A fired hybrid enamel coating is provided. The hybrid enamel coating is formed by firing an enamel composition on a substrate. The enamel composition includes at least a first glass frit, which is sintered to form the hybrid enamel coating. The hybrid enamel coating can be cleaned using aqualytic or pyrolytic cleaning methods, and does not discolor or lose gloss when subject to typical pyrolytic cleaning methods. The hybrid enamel coating does not require the application of highly caustic cleaners to remove the baked-on soils.

Certain example embodiments of this invention relate to vacuum insulating glass (VIG) units having improved seals made using two different frit-based edge seal materials, and/or methods of making the same. In certain example embodiments, a first frit material is applied around peripheral edges of first and second glass substrates. The first frit material, which may be bismuth-based in certain example embodiments, is fired with a heat treatment (e.g., thermal tempering) process. A second frit material, which may be VBZ-based in certain example embodiments, is applied and at least partially overlaps with the fired first frit material. The first frit material acts as a primer, and the second frit material helps seal together the VIG unit. The second frit material is fired at a significantly lower temperature that enables the glass to retain the temper or other strength imparted by the heat treatment.

Certain example embodiments of this invention relate to vacuum insulating glass (VIG) units having improved seals made using two different frit-based edge seal materials, and/or methods of making the same. In certain example embodiments, a first frit material is applied around peripheral edges of first and second glass substrates. The first frit material, which may be bismuth-based in certain example embodiments, is fired with a heat treatment (e.g., thermal tempering) process. A second frit material, which may be VBZ-based in certain example embodiments, is applied and at least partially overlaps with the fired first frit material. The first frit material acts as a primer, and the second frit material helps seal together the VIG unit. The second frit material is fired at a significantly lower temperature that enables the glass to retain the temper or other strength imparted by the heat treatment.

A conductive paste composition comprises (i) an inorganic powder comprising at least a conductive powder, (ii) at least one microgel polymer, and (iii) a solvent. The paste composition may be used in a process for manufacturing an electrical device comprising: preparing a substrate; applying the conductive paste onto the substrate in a preselected pattern; and heating the applied conductive paste to form a conductive structure that provides an electrode for connecting the device. The paste composition beneficially permits the formation of narrow, high aspect ratio features in the conductive structure.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

A photosensitive glass paste contains a photosensitive organic component and an inorganic component containing a glass powder having a high softening point, a glass powder having a low softening point, and a ceramic filler. The ceramic filler has a thermal expansion coefficient of 1010.sup.6/ C. to 1610.sup.6/ C., the inorganic component contains 30% to 50% by volume of the ceramic filler, and the inorganic component contains 0.5% to 10% by volume of the glass powder having a low softening point.

A photosensitive glass paste contains a photosensitive organic component and an inorganic component containing a glass powder having a high softening point, a glass powder having a low softening point, and a ceramic filler. The ceramic filler has a thermal expansion coefficient of 1010.sup.6/ C. to 1610.sup.6/ C., the inorganic component contains 30% to 50% by volume of the ceramic filler, and the inorganic component contains 0.5% to 10% by volume of the glass powder having a low softening point.

A passivation glass coating composition is provided for forming a fired passivation glass layer on a semiconductor substrate having p-n junction. The passivation glass coating composition includes a glass component that is lead free, cadmium free, alkali metal oxides free, and colored transition metal oxides (i.e. metal oxides of V, Fe, Co, Ni, Cr, Cu, Mn) free. The glass component includes bismuth based glasses, and provides a firing temperature range of 500 C. to 900 C., and controlled devitrification. Once fired to a semiconductor device, the fired passivation glass layer provides exceptional device performance including no cracking of the fired passivation glass layer, excellent thermal expansion matching to silicon, good chemical resistance to acid and base, and improved device performance.

A passivation glass coating composition is provided for forming a fired passivation glass layer on a semiconductor substrate having p-n junction. The passivation glass coating composition includes a glass component that is lead free, cadmium free, alkali metal oxides free, and colored transition metal oxides (i.e. metal oxides of V, Fe, Co, Ni, Cr, Cu, Mn) free. The glass component includes bismuth based glasses, and provides a firing temperature range of 500 C. to 900 C., and controlled devitrification. Once fired to a semiconductor device, the fired passivation glass layer provides exceptional device performance including no cracking of the fired passivation glass layer, excellent thermal expansion matching to silicon, good chemical resistance to acid and base, and improved device performance.