A mixture contains metal oxide particles that are coated with an organic compound. The organic compound is represented by Formula I:

R.sup.1COR.sup.2(I), wherein R.sup.1 is an aliphatic residue having 8 to 32 carbon atoms, wherein R.sup.2 is either OM or comprises the moiety XR.sup.3, wherein X is selected from the group consisting of O, S, NR.sup.4, wherein R.sup.4 is a hydrogen atom or an aliphatic residue, wherein R.sup.3 is a hydrogen atom or an aliphatic residue, and wherein M is a cation. The mixture may be used to connect components and/or to produce a module. A method for producing the mixture is also provided.

A method for separating an amount of osmium from a mixture containing the osmium and at least one other additional metal is provided. In particular, method for forming and trapping OsO.sub.4 to separate the osmium from a mixture containing the osmium and at least one other additional metal is provided.

A heterojunction anode for electrolysis is disclosed. The anode has a first conductive metal oxide (FCMO) layer, a second semiconductor layer contacting the FCMO layer, and one or more islands of a third semiconductor contacting the second semiconductor layer. The FCMO layer may be formed on a metallic base, such as titanium. The FCMO layer may include iridium, the second semiconductor layer may include titanium oxide, and the third semiconductor may include tin oxide. The anode may be manufactured using spray pyrolysis to apply each semiconductor material. The anode may be configured such that when placed in an electrolyte at least a portion of the second semiconductor layer and the islands are in direct physical contact with the electrolyte. The second semiconductor interlayer and third semiconductor islands enhance the production of reactive chlorine in chlorinated water. A water treatment system and method using the anode are also disclosed.

The present invention relates to a composition for forming conductive patterns and a resin structure having a conductive pattern, capable of forming a conductive micropattern on various polymer resin products or resin layers using a simplified process and exhibiting excellent heat dissipation characteristics. The composition for forming conductive patterns comprises: a polymer resin; a non-conductive metal compound represented by a specific chemical formula; and a heat-dissipating material, wherein a metal nucleus is formed from the non-conductive metal compound by the irradiation of electromagnetic waves.

An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers.

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.

The present disclosure relates to processes for recovering rare earth elements from an aluminum-bearing material. The processes can comprise leaching the aluminum-bearing material with an acid so as to obtain a leachate comprising at least one aluminum ion, at least one iron ion, at least one rare earth element, and a solid, and separating the leachate from the solid. The processes can also comprise substantially selectively removing at least one of the at least one aluminum ion and the at least one iron ion from the leachate and optionally obtaining a precipitate. The processes can also comprise substantially selectively removing the at least one rare earth element from the leachate and/or the precipitate.

A composite material structure including a matrix material layer; and a plurality of one-dimensional nanostructure distributed in the matrix material layer and having an electrical conductivity which is greater than an electrical conductivity of the matrix material layer, wherein the plurality of one-dimensional nanostructures includes a first one-dimensional nanostructure and a second one-dimensional nanostructure in contact with each other.

Disclosed herein is a method of manufacturing a membrane electrode assembly (MEA) including directly depositing a liquid suspension containing a platinum precursor onto an ionically conductive membrane (e.g., proton-exchange membrane) that, when the platinum precursor deposit layer is reduced, provides a layer that will scavenge hydrogen that has diffused back through the membrane due to cell stack pressure differential.

A heterojunction anode for electrolysis is disclosed. The anode has a first conductive metal oxide (FCMO) layer, a second semiconductor layer contacting the FCMO layer, and one or more islands of a third semiconductor contacting the second semiconductor layer. The FCMO layer may be formed on a metallic base, such as titanium. The FCMO layer may include iridium, the second semiconductor layer may include titanium oxide, and the third semiconductor may include tin oxide. The anode may be manufactured using spray pyrolysis to apply each semiconductor material. The anode may be configured such that when placed in an electrolyte at least a portion of the second semiconductor layer and the islands are in direct physical contact with the electrolyte. The second semiconductor interlayer and third semiconductor islands enhance the production of reactive chlorine in chlorinated water. A water treatment system and method using the anode are also disclosed.