A substrate includes a first surface area; and a second surface area with a second roughness value. In a height profile of the substrate along a cutting line crossing the first surface area and the second surface area, a height of the substrate along a first section of the height profile is larger than the height of the substrate along a second section of the height profile. In the height profile an absolute value of a height difference between a point of maximum height or an averaged height, respectively, of the second section and a point of minimal height or an averaged height, respectively, of the first section defines a depth value. A ratio of the depth value and the second roughness value is between 2 and 35. A marking element extends across the first surface area and the second surface area.

A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 m1 m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 m.sup.1 is not more than 17 nm.sup.4.

A quartz glass container is shown and described herein. The quartz glass container exhibits a low concentration of surface defects on an inner surface of the container. In aspects hereof, the container may have a surface defect density of 50 or fewer surface defects per square centimeter within a 1 cm band centered 1 cm from the base of the container.

A glass etching composition contains a base etching solution for etching glass and a syrup made from hydrolysis of starch. The syrup contains at least one selected from the group consisting of glucose, maltose, and dextrin. The base etching solution contains hydrogen fluoride, ammonium fluoride, and water. The glass etching composition further contains at least one selected from the group consisting of starch powder, Fibersol, pectin, and guar gum. A method of manufacturing anti-glare glass includes etching glass using a first glass etching solution by screen printing. The first glass etching solution contains a base etching solution for etching glass and a syrup made from hydrolysis of starch. The glass has higher chemical durability than soda-lime glass. The method further includes etching the glass with a second glass etching solution after etching the glass using the first glass etching solution.

A glass article having a dimpled glass bump formed integrally thereon by laser-irradiation methods. The glass bump includes a lower region connected to an upper region by an inflection region. The lower region projects from a surface of the glass article and is defined by concavely rounded sides with a radius of curvature R1. The upper region includes a transition portion and a top surface. The transition portion is defined by convexly rounded sides with a radius of curvature R2. The transition portion connects to the lower portion via the inflection region. The upper portion connects to the transition portion and is defined by a concavely rounded top portion between convexly rounded top portions.

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

Methods of forming vias in substrates having at least one damage region extending from a first surface etching the at least one damage region of the substrate to form a via in the substrate, wherein the via extends through the thickness T of the substrate while the first surface of the substrate is masked. The mask is removed from the first surface of the substrate after etching and upon removal of the mask the first surface of the substrate has a surface roughness (Rq) of about less than 1.0 nm.

The present disclosure provides a solar cell assembly, comprising a front plate, a front glue film layer, a cell piece array, a back glue film layer and a back plate which are sequentially stacked, wherein the front plate comprises glass, a side, deviating from the cell piece array, of the glass is provided with one or more light scattering units, and each light scattering unit is of a sunken structure formed when the side, deviating from the cell piece array, of the glass is sunken inwards towards a side, adjacent to the cell piece array, of the glass. The present disclosure provides that the light scattering unit is not needed to correspond to a non-gate line portion of a cell piece, a requirement for type correspondence of the glass and the cell piece is not high, it is guaranteed that a whole silicon wafer can utilize incident light rays very well, a light receiving area of the glass is increased, assembly power is improved, and assembly installing cost is lowered.

An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 m1 m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 m.sup.1 is not more than 17 nm.sup.4.

The present invention relates to a translucent structure having a surface unevenness shape which has: an area ratio of surface flat regions in which an angle formed with a flat surface is in a range of 0 to 0.5 of in a range of 0% to 5.8%; a projection density of in a range of 0.0001/m.sup.2 to 0.05/m.sup.2; a projection area ratio of in a range of 5.5% to 50%; a skewness Ssk which represents the degree of non-symmetry of in a range of 0.5 to 1.1; a load area factor Smr1 at a boundary between a projected mountain portion and a core portion of in a range of 0% to 14.5%; and an arithmetic average surface roughness Sa of in a range of 0.06 m to 0.143 m.