A method for manufacturing a singulated feedthrough insulator for a hermetic seal of an active implantable medical device (AIMD) is described. The method begins with forming a green-state ceramic bar with a via hole filled with a conductive paste. The green-state ceramic bar is dried to convert the paste to an electrically conductive material filling via hole and then subjected to a pressing step. Following pressing, a green-state insulator is singulated from the green-state ceramic bar. The singulated green-state insulator in next sintered to form an insulator that is sized and shaped for hermetically sealing to close a ferrule opening. The thusly produced feedthrough is suitable installation in an opening in the housing of an active implantable medical device.

A method allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic and a metal plating layer on a surface of the other; arranging them so that they are in contact with each other; connecting one of the first member to be joined and the second member to be joined on which the metal plating layer is provided to the negative electrode side of the voltage application device and the other to the positive electrode side; and applying a voltage between the first member to be joined and the second member to be joined to join them together.

A method allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic and a metal plating layer on a surface of the other; arranging them so that they are in contact with each other; connecting one of the first member to be joined and the second member to be joined on which the metal plating layer is provided to the negative electrode side of the voltage application device and the other to the positive electrode side; and applying a voltage between the first member to be joined and the second member to be joined to join them together.

A sputtering target includes at least one single piece with a length of at least 600 mm. The sputtering target has a backing structure provided with target material for sputtering. At least 40% of the mass of the target material includes a so-called target volatile material which shows, at pressures between 700 hPa and 1300 hPa, either a sublimation temperature, or decomposition temperature below its melting point or a melting temperature and an absolute boiling temperature being close to each other. The sputtering target has a target material density of at least 95% of the theoretical density of the target material. The sputtering target includes a bonding layer with a thickness of 0 to 500 μm between the backing structure and the target material.

A sputtering target includes at least one single piece with a length of at least 600 mm. The sputtering target has a backing structure provided with target material for sputtering. At least 40% of the mass of the target material includes a so-called target volatile material which shows, at pressures between 700 hPa and 1300 hPa, either a sublimation temperature, or decomposition temperature below its melting point or a melting temperature and an absolute boiling temperature being close to each other. The sputtering target has a target material density of at least 95% of the theoretical density of the target material. The sputtering target includes a bonding layer with a thickness of 0 to 500 μm between the backing structure and the target material.

A method for preparing a ceramic copper clad laminate is provided, including following steps: providing a copper material; forming a copper oxide layer on a surface of the copper material; thermally treating the copper material on which the copper oxide layer is formed, to diffuse oxygen atoms in the copper material; removing the copper oxide layer on the thermally treated copper material; and soldering the copper-oxide-layer-removed copper material to a ceramic substrate to obtain a ceramic copper clad laminate.

A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.

A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.