The invention relates to a millimeter-sized bulk spa amorphous carbon material and a method of preparing the same, and the method comprises a step of performing a high-temperature and high-pressure (HTHP) treatment on C.sub.60 powder at a temperature of 450-1100° C., preferably 700-1000° C., more preferably 900-1000° C., and most preferably 1000° C., and a pressure of 20-37 GPa, preferably 20-30 GPa, and most preferably 27 GPa, so as to obtain the millimeter-sized bulk sp.sup.3 amorphous carbon material. The sp.sup.3 carbon content in the amorphous carbon material is adjustable by changing the temperature and pressure conditions, so that the sp.sup.3 content is greater than 80%, and the sp.sup.3 content of high-quality samples is close to 100%. The optical band gap and thermal conductivity of the series of amorphous carbon materials can be effectively adjusted. The obtained series of amorphous carbon materials have ultra-high hardnesses, high thermal conductivities, adjustable band gaps (1.90-2.79 eV) which exceed the ranges of the band gaps of amorphous silicon and germanium. As a result, a new space is opened up for the application of amorphous materials.

A negative electrode active material tor a secondary battery includes a silicate composite particle including crystalline silicon particles, an amorphous phase comprising an Li element, an O element, and an Si element, and a silicon oxide phase, wherein the silicon oxide phase and the silicon particles are dispersed in the amorphous phase.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A method of forming an alkali metal-doped calcium-SiAlON material is provided. The method includes mixing calcium-SiAlON powder and an alkali metal hydroxide to form a reaction mixture. The mixture further includes spark plasma sintering (SPS) the reaction mixture at 800 to 940 degrees Celsius (° C.) to form the alkali metal-doped calcium-SiAlON material. The alkali metal hydroxide is present in an amount of 0.1 to 10 weight percentage (wt. %), based on a total weight of the reaction mixture.

A solid electrolyte material includes a first crystal phase. The first crystal phase has a composition that is deficient in Li as compared with a composition represented by the following composition formula (1).
Li.sub.3Y.sub.1Cl.sub.6  formula (1)

Disclosed herein are embodiments of doped and undoped spherical or spheroidal lithium lanthanum zirconium oxide (LLZO) powder products, and methods of production using microwave plasma processing, which can be incorporated into solid state lithium ion batteries. Advantageously, embodiments of the disclosed LLZO powder display a high quality, high purity stoichiometry, small particle size, narrow size distribution, spherical morphology, and customizable crystalline structure.

The present invention provides stabilized amorphous calcium carbonate (ACC) formulations, comprising ACC and a non-aqueous liquid carrier in which the ACC is dispersed. The present invention further provides cosmetic and pharmaceutical compositions comprising ACC.

A method of making a liquid dispersion for the manufacture of a photonic crystal. The method comprises dispersing monodispersed spheres in a liquid to form a liquid dispersion, and subjecting the liquid dispersion to an ultrasonic treatment. Ammonia solution may also be added to the liquid dispersion. The ultrasound treatment breaks up agglomerations of monodispersed spheres, and the resulting photonic crystal made using the dispersion is more highly ordered and hence of higher quality.

The proposed method relates to the processing of carbon-containing raw material and may be used to obtain products containing amorphous silica and amorphous carbon of varying degrees of purity. The technical result consists in simplifying the production of a product containing amorphous silica and increasing the yield efficiency for such a product by decreasing the temperature to which the carbon-containing raw material is exposed. The method of producing a product containing amorphous silica and amorphous carbon includes the steps in which a carbon-containing raw material is dried at a temperature of 150-200° C. and the dried raw material is subjected to heat treatment at a temperature of 400-600° C., wherein the heat treatment is performed in the presence of an activator made of a readily fusible alloy. A device for carrying out the method is also proposed.

Provided are a method of manufacturing an amorphous silicon composite and an apparatus for manufacturing an amorphous silicon composite. The method of manufacturing an amorphous silicon composite, according to an embodiment, may include forming molten silicon by melting a silicon raw material, obtaining an amorphous silicon powder by cooling the molten silicon with a cooling device such that the molten silicon is solidified before being crystallized, obtaining amorphous nano-silicon by performing wet grinding on the amorphous silicon powder, obtaining a first mixture by mixing a first pitch with the amorphous nano-silicon, obtaining a second mixture by coating a second pitch on the first mixture, and obtaining the amorphous silicon composite by performing heat treatment on the second mixture.