According to one or more embodiments presently described, a mixture of lead oxide and lead metal particles may be formed by a method that includes forming a molten metal lead material from a solid lead metal supply material, introducing the molten metal lead material into a reaction zone of a reactor, and contacting the molten metal lead material with an oxidizing gas in the reaction zone to oxidize a portion of the molten metal lead material and form at least solid lead oxide particles and solid lead metal particles. The molten metal lead material may be introduced to the reaction zone in a laminar flow or as atomized molten particles. The weight ratio of formed solid lead oxide particles to solid lead metal particles may be less than 99:1.

A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000° C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided. A foam-like structure as described above for use in electrochemistry, solar cells, filler, thermal interface material, sensing or biological applications is further provided.

Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS.sub.3, CsNbSe.sub.3, and CsNbO.sub.x-3Q.sub.x, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

A garnet-structure complex oxide powder having formula (1) is prepared by adding an aqueous solution containing (a) Tb ion, an aqueous solution containing (b) Al ion, and an aqueous solution containing (c) Sc ion to a co-precipitating aqueous solution, to induce a co-precipitate of components (a), (b) and (c), filtering, heat drying and firing the co-precipitate.
(R.sub.1-xSc.sub.x).sub.3(A.sub.1-ySc.sub.y).sub.5O.sub.12  (1)
R is yttrium or a lanthanoid element, typically Tb, A is a Group 13 element, typically Al, x and y are 0<x<0.08 and 0.004<y<0.16.

A tool with a through hole includes a base and a diamond component held by the base, and when the length of the diamond component along a center line of the through hole is denoted as L1 and the maximum value of a diameter of a circle having the same area as a region surrounded by an outer edge of the diamond component in a cross section having the center line as a normal line is denoted as M1, the ratio L1/M1 between L1 and M1 is 0.8 or more.

The present disclosure generally relates to methods of preparing spherical salt particles for industrial, medical, and other uses. The methods can include combining the angular salt particles with a quantity of finishing media, for example, into a receptacle. Thereafter, the angular salt particles and the finishing media can be moved or agitated until the angular salt particles have a desired sphericity.

The present invention provides an electrically conductive material having excellent resistance to a high potential and strongly acidic environment and high electrical conductivity; and an electrode material and a fuel cell each including the same. The present invention also provides a method for simply and easily producing such an electrically conductive material. The present invention relates to an electrically conductive material including a titanium suboxide particulate powder, the titanium suboxide particulate powder including a rutile crystalline phase as a main phase, and having a composition of TiO.sub.n wherein n is 1.5 or more and 1.90 or less, and a brightness L* in the L*a*b*color system of 35 to 45.

A xenon adsorbent capable of efficiently adsorbing xenon, even at a low concentration, from a mixture gas is Provided. A xenon adsorbent comprising a zeolite having a pore size in the range of 3.5 to 5 Å and a silica alumina molar ratio in the range of 10 to 30.

The present invention relates to a new synthetic manganese oxide material, a method of synthesis of the new manganese oxide material, and use of the new synthetic manganese oxide as a secondary battery active cathode material in an electrochemical application.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: M.sub.yV.sub.1-ySn.sub.xSb.sub.2Te.sub.x+3, wherein V is vacancy, M is at least one alkali metal, x≥6, and 0<y≤0.4.