The present invention is directed to a silver paste for a Si solar cell comprising a high purity Bi.sub.2O.sub.3 additive and a solar cell having a silicon wafer with the silver paste on its front-side surface. The resultant cell exhibits improved efficiency.

The present invention is directed to a silver paste for a Si solar cell comprising a high purity Bi.sub.2O.sub.3 additive and a solar cell having a silicon wafer with the silver paste on its front-side surface. The resultant cell exhibits improved efficiency.

Pastes are disclosed that are configured to coat a passage of a substrate. When the paste is sintered, the paste becomes electrically conductive so as to transmit electrical signals from a first end of the passage to a second end of the passage that is opposite the first end of the passage. The metallized paste contains a lead-free glass frit, and has a coefficient of thermal expansion sufficiently matched to the substrate so as to avoid cracking of the sintered paste, the substrate, or both, during sintering.

Pastes are disclosed that are configured to coat a passage of a substrate. When the paste is sintered, the paste becomes electrically conductive so as to transmit electrical signals from a first end of the passage to a second end of the passage that is opposite the first end of the passage. The metallized paste contains a lead-free glass frit, and has a coefficient of thermal expansion sufficiently matched to the substrate so as to avoid cracking of the sintered paste, the substrate, or both, during sintering.

A main object of the present invention is to provide a method for manufacturing a sulfide solid electrolyte that enables a sulfide solid electrolyte whose ion-conducting characteristic is easy to be improved, to be manufactured. The present invention is a method for manufacturing a sulfide solid electrolyte including loading a raw material for manufacturing a sulfide solid electrolyte which is mainly composed of a substance represented by the general formula of (100−x)(0.75Li.sub.2S.0.25P.sub.2S.sub.5).xLiI (here, 0<x<100), into a vessel; and amorphizing the raw material after said loading, wherein a reaction site temperature in the vessel is controlled so that x included in the general formula and the reaction site temperature y [° C.] in the vessel in said amorphizing satisfy y<−2.00x+1.79×10.sup.2.

A main object of the present invention is to provide a method for manufacturing a sulfide solid electrolyte that enables a sulfide solid electrolyte whose ion-conducting characteristic is easy to be improved, to be manufactured. The present invention is a method for manufacturing a sulfide solid electrolyte including loading a raw material for manufacturing a sulfide solid electrolyte which is mainly composed of a substance represented by the general formula of (100−x)(0.75Li.sub.2S.0.25P.sub.2S.sub.5).xLiI (here, 0<x<100), into a vessel; and amorphizing the raw material after said loading, wherein a reaction site temperature in the vessel is controlled so that x included in the general formula and the reaction site temperature y [° C.] in the vessel in said amorphizing satisfy y<−2.00x+1.79×10.sup.2.

A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

The present disclosure relates to a lithium ion conductive material, preferably a lithium ion conductive glass ceramic, the material including a garnet-type crystalline phase content and an amorphous phase content. The material has a sintering temperature of 1000° C. or lower, preferably 950° C. or lower and an ion conductivity of at least 1*10.sup.−5 S/cm, preferably at least 2*10.sup.−5 S/cm, preferably at least 5*10.sup.−5 S/cm, preferably at least 1*10.sup.−4 S/cm, and the amorphous phase content includes boron and/or a composition including boron.

The present disclosure relates to a lithium ion conductive material, preferably a lithium ion conductive glass ceramic, the material including a garnet-type crystalline phase content and an amorphous phase content. The material has a sintering temperature of 1000° C. or lower, preferably 950° C. or lower and an ion conductivity of at least 1*10.sup.−5 S/cm, preferably at least 2*10.sup.−5 S/cm, preferably at least 5*10.sup.−5 S/cm, preferably at least 1*10.sup.−4 S/cm, and the amorphous phase content includes boron and/or a composition including boron.