A method for improving the insulating character/and or penetration resistance of a surface comprising lining a surface of a lime kiln, a cement kiln, a roasting kiln, a thermal oxidizer, or a fluidized bed reactor that is subject to wear by an alkali environment and/or an alkaline environment with a refractory composition comprising a refractory aggregate consisting essentially of a calcium hexa aluminate clinker having the formula CA.sub.6, wherein C is equal to calcium oxide, wherein A is equal to aluminum oxide, and wherein the hexa aluminate clinker has from zero to less than about fifty weight percent C.sub.12A.sub.7, and wherein greater than 98 weight percent of the calcium hexa aluminate clinker having a particle size ranging from −20 microns to +3 millimeters, for forming a liner of the surface.

A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.

A solid ionic conducting material for use in an electrochemical device comprises an oxyhydroxide or hydrated oxide derived from of an oxide with a perovskite, Brownmillerite, layered oxide, and/or K.sub.4CdCl.sub.6 structure, the elemental composition of the initial oxide being selected to provide suitable conduction properties for the derived anhydrous or hydrated oxyhydroxide or hydrated oxide. A method of making such a solid ionic conducting material, including treatment with water, and an electrochemical device incorporating such a solid ionic conducting material (optionally as an electrolyte) are also disclosed.

A strongly scattering optoceramic converter material having a density of less than 97% is provided, as well as a method for producing such an optoceramic material. By appropriately choosing in particular the composition, blending method, and sintering conditions, the production method permits to produce converter materials with tailored properties.

A strongly scattering optoceramic converter material having a density of less than 97% is provided, as well as a method for producing such an optoceramic material. By appropriately choosing in particular the composition, blending method, and sintering conditions, the production method permits to produce converter materials with tailored properties.

The method is for use with a substrate having a plurality of parallel channels extending therethrough. In the method, the steps comprise: filling a selected plurality of the channels with a granular material; and consolidating the granular material through heat. The selected plurality of channels is selected to produce a wall that separates the substrate into: a first portion having a first plurality of the parallel channels extending therethrough; and a second portion having a second plurality of the parallel channels extending therethrough.

A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In+Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In+Ga+Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0×10.sup.18 cm.sup.−3 or less and a carrier mobility of 10 cm.sup.−2V.sup.−1sec.sup.−1 or greater.

Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In+Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In+Ga+Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0×10.sup.18 cm.sup.−3 or less and a carrier mobility of 10 cm.sup.−2V.sup.−1sec.sup.−1 or greater.