A method for obtaining a glass plate marked on a portion of one of its faces with code-forming symbols, includes a stage of etching the symbols by laser radiation on a glass sheet obtained by floating on a bath of molten tin, the etching being carried out on the face which has been in contact with the bath of molten tin.

A method for obtaining a glass plate marked on a portion of one of its faces with code-forming symbols, includes a stage of etching the symbols by laser radiation on a glass sheet obtained by floating on a bath of molten tin, the etching being carried out on the face which has been in contact with the bath of molten tin.

A glass substrate that achieves a high strain point while having a low devitrification temperature; and a method for producing the glass substrate. This glass substrate for a display is made of a glass comprising SiO.sub.2 and Al.sub.2O.sub.3, comprising 0% or more to less than 4% B.sub.2O.sub.3 in mass %, and substantially devoiding Sb.sub.2O.sub.3, wherein 3BaO/(MgO+CaO+SrO) is 5 or less, MgO/(CaO+SrO) is 0.36 or greater, the devitrification temperature is 1235 C. or lower, and the strain point is 700 C. or higher. The method comprises: melting, by using at least direct electrical heating, a glass material prepared to have a predetermined composition; forming, into a flat glass sheet, the molten glass that has been melted in the melting step; and annealing the flat glass sheet, wherein a condition for cooling the flat glass sheet is controlled so as to reduce the heat shrinkage rate of the flat glass sheet.

A glass substrate that achieves a high strain point while having a low devitrification temperature; and a method for producing the glass substrate. This glass substrate for a display is made of a glass comprising SiO.sub.2 and Al.sub.2O.sub.3, comprising 0% or more to less than 4% B.sub.2O.sub.3 in mass %, and substantially devoiding Sb.sub.2O.sub.3, wherein 3BaO/(MgO+CaO+SrO) is 5 or less, MgO/(CaO+SrO) is 0.36 or greater, the devitrification temperature is 1235 C. or lower, and the strain point is 700 C. or higher. The method comprises: melting, by using at least direct electrical heating, a glass material prepared to have a predetermined composition; forming, into a flat glass sheet, the molten glass that has been melted in the melting step; and annealing the flat glass sheet, wherein a condition for cooling the flat glass sheet is controlled so as to reduce the heat shrinkage rate of the flat glass sheet.

The present disclosure provides the installation of an apparatus for cooling a manufactured glass rod. The apparatus has at least two cooling chambers arranged along the glass strand for sectional cooling of the glass strand. A gaseous cooling medium is either blown into the cooling chamber or sucked out of the cooling chambers. The glass strand is passed through each cooling chamber, with an orifice provided at each of the pass-through points, whose opening is larger than the cross-section or diameter of the glass strand. As a result, an annular gap forms between the opening and the surface of the glass strand, so that a turbulent flow of the gaseous cooling medium is generated, which enables a high cooling rate.

The present disclosure provides the installation of an apparatus for cooling a manufactured glass rod. The apparatus has at least two cooling chambers arranged along the glass strand for sectional cooling of the glass strand. A gaseous cooling medium is either blown into the cooling chamber or sucked out of the cooling chambers. The glass strand is passed through each cooling chamber, with an orifice provided at each of the pass-through points, whose opening is larger than the cross-section or diameter of the glass strand. As a result, an annular gap forms between the opening and the surface of the glass strand, so that a turbulent flow of the gaseous cooling medium is generated, which enables a high cooling rate.

A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

A furnace for relieving glass products of stress is provided. The furnace has a furnace interior and a thermal element that measures temperatures in the furnace interior. The thermal element is enclosed by an enveloping tube composed of an inorganic material.

A furnace for relieving glass products of stress is provided. The furnace has a furnace interior and a thermal element that measures temperatures in the furnace interior. The thermal element is enclosed by an enveloping tube composed of an inorganic material.

A method of forming a dissolvable part of amorphous borate includes: preparing a mixture comprising one or more boron compounds and one or more alkali compounds, at least one of the one or more boron compounds and the one or more alkali compounds being hydrous; heating the mixture to a melting temperature for a predetermined time to melt the mixture and release water from the mixture to form an anhydrous boron compound that is moldable, wherein the amount of alkali compound being selected to achieve an alkali oxide content of between about 10 to 25%; with the anhydrous boron compound at a molding temperature, molding the anhydrous boron compound in a mold; and cooling the anhydrous boron compound to form a solid.