C01P2006/10

ORGANOSILICON PRECURSORS FOR DEPOSITION OF SILICON-CONTAINING FILMS

A composition comprises at least one a composition comprising at least one organosilicon compound which has two or more silicon atoms connected to either a carbon atom or a hydrocarbon moiety.

CONDUCTIVE MATRIX AND SULFUR COMPOSITE
20220234893 · 2022-07-28 ·

An activated carbon-coated carbon black material having a nitrogen BET surface area of about 850 to 1800 m.sup.2/g, a packing density of at least 0.8 g/cc as determined at a compressive force of 500 kgf/cm.sup.2 on dry carbon powder, an electrical conductivity of a least 10 S/cm at a compressive force of 500 kgf/cm.sup.2 on dry carbon powder and electrodes and batteries comprising the carbon material. Methods for preparing such carbon materials from sugar, dextrose, oils and carbon black are described. The material is comprised of carbon black particles coated with a porous activated carbon shell.

Positive Electrode Active Material Precursor for Secondary Battery, Preparation Method Thereof, and Method of Preparing Positive Electrode Active Material

A method of preparing a positive electrode active material precursor for a secondary battery includes preparing a positive electrode active material precursor by a co-precipitation reaction while adding a transition metal-containing solution containing transition metal cations, a basic solution, and an ammonium solution to a batch-type reactor, wherein a molar ratio of ammonium ions contained in the ammonium solution to the transition metal cations contained in the transition metal-containing solution added to the batch-type reactor is 0.5 or less, and a pH in the batch-type reactor is maintained at 11.2 or less.

CARBON NANOTUBE FIBER HAVING IMPROVED PHYSICAL PROPERTIES AND METHOD FOR MANUFACTURING SAME

The present disclosure relates to a carbon nanotube fiber having improved physical properties and a method for manufacturing the same. The method according to the present disclosure comprises the steps of: spinning carbon nanotubes with a purity of 90% by weight or more to obtain a first carbon nanotube fiber; and heat-treating the first carbon nanotube fiber at 500 to 3,000° C. under an inert gas atmosphere to obtain a second carbon nanotube fiber, wherein the second carbon nanotube fiber has a density of 1.0 to 2.5 g/cm.sup.3.

Polycrystalline cubic boron nitride and method for manufacturing the same

A polycrystalline cubic boron nitride comprising 98.5% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×10.sup.15/m.sup.2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of 0.1 μm or more and 0.5 μm or less.

A METHOD OF PREPARING AN ELECTRODE MATERIAL FOR LITHIUM-ION BATTERIES

The present invention discloses a method of preparing an electrode material for lithium-ion batteries comprising the steps of preparing a mixture of precursors taken in predefined stoichiometric ratios for synthesis of lithium iron phosphate (LiFePO4), adding niobium pentoxide as a precursor for doping of niobium at Li+ site of LiFePO.sub.4 for synthesis of niobium doped LiFePO.sub.4 and ball milling operation provides nano sized powder particles. Now, a precursor of carbon is added to said mixture of precursors for synthesizing and obtaining carbon coated niobium doped LiFePO.sub.4 nano sized powder particles. Pellets of required size are prepared and sintered. The obtained pellets are structurally characterized.

ARTIFICIAL GRAPHITE, SECONDARY BATTERY, METHOD FOR THE PREPARATION THEREOF, AND APPARATUS

The present application discloses an artificial graphite, a secondary battery, a preparation method and an apparatus. The artificial graphite includes secondary particles formed by agglomeration of primary particles, the artificial graphite having a volume average particle size Dv50, denoted as A, the artificial graphite through powder compaction under a pressure of 2000 kg having a volume average particle size Dv50, denoted as B, wherein A and B satisfies: B/A≥0.85. Using the artificial graphite provided by the present application can greatly reduce the cyclic expansion of the secondary battery.

HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILM
20210380418 · 2021-12-09 · ·

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

CARBONACEOUS MATERIAL FOR SODIUM ION SECONDARY BATTERY NEGATIVE ELECTRODE, AND SODIUM ION SECONDARY BATTERY USING CARBONACEOUS MATERIAL FOR SODIUM ION SECONDARY BATTERY NEGATIVE ELECTRODE

The purpose of the present invention is to provide a sodium ion secondary battery that has high discharge capacity, excellent cycling characteristics, and excellent storage characteristics. The present invention achieves said purpose by means of a carbonaceous material for a sodium ion secondary battery negative electrode. The carbon source of the carbonaceous material is a plant, and the carbonaceous material is characterized by having a BET specific surface area of 100 m.sup.2/g or less.

Zinc oxide varistor and method for manufacturing same

Focus is on zinc oxide itself, which is a base material for a zinc oxide varistor (laminated varistor), wherein specified quantities of additives are added to a zinc oxide powder having a crystallite size of 20 to 50 nm, grain diameter of 15 to 60 nm found using the specific surface area BET method, untamped density of 0.38 to 0.50 g/cm.sup.3, and tap density of 0.50 to 1.00 g/cm.sup.3. This allows securing of uniformity, high compactness, and high electrical conductivity of a zinc oxide sintered body, and provision of a zinc oxide varistor having high surge resistance.