A glass material with a low dielectric constant attributable to a high weight percentage of boron trioxide includes at least one component for forming the main constructure of the glass material, a fluxing component, a reinforcing component, and a modifier; wherein the at least one component for forming the main constructure of the glass material includes silicon dioxide (SiO.sub.2); the fluxing component includes boron trioxide (B.sub.2O.sub.3); the reinforcing component includes aluminum oxide (Al.sub.2O.sub.3); and the modifier includes calcium oxide (CaO). The glass material is characterized in that it has a boron trioxide (B.sub.2O.sub.3) content by weight of 30%40%, which is higher than those in the prior art; a calcium oxide (CaO) content by weight of 1%6%, which is lower than those in the prior art; and consequently a lower dielectric constant and a lower dissipation factor of the glass material than those in the prior art can be obtained.

The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20 C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20 C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of 40 to 150 C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20 C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20 C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of 40 to 150 C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.

The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20 C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20 C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of 40 to 150 C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20 C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20 C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of 40 to 150 C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.

Doped, low-temperature co-fired ceramic (LTCC) insulating substrates and related wiring boards and methods of manufacture are disclosed. The doped, LTCC insulating substrate is formed from a baked (e.g., sintered) glass-ceramic aggregate material formed from a glass material, a ceramic filler material, and a composite oxide. The crystallized glass-ceramic aggregate is then doped with Iron and/or Manganese before baking. Iron or Manganese can further reduce dielectric loss and the loss tangent of the LTCC insulating substrate formed from that glass material. The glass material becomes crystallized due to an oxide crystal phase being deposited on the glass material during baking, which reduces the dielectric losses. This may be important for the application use as wiring boards for high radio-frequency (RF) electrical circuits where low dielectric loss and loss tangent is desired to achieve a desired signal transmission delay performance.

Doped, low-temperature co-fired ceramic (LTCC) insulating substrates and related wiring boards and methods of manufacture are disclosed. The doped, LTCC insulating substrate is formed from a baked (e.g., sintered) glass-ceramic aggregate material formed from a glass material, a ceramic filler material, and a composite oxide. The crystallized glass-ceramic aggregate is then doped with Iron and/or Manganese before baking. Iron or Manganese can further reduce dielectric loss and the loss tangent of the LTCC insulating substrate formed from that glass material. The glass material becomes crystallized due to an oxide crystal phase being deposited on the glass material during baking, which reduces the dielectric losses. This may be important for the application use as wiring boards for high radio-frequency (RF) electrical circuits where low dielectric loss and loss tangent is desired to achieve a desired signal transmission delay performance.

Doped, low-temperature co-fired ceramic (LTCC) insulating substrates and related wiring boards and methods of manufacture are disclosed. The doped, LTCC insulating substrate is formed from a baked (e.g., sintered) glass-ceramic aggregate material formed from a glass material, a ceramic filler material, and a composite oxide. The crystallized glass-ceramic aggregate is then doped with Iron and/or Manganese before baking. Iron or Manganese can further reduce dielectric loss and the loss tangent of the LTCC insulating substrate formed from that glass material. The glass material becomes crystallized due to an oxide crystal phase being deposited on the glass material during baking, which reduces the dielectric losses. This may be important for the application use as wiring boards for high radio-frequency (RF) electrical circuits where low dielectric loss and loss tangent is desired to achieve a desired signal transmission delay performance.

Doped, low-temperature co-fired ceramic (LTCC) insulating substrates and related wiring boards and methods of manufacture are disclosed. The doped, LTCC insulating substrate is formed from a baked (e.g., sintered) glass-ceramic aggregate material formed from a glass material, a ceramic filler material, and a composite oxide. The crystallized glass-ceramic aggregate is then doped with Iron and/or Manganese before baking. Iron or Manganese can further reduce dielectric loss and the loss tangent of the LTCC insulating substrate formed from that glass material. The glass material becomes crystallized due to an oxide crystal phase being deposited on the glass material during baking, which reduces the dielectric losses. This may be important for the application use as wiring boards for high radio-frequency (RF) electrical circuits where low dielectric loss and loss tangent is desired to achieve a desired signal transmission delay performance.

A multilayer coil component includes a component element assembly in which an inner conductor is disposed and an outer electrode disposed on the surface of the component element assembly. The component element assembly includes a first dielectric glass layer in which the inner conductor is embedded and second dielectric glass layers that are thin layers disposed on respective principal surfaces of the first dielectric glass layer. The primary component of each of the first dielectric glass layer and the second dielectric glass layers is formed of a glass material and has a filler component containing at least quartz, and the second dielectric glass layers have a lower quartz content than the first dielectric glass layer.

A multilayer coil component includes a component element assembly in which an inner conductor is disposed and an outer electrode disposed on the surface of the component element assembly. The component element assembly includes a first dielectric glass layer in which the inner conductor is embedded and second dielectric glass layers that are thin layers disposed on respective principal surfaces of the first dielectric glass layer. The primary component of each of the first dielectric glass layer and the second dielectric glass layers is formed of a glass material and has a filler component containing at least quartz, and the second dielectric glass layers have a lower quartz content than the first dielectric glass layer.

A silica glass for a radio-frequency device has an OH group concentration being less than or equal to 300 wtppm; an FQ value being higher than or equal to 90,000 GHz at a frequency of higher than or equal to 25 GHz and lower than or equal to 30 GHz; and a slope being greater than or equal to 1,000 in a case where the FQ value is approximated as a linear function of the frequency in a frequency band of higher than or equal to 20 GHz and lower than or equal to 100 GHz.