C01G51/40

SOLAR ENERGY ABSORBING COATINGS AND METHODS OF FABRICATION

Methods, systems, and devices are disclosed for fabricating and implementing optically absorbing coatings. In one aspect, an optically selective coating includes a substrate formed of a solar energy absorbing material, and a nanostructure material formed over the substrate as a coating capable of absorbing solar energy in a selected spectrum and reflecting the solar energy in another selected spectrum. A concentrating solar power (CSP) system includes heat transfer fluids (HTFs); thermal energy storage system (TES); and solar receivers in communication with HTFs and including a light absorbing coating layer based on cobalt oxide nanoparticles.

Oxygen-selective anodes

The present disclosure relates to oxygen-selective anodes and methods for the use thereof.

Oxygen-selective anodes

The present disclosure relates to oxygen-selective anodes and methods for the use thereof.

ANODE COMPOSITIONS FOR SODIUM-ION BATTERIES AND METHODS OF MAKING SAME

A sodium-ion battery includes a cathode comprising sodium; and an anode composition comprising a material having the formula: A.sub.aB.sub.bC.sub.cD.sub.dO, where A is an alkali metal, alkaline earth metal, or a combination thereof, where B is titanium, C is vanadium, D is one or more transition metal element other than titanium or vanadium, a+b+c+d1, a0, b+c>0, b0, c0, d>0, and where the material comprises a ilmenite structure, triclinic VFeO.sub.4 structure, cubic Ca.sub.5Co.sub.4(VO.sub.4).sub.6 structure, dichromate structure, orthorhombic -CoV.sub.3O.sub.8 structure, brannerite structure, thortveitite structure, orthorhombic -CrPO.sub.4 structure, or the pseudo rutile structure.

CHEMICAL LOOPING SYSTEM, MATERIAL FOR CHEMICAL LOOPING SYSTEM AND PRODUCTION METHOD OF MATERIAL FOR CHEMICAL LOOPING SYSTEM

A chemical looping system includes repeating: a generation process of reacting a reduced form of a material for the chemical looping system, which contains a first element selected from the group consisting of Co and Ni and a second element selected from the group consisting of In and Ga, with carbon dioxide so as to generate an oxidized form of the material for the chemical looping system, in which the second element is oxidized by the reaction, and carbon monoxide, and a reduction treatment of reacting the oxidized form with a reducing agent and thus reducing the second element having been oxidized in the generation process so as to thereby convert the oxidized form back into the reduced form.

CHEMICAL LOOPING SYSTEM, MATERIAL FOR CHEMICAL LOOPING SYSTEM AND PRODUCTION METHOD OF MATERIAL FOR CHEMICAL LOOPING SYSTEM

A chemical looping system includes repeating: a generation process of reacting a reduced form of a material for the chemical looping system, which contains a first element selected from the group consisting of Co and Ni and a second element selected from the group consisting of In and Ga, with carbon dioxide so as to generate an oxidized form of the material for the chemical looping system, in which the second element is oxidized by the reaction, and carbon monoxide, and a reduction treatment of reacting the oxidized form with a reducing agent and thus reducing the second element having been oxidized in the generation process so as to thereby convert the oxidized form back into the reduced form.

Process and material for removing hydrogen sulfide from subterranean geological formations during drilling operations

A method of removing hydrogen sulfide from a subterranean geological formation includes injecting a drilling fluid suspension in the subterranean geological formation. The drilling fluid suspension has a pH of 10 or more and includes a layered triple hydroxide material, including manganese, cobalt, and iron, in an amount of 0.01 to 0.5 percent by weight of the drilling fluid suspension. The method further includes circulating the drilling fluid suspension in the subterranean geological formation and forming a water-based mud and scavenging the hydrogen sulfide from the subterranean geological formation by reacting the hydrogen sulfide with the layered triple hydroxide material in the water-based mud.

Process and material for removing hydrogen sulfide from subterranean geological formations during drilling operations

A method of removing hydrogen sulfide from a subterranean geological formation includes injecting a drilling fluid suspension in the subterranean geological formation. The drilling fluid suspension has a pH of 10 or more and includes a layered triple hydroxide material, including manganese, cobalt, and iron, in an amount of 0.01 to 0.5 percent by weight of the drilling fluid suspension. The method further includes circulating the drilling fluid suspension in the subterranean geological formation and forming a water-based mud and scavenging the hydrogen sulfide from the subterranean geological formation by reacting the hydrogen sulfide with the layered triple hydroxide material in the water-based mud.

POSITIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND POSITIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY

Dissolution of cobalt from a positive electrode active material is suppressed. Disclosed is a positive electrode active material for a nonaqueous electrolyte secondary battery that contains a lithium transition metal oxide. Fluorine and at least one element selected from zirconium, titanium, aluminum, magnesium, and rare earth elements adhere to the surface of the lithium transition metal oxide, and the lithium transition metal oxide contains cobalt. The lithium transition metal oxide has an average particle diameter of 10 m or less.

MACHINE LEARNING ACCELERATED IDENTIFICATION OF BIFUNCTIONAL ACTIVE SITES IN METAL-ORGANIC FRAMEWORK DERIVED METAL OXIDE HETEROSTRUCTURES FOR HIGH-PERFORMANCE METAL-AIR BATTERIES

The present disclosure relates to an air electrode for a metal-air battery including a cobalt-manganese heterostructure, a metal-air battery including the same, and a method of preparing the cobalt-manganese heterostructure. A cobalt-manganese heterostructure according to embodiments of the present disclosure exhibits excellent oxygen reduction reaction (ORR) activity and durability as well as superior oxygen evolution reaction (OER) performances including a high current density to RuO.sub.2 OER catalysts.