A system for creating targeted vanadium oxide (VO.sub.2) nanoparticle compositions comprising a stock reaction mixture that is a fluid combination of at least one vanadium source combined with at least one dopant source. Each dopant source contains at least one target dopant element. The ratio of the number of vanadium atoms in the vanadium source to the number of target dopant element atoms in the dopant source is less than or equal to 10:1. A solvent that is compatible with said stock reaction mixture is selected. A pressure regulator increases the pressure of the solvent and the stock reaction mixture to between 0 and 5,000 psi. A heating element increases the temperature of the solvent to between 50 and 500° C. A mixing unit receives and mixes a continuous flow of stock reaction mixture with solvent to heat the stock reaction mixture and initiate formation of the targeted vanadium oxide (VO.sub.2) nanoparticle composition.

The present invention relates to a coating of the surface of an electrical household appliance comprising a decoration (a) comprising a pigmentary compound B1VO4 having a ΔE* in the coating greater than or equal to 11 between ambient temperature and 150° C., ΔE* being defined by the formula CIE1976 in the CIELAB colour space: Formula (I): L1*, a1* and b1* characterising the values L*a*b* of said compound at ambient temperature; L2*, a2* and b2* characterising the values L*a*b* of said compound at 150° C.

The alumina powder contains: a first alumina particle having an average particle diameter of 0.1 .Math.m or more and less than 1 .Math.m; a second alumina particle having an average particle diameter of 1 .Math.m or more and less than 10 .Math.m; and a third alumina particle having an average particle diameter of 10 .Math.m or more and 100 .Math.m or less, wherein each of the average particle diameters is a particle diameter measured using laser light diffraction scattering particle size distribution analyzer, average sphericity of first alumina particle having projected area equivalent circle diameter of 0.1 .Math.m or more and 1 .Math.m or less as determined by microscopy is 0.80 or more and 0.98 or less, a specific surface area of first alumina particle is 1.9 m.sup.2/g or more and 20.0 m.sup.2/g or less, and content ratio of an α crystal phase is 80% by mass or more.

The present invention relates to silicon-based powders and a method for producing the silicon-based powders. The method for producing the silicon-based powders includes a hydrolysis step of a silicon precursor having an alkoxy group, a condensation step and a drying step. By a specific weight ratio of water to the silicon precursor having the alkoxy group and a silicon precursor having a secondary amino group and an alkyl group, in the method for producing the silicon-based powders, the condensation step can be performed without organic solvents, and a modification on silicon-based gels can be performed to enhance a safety of processes and a hydrophobicity of the resulted silicon-based powders, and decrease a thermal conductivity and a bulk density of the resulted silicon-based powders.

A super-flexible high thermal conductive graphene film and a preparation method thereof are provided. The graphene film is obtained from ultra large homogeneous graphene sheets through processes of solution film-forming, chemical reduction, high temperature reduction, high pressure suppression and so on. The graphene film has a density in a range of 1.93 to 2.11 g/cm.sup.3, is formed by overlapping planar oriented graphene sheets with an average size of more than 100 μm with each other through π-π conjugate action, and comprises 1 to 4 layers of graphene sheets which have few defects. The graphene film can be repeatedly bent for 1200 times or more, with elongation at break of 12-18%, electric conductivity of 8000-10600 S/cm, thermal conductivity of 1800-2600 W/mK, and can be used as a highly flexible thermal conductive device.

Aligned high quality boron nitride nanotubes (BNNTs) can be incorporated into groups and bundles and placed in electronic and electrical components (ECs) to enhance the heat removal and diminish the heat production. High quality BNNTs are excellent conductors of heat at the nano scale. High quality BNNTs are electrically insulating and can reduce dielectric heating. The BNNTs composite well with a broad range of ceramics, metals, polymers, epoxies and thermal greases thereby providing great flexibility in the design of ECs with improved thermal management. Controlling the alignment of the BNNTs both with respect to each other and the surfaces and layers of the ECs provides the preferred embodiments for ECs.

A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

Provided are a low-viscosity graphene oxide slurry and a preparation method thereof, a graphene oxide film and a preparation method thereof, and a graphene heat-conducting film and a preparation method thereof. A main method used comprises ultramicro-refining graphene oxide under high-pressure shearing, high-speed impacting and a strong cavitation action to reduce a flake diameter of the graphene oxide, thereby reducing a viscosity of the graphene oxide slurry and increasing a solid content of the graphene oxide slurry, so that an efficiency of coating the graphene oxide slurry into the graphene oxide film is improved.

An exemplary embodiment of the present invention provides a filler comprising a silica core, a first layer in communication with the core, and a second layer in communication with the first layer. The presence of the second layer can decrease the coefficient of thermal expansion, decrease the composite modulus, and increase the glass transition temperature of the modulus as compared to fillers without a second layer.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.