The invention relates to a process for the preparation of a vanadium-carbon phosphate composite material, a vanadium-carbon phosphate composite material obtained according to the process, and to the uses of the composite material, especially as a precursor for the synthesis of electrochemically-active materials, electrode or active anode material.

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 510.sup.17 cm.sup.3, an impurity concentration of oxygen between about 210.sup.17 cm.sup.3 and about 110.sup.20 cm.sup.3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 110.sup.16 cm.sup.3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm.sup.1 at wavenumbers of approximately 3175 cm.sup.1, 3164 cm.sup.1, and 3150 cm.sup.1, and wherein, at wavenumbers between about 3200 cm.sup.1 and about 3400 cm.sup.1 and between about 3075 cm.sup.1 and about 3125 cm.sup.1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) ?c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5?10.sup.17 cm.sup.?3; an impurity concentration of oxygen between about 2?10.sup.17 cm.sup.?3 and about 1?10.sup.20 cm.sup.?3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1?10.sup.16 cm.sup.?3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm.sup.?1 at wavenumbers of approximately 3175 cm.sup.?1, 3164 cm.sup.?1, and 3150 cm.sup.?1; and wherein, at wavenumbers between about 3200 cm.sup.?1 and about 3400 cm.sup.?1 and between about 3075 cm.sup.?1 and about 3125 cm.sup.?1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

A composition and method of preparation of mixed valence manganese oxide, nickel-doped mixed valence manganese oxide and cobalt-doped mixed valence manganese oxide nanoparticles as well as tri-manganese tetroxide, nickel-doped tri-manganese tetroxide and cobalt-doped tri-manganese tetroxide nanoparticles for use as electrodes for aqueous energy storage devices.

The present invention relates to zeolite containing Cu2+ (?) and Cu2+ (?) having different NO adsorption capacities loaded at a specific ratio, wherein the zeolite is chabazite (CHA)-type zeolite, particularly chabazite (CHA)-type zeolite loaded with divalent copper ions in which the NO adsorption area ratio of Cu2+ (?)/Cu2+ (?) after exposure to NO (nitrogen oxide) for 180 sec is 80% or more. In addition, the present invention relates to a method of preparing zeolite that is ion-exchanged in a slurry state and to a catalyst including the specified chabazite (CHA)-type zeolite.

A negative electrode active material including a silicon-containing alloy having a ternary alloy composition expressed by SiSnTi and including a structure in which an a-Si phase containing amorphous or low-crystalline silicon formed by dissolving tin in a crystal structure of silicon is dispersed in a parent phase of a silicide phase including TiSi.sub.2, wherein when a peak intensity of a SiO bond peak that is observed at a position where an interatomic distance in a radial wave function observed by XAFS is 0.13 nm is S(1) and a peak intensity of a SiSi bond peak that is observed at a position where the interatomic distance is 0.2 nm is S(2), a relation of S(2)>S(1) is satisfied is used for an electrical device. When used, the negative electrode active material achieves both cycle durability and charging-discharging efficiency for an electrical device such as a lithium ion secondary battery.

An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2=20 to 70 obtained under X-ray irradiation, and an XRC half width of 15.0 or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 m, and 25 or less pores having a diameter of 0.2 m to 1.0 m when a photograph of a viewing area 370.0 m in a vertical direction and 372.0 m in a horizontal direction taken at a magnification factor of 1000 is visually observed.

A surface-treated infrared absorbing fine particle dispersion liquid wherein surface-treated infrared absorbing fine particles are dispersed in a liquid medium, and are an infrared absorbing transparent substrate having a coating layer in which the surface-treated infrared absorbing fine particles. This is a surface-treated infrared absorbing fine particle dispersion liquid in which surface treated infrared absorbing fine particles are dispersed in a liquid medium, wherein the surface-treated infrared absorbing fine particles are infrared absorbing fine particles, each surface is coated with a coating layer containing at least one selected from a hydrolysis product of a metal chelate compound, a polymer of the hydrolysis product of the metal chelate compound, a hydrolysis product of a metal cyclic oligomer compound, and a polymer of the hydrolysis product of the metal cyclic oligomer compound, and this is an infrared absorbing transparent substrate prepared using the surface-treated infrared absorbing fine particle dispersion liquid.

A system and method for producing refined biomethane gas from a renewable natural gas source. The method may include receiving, by a vessel, processed biogas, the processed biogas having been processed from a renewable natural gas source. The method may include receiving, by a nitrogen rejection vessel assembly comprising a nitrogen rejection vessel, gas from the vessel. The method may include separating, by the nitrogen rejection vessel assembly, at least some nitrogen-containing molecules from the received gas. The method may include outputting, by the nitrogen rejection vessel assembly, nitrogen-removed gas. The method may include compressing, by a compressor, the nitrogen-removed gas. The method may include removing, by a dehydration vessel, at least some moisture from the compressed nitrogen-removed gas. The method may include outputting, by the dehydration vessel, refined biomethane gas.

A gallium-containing nitride crystals comprising: a top surface having a crystallographic orientation within 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) ?c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen >5?10.sup.17 cm.sup.?3; an impurity concentration of oxygen between 2?10.sup.17 cm.sup.?3 and 1?10.sup.20 cm.sup.?3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl >1?10.sup.16 cm.sup.?3; a compensation ratio between 1.0 and 4.0; an absorbance per unit thickness of at least 0.01 cm.sup.?1 at wavenumbers of 3175 cm.sup.?1, 3164 cm.sup.?1, and 3150 cm.sup.?1; and wherein, at wavenumbers between 3200 cm.sup.?1 and 3400 cm.sup.?1 and between 3075 cm.sup.?1 and 3125 cm.sup.?1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness >10% of the absorbance per unit thickness at 3175 cm.sup.?1.