The present disclosure provides a novel glass composition that has a low permittivity and is suitable for mass production. A glass composition provided satisfies, in wt %, for example, 40≤SiO.sub.2≤60, 25≤B.sub.2O.sub.3≤45, 0<Al.sub.2O.sub.3≤18, 0<R.sub.2O≤5, and 0≤RO≤12, and satisfies at least one of: i) SiO.sub.2+B.sub.2O.sub.3≥80 and SiO.sub.2+B.sub.2O.sub.3+Al.sub.2O.sub.3≤99.9; and ii) SiO.sub.2+B.sub.2O.sub.3≥78, SiO.sub.2+B.sub.2O.sub.3+Al.sub.2O.sub.3≤99.9, and 0<RO<10. Another glass composition provided includes SiO.sub.2, B.sub.2O.sub.3, Al.sub.2O.sub.3, R.sub.2O, and 3<RO<8 at the same contents as the above, and satisfies SiO.sub.2+B.sub.2O.sub.3≥75 and SiO.sub.2+B.sub.2O.sub.3+Al.sub.2O.sub.3<97, where R.sub.2O=Li.sub.2O+Na.sub.2O+K.sub.2O and RO=MgO+CaO+SrO.

ZrO.sub.2-toughened glass ceramics having high molar fractions of tetragonal ZrO.sub.2 and fracture toughness value of greater than 1.8 MPa.Math.m.sup.1/2. The glass ceramic may also include also contain other secondary phases, including lithium silicates, that may be beneficial for toughening or for strengthening through an ion exchange process. Additional second phases may also decrease the coefficient of thermal expansion of the glass ceramic. A method of making such glass ceramics is also provided.

ZrO.sub.2-toughened glass ceramics having high molar fractions of tetragonal ZrO.sub.2 and fracture toughness value of greater than 1.8 MPa.Math.m.sup.1/2. The glass ceramic may also include also contain other secondary phases, including lithium silicates, that may be beneficial for toughening or for strengthening through an ion exchange process. Additional second phases may also decrease the coefficient of thermal expansion of the glass ceramic. A method of making such glass ceramics is also provided.

A dielectric tape suitable for use in an electronic device is provided. A dielectric slip composition comprises an organic vehicle and a dielectric glass composition comprising at least about 20 wt % and no more than about 50 wt % silicon dioxide, based upon 100% total weight of the glass composition, at least about 10 wt % and no more than about 50 wt % alkali metal oxides, based upon 100% total weight of the glass composition, and at least about 1 wt % and no more than about 10 wt % of at least one transition metal oxide. A method of forming an electronic device is also provided. The method includes the steps of applying at least one dielectric tape to at least one non-planar surface of a substrate, and subjecting the at least one dielectric tape to one or more thermal treatment steps to form a dielectric layer.

A dielectric tape suitable for use in an electronic device is provided. A dielectric slip composition comprises an organic vehicle and a dielectric glass composition comprising at least about 20 wt % and no more than about 50 wt % silicon dioxide, based upon 100% total weight of the glass composition, at least about 10 wt % and no more than about 50 wt % alkali metal oxides, based upon 100% total weight of the glass composition, and at least about 1 wt % and no more than about 10 wt % of at least one transition metal oxide. A method of forming an electronic device is also provided. The method includes the steps of applying at least one dielectric tape to at least one non-planar surface of a substrate, and subjecting the at least one dielectric tape to one or more thermal treatment steps to form a dielectric layer.

A lead-through or connecting element is provided that includes an assembly having a carrier body of a high-temperature alloy, a functional element, and an at least partially crystallized glass. The crystallized glass is between a portion of the functional element and a portion of the carrier body. The carrier body subjects the crystallized glass to a compressive stress of greater than or equal to zero, at a temperature from at least 20° C. to more than 450° C. Also provided are a method for producing a lead-through or connecting element, the use of such a lead-through or connecting element, and to a measuring device including such a lead-through or connecting element.

A lead-through or connecting element is provided that includes an assembly having a carrier body of a high-temperature alloy, a functional element, and an at least partially crystallized glass. The crystallized glass is between a portion of the functional element and a portion of the carrier body. The carrier body subjects the crystallized glass to a compressive stress of greater than or equal to zero, at a temperature from at least 20° C. to more than 450° C. Also provided are a method for producing a lead-through or connecting element, the use of such a lead-through or connecting element, and to a measuring device including such a lead-through or connecting element.

The present invention is a low dielectric resin substrate, which is a composite including an annealed quartz glass cloth and an organic resin, where the annealed quartz glass cloth has a dielectric loss tangent of less than 0.0010 at 10 GHz, and tensile strength of 1.0 N/25 mm or more per cloth weight (g/m.sup.2). This provides a resin substrate that includes a quartz glass cloth which has a low dielectric loss tangent and which is also excellent in tensile strength.

The present invention is an annealed quartz glass cloth that has an SiO.sub.2 content of 99.5 mass % or more, a dielectric loss tangent of less than 0.0010 at 10 GHz, and a tensile strength of 1.0 N/25 mm or more per cloth weight (g/m.sup.2). This provides an annealed quartz glass cloth that has a low dielectric loss tangent and that is also excellent in tensile strength; and a method for manufacturing an annealed quartz glass cloth by which strength recovers after a high-temperature heat treatment.

A glass material with a low dielectric constant attributable to a high weight percentage of boron trioxide includes at least one component for forming the main constructure of the glass material, a fluxing component, a reinforcing component, and a modifier; wherein the at least one component for forming the main constructure of the glass material includes silicon dioxide (SiO.sub.2); the fluxing component includes boron trioxide (B.sub.2O.sub.3); the reinforcing component includes aluminum oxide (Al.sub.2O.sub.3); and the modifier includes calcium oxide (CaO). The glass material is characterized in that it has a boron trioxide (B.sub.2O.sub.3) content by weight of 30%-40%, which is higher than those in the prior art; a calcium oxide (CaO) content by weight of 1%-6%, which is lower than those in the prior art; and consequently a lower dielectric constant and a lower dissipation factor of the glass material than those in the prior art can be obtained.