A slurry of the graphene oxides comprises the graphene oxides and a solvent. The graphene oxides include a strong graphene oxide and a weak graphene oxide. The slurry can be used to make composite films of graphene oxides and graphene heat-conducting films. The slurry includes two graphene oxides with different degrees of oxidation, which can increase a carbon content in the graphene oxide per unit mass, so that the finally obtained graphene heat-conducting film has more carbon.

Provided is a high-density lithium-containing garnet crystal body. The lithium-containing garnet crystal body has a relative density of 99% or more, belongs to a tetragonal system, and has a garnet-related type structure. A method of producing a Li.sub.7La.sub.3Zr.sub.2O.sub.12 crystal, which is one example of this lithium-containing garnet crystal body, includes melting a portion of a rod-like raw material composed of polycrystalline Li.sub.7La.sub.3Zr.sub.2O.sub.12 belonging to a tetragonal system while rotating it on a plane perpendicular to the longer direction and moving the melted portion in the longer direction. The moving rate of the melted portion is preferably 8 mm/h or more but not more than 19 mm/h. The rotational speed of the raw material is preferably 30 rpm or more but not more than 60 rpm. By increasing the moving rate of the melted portion, decomposition of the raw material due to evaporation of lithium can be prevented and by increasing the rotational speed of the raw material, air bubbles can be removed.

One aspect of the present invention is an energy storage device including a negative electrode including a negative electrode substrate and a negative active material layer stacked directly or indirectly on at least one surface of the negative electrode substrate, the negative active material layer containing a negative active material, the negative active material containing hollow graphite particles having a median diameter D1 and solid graphite particles having a median diameter D2 smaller than the median diameter of the hollow graphite particles.

Disclosed is a method for manufacturing crystals of aluminates of one or more element(s) other than aluminium, referred to as “A. The method includes: placing starting reagents, including at least one aluminium element source and a source of the element(s) A that has a degree of oxidation of between 1 and 6, in suspension in a liquid medium, forming a suspension referred to as the “starting suspension”; milling the starting suspension at ≤50° C., in a three-dimensional liquid medium ball mill for ≤5 minutes; recovering, at the outlet of the three-dimensional ball mill, a suspension referred to as the “end suspension” including the starting reagents in activated form or crystals of aluminate of the element(s) A generally in hydrated form; if required, calcination of the end suspension when it includes the starting reagents in activated form, to obtain generally non-hydrated crystals of aluminate of the element(s) A.

The present disclosure provides, for example, systems and methods for generating carbon particles. Carbon particles may have a total content of polycyclic aromatic hydrocarbons of less than or equal to about 0.5 parts per million, a content of benzo[a]pyrene of less than or equal to about 5 parts per billion, and a water spreading pressure that is less than about 5 mJ/m.sup.2. A carbon particle among the carbon particles may comprise less than about 0.3% sulfur by weight or less than or equal to about 0.03% ash by weight.

Provided is a target plate for radioisotope production that has sufficient durability and sufficient heat resistance for use in radioisotope production and that is capable of reducing the extent of radioactivation. In a target plate for radioisotope production, a support substrate, which supports a target, includes a graphite film(s). The thermal conductivity in a surface direction of the graphite film(s) is 1200 W/(m.Math.K) or greater, and the thickness of the graphite film(s) is 0.05 μm or greater and 100 μm or less.

Provided are a low-viscosity graphene oxide slurry and a preparation method thereof, a graphene oxide film and a preparation method thereof, and a graphene heat-conducting film and a preparation method thereof. A main method used comprises ultramicro-refining graphene oxide under high-pressure shearing, high-speed impacting and a strong cavitation action to reduce a flake diameter of the graphene oxide, thereby reducing a viscosity of the graphene oxide slurry and increasing a solid content of the graphene oxide slurry, so that an efficiency of coating the graphene oxide slurry into the graphene oxide film is improved.

A silicon ⋅ silicon oxide-carbon complex has a core-shell structure in which the core comprises silicon particles, a silicon oxide compound represented by SiOx (0<×2), and magnesium silicate, and the shell forms a carbon coating, and has a specific range of conductivity, whereby the use of the complex as a negative electrode active material for a secondary battery can provide the secondary battery with an improvement in capacity as well as cycle characteristics and initial efficiency.

To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO.sub.4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO.sub.4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm.

A method for preparing particles of alkali metal bicarbonate by crystallization from a solution of alkali metal carbonate and/or bicarbonate in the presence of an additive in the solution, selected from the sulfates, sulfonates, the polysulfonates, the mines, the hydroxysultaines, the polycarboxylates, the polysaccharides, the polyethers and the etherphenols, alkali metal hexametaphosphate, the phosphates such as the organophosphates or the phosphonates, the sulfosuccinates, the amido-sulfonates, the aminosulfonates, preferably selected from: the phosphates, the organophosphates or the phosphonates, and such that the additive is present in the solution at a concentration of at least 1 ppm and preferably of at most 200 ppm.