The present disclosure provides a cobalt-free cathode material of a lithium ion battery, a method for preparing the cobalt-free cathode material, and the lithium ion battery. A general formula of the cobalt-free cathode material is Li.sub.xNi.sub.aMn.sub.bR.sub.cO.sub.2, wherein, 1≤x≤1.15, 0.5≤a≤0.95, 0.02≤b≤0.48, 0<c≤0.05, and R is aluminum or tungsten. Therefore, as the cobalt-free cathode material is free of metal cobalt, the cost of the cathode material can be lowered effectively. Aluminum or tungsten in the cobalt-free cathode material can stabilize a crystal structure of the cathode material better, such that the lithium ion battery has excellent rate capability and cycle performance, and furthermore, good cycling stability of the lithium ion battery can be still maintained under a high-temperature and high-pressure testing condition.

The present exemplary embodiments relate to a cathode active material, a manufacturing method thereof, and a lithium secondary battery including the same. A cathode active material according to an exemplary embodiment is a lithium metal oxide particle in the form of a secondary particle including a primary particle, a coating layer including a boron compound is positioned on at least a portion of a surface of the primary particle, and the boron compound includes an amorphous structure.

Embodiments relate to a method for fabricating a sintered sodium-ion material. The method involves mixing a parent phase sodium-ion compound with a secondary transient phase to form a powder mixture. The method involves applying pressure and heat above a melting point or boiling point of the secondary transient phase to drive dissolution at particle contacts and subsequent precipitation at newly formed grain boundaries. The method involves generating a sintered sodium-ion material with >90% relative density.

The invention relates to active electrode materials and to methods for the manufacture of active electrode materials. Such materials are of interest as active electrode materials in lithium-ion or sodium-ion batteries. The invention provides an active electrode material expressed by the general formula [M][Nb].sub.y[O].sub.z; wherein the active electrode material is oxygen deficient; wherein M consists of one of Mg, Cr, W, Mo, Cu, Ga, Ge, Ca, K, Ni, Co, Al, Sn, Mn, Ce, Sb, Y, La, Hf, Ta, Zn, In, or Cd; y satisfies 0.5≤y≤49; and z satisfies 4≤z≤124.

According to an embodiment, there is provided an electrode including an active material-containing layer. A logarithmic differential pore volume distribution curve of the active material-containing layer by a mercury intrusion method includes first and second peaks. The first peak is a local maximum value in a range where a pore size is from 0.1 μm or more to 0.5 μm or less. The second peak is a local maximum value in a range where the pore size is from 0.5 μm or more to 1.0 μm or less. An intensity A1 of the first peak and an intensity A2 of the second peak satisfy 0.1≤A2/A1≤0.3. A density of the active material-containing layer is from 2.9 g/cm.sup.3 or more to 3.3 g/cm.sup.3 or less.

A cristobalite includes: a d50 particle size selected within a range of from 1 μm to 15 μm; an L color coordinate of greater than 96; a color coordinate of less than 1; and a b color coordinate of 1 or less, in which the cristobalite is a powder. Also provided are compositions containing the cristobalite, coatings formed with compositions, and methods of preparing cristobalite.

Compositions made of laminate comprised of porous carbon nanotube (CNT) are disclosed. Uses of the Compositions, particularly for reducing a formation of a load of a microorganism or of a biofilm, are also disclosed.

Cathode active material in particulate form with a mean particle diameter in the range from 2 to 16 .Math.m (D50), wherein the cathode active material has the composition Li.sub.1+xTM.sub.1-xO.sub.2 wherein x is in the range of from 0.1 to 0.2 and TM is a combination of elements according to general formula (I), (Ni.sub.aCo.sub.bMn.sub.c).sub.1-d-eM.sup.1.sub.dM.sup.2.sub.e where the variables are each defined as follows: a is in the range from 0.20 to 0.40, b is in the range of from zero to 0.15, c is in the range of from 0.50 to 0.75, d is in the range of from zero to 0.015, and e is in the range of from zero to 0.02, M.sup.1 is selected from Al, Ti, Zr, Mo, W, Fe, Nb, and Mg, M.sup.2 is selected from B and K, with a + b + c = 1.0 wherein said composite oxide has a specific surface (BET) in the range from 0.5 m.sup.2/gto 10 m.sup.2/gand a pressed density of at least 2.9 g/cm.sup.3, and wherein said cathode active material has an average primary particle diameter in the range of from 200 to 3,000 nm.

A cerium-zirconium-aluminum-based composite material, a cGPF catalyst and a preparation method thereof are provided. The cerium-zirconium-aluminum-based composite material adopts a stepwise precipitation method, firstly preparing an aluminum-based pre-treated material, then coprecipitating the aluminum-based pre-treated material with zirconium and cerium sol, and finally roasting at high temperature to obtain the cerium-zirconium-aluminum-based composite material. The cerium-zirconium-aluminum-based composite material has better compactness and higher density, and when it is used in cGPF catalyst, it occupies a smaller volume of pores on the catalyst carrier, such that cGPF catalyst has lower back pressure and better ash accumulation resistance, which is beneficial to large-scale application of cGPF catalyst.

A silicon carbide single crystal wafer and a preparation method therefor, a silicon carbide crystal and a preparation method therefor, and a semiconductor device. The surface of the silicon carbide single crystal wafer is such that an included angle between a normal direction and a c direction is 0-8 degrees, and aggregated dislocations on the silicon carbide single crystal wafer are less than 300/cm.sup.2; the aggregated dislocation is a dislocation aggregated condition in which the distance between the geometric centers of any two corrosion pits in the corrosion pits obtained after corrosion of melted KOH is less than 80 microns. Even if the dislocation density is relatively high, the aggregated dislocation density is relatively small, thereby increasing the yield of a silicon carbide-based devices.