The invention relates to a method for annealing of at least two wafers bonded via low-temperature direct bonding comprising heating the bonded wafers up to a first annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., holding the first annealing temperature in a range of 1 to 4 hours, preferably 1 to 3 hours, cooling down the bonded wafers to room temperature, re-heating the bonded wafers to a second annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., and cooling down the bonded wafers to room temperature.

Methods of forming joinery between components formed from dissimilar materials, and assemblies utilizing the joinery. The components include interface surfaces having complementary peaks and valleys that interlock. A compliant interface is formed between the interface surfaces and the interface can be configured to provide functionality.

The electrostatic chuck includes an insulating substrate having a placement surface on which a suction target object is placed and an opposite surface provided on an opposite side to the placement surface; and a gas hole penetrating from the opposite surface to the placement surface. The gas hole has a first hole portion extending from the opposite surface toward the placement surface, a second hole portion extending from the placement surface toward the opposite surface, and a third hole portion provided between the first hole portion and the second hole portion and formed to communicate the first hole portion and the second hole portion each other. The first hole portion is provided not to overlap with the second hole portion in a plan view.

This disclosure relates to a polycrystalline diamond (PCD) body comprising a PCD material formed of intergrown diamond grains forming a diamond network, and an iron-containing binder.

Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.

The invention relates to a blank of a ceramic material, wherein a first ceramic material and then a second ceramic material of different compositions are filled into a die and wherein the materials are pressed and after pressing are sintered. A layer of the first ceramic material is thereby filled into the die and a first cavity formed in the layer, the second ceramic material is then filled into the first open cavity and the materials pressed together and then heat-treated.

Disclosed herein are relates to a method for compressing a laminate and a method for manufacturing a ceramic electronic component including a laminate. The method for compressing a laminate includes: preparing a laminate; pressurizing the laminate from a first pressure to a second pressure; heating the laminate from a first temperature to a second temperature; maintaining compression of the laminate at the second pressure and the second temperature for a predetermined time; cooling the laminate from the second temperature to a third temperature; and depressurizing the laminate from the second pressure to a third pressure, wherein the second temperature is 70° C. to 150° C.

The present invention relates to inorganic fibres having a composition comprising: 61.0 to 70.8 wt % SiO.sub.2; 28.0 to 39.0 wt % CaO; 0.10 to 0.85 wt % MgO other components, if any, providing the balance up to 100 wt %,

The sum of SiO.sub.2 and CaO is greater than or equal to 98.8 wt % and the other components comprise less than 0.70 wt % Al.sub.2O.sub.3, if any.

The invention provides a ceramic device enabling more complex, elaborate patterns for resistance heating elements or electrodes. A ceramic device includes a ceramic substrate consisting of a ceramic sintered body and including at least a base layer, an intermediate layer laminated over the base layer, and an overlayer laminated over the intermediate layer; and an electrifiable resistance heating element or electrode having a predetermined pattern extending in a planar shape and being embedded in the ceramic substrate. A horizontal surface is defined in the upper surface of the intermediate layer, along which the resistance heating element or electrode is arranged, and the overlayer is laminated onto the upper surface of the intermediate layer to cover the resistance heating element or electrode.

A thermoelectric conversion material formed of a sintered body containing magnesium silicide as a main component contains 0.5 mass % or more and 10 mass % or less of aluminum oxide. The aluminum oxide is distributed at a crystal grain boundary of the magnesium silicide.