes a reaction step of reacting tungsten containing arsenic or an arsenic compound with a gas of a fluorine element-containing compound so as to obtain a mixture containing tungsten hexafluoride and a trivalent arsenic compound, and a distillation step of distilling and purifying the mixture so as to separate and remove a fraction containing the trivalent arsenic compound and to obtain tungsten hexafluoride.

A tungsten hexafluoride manufacturing method of the present invention includes a reaction step of reacting tungsten containing arsenic or an arsenic compound with a gas of a fluorine element-containing compound so as to obtain a mixture containing tungsten hexafluoride and a trivalent arsenic compound, and a distillation step of distilling and purifying the mixture so as to separate and remove a fraction containing the trivalent arsenic compound and to obtain tungsten hexafluoride.

Compositions are provided. A composition comprises a tungsten pentachloride compound. The tungsten pentachloride compound has an orthorhombic crystal structure as determined using Single-Crystal X-ray Diffraction. A method comprises obtaining a precursor, vaporizing the precursor to obtain a vaporized precursor, and exposing, under vapor deposition conditions, a substrate to the vaporized precursor. The precursor comprises a tungsten pentachloride compound having an orthorhombic crystal structure as determined by Single-Crystal X-Ray Diffraction. Related precursors and related methods are also provided, among other things.