Patent classifications
C04B37/02
Ceramic substrate containing aluminum oxide and electrostatic chuck having electrode containing tungsten with oxides
A ceramics substrate includes: a substrate body; and an electric conductor patient that is provided in the substrate body. The substrate body is made of ceramics containing aluminum oxide. The electric conductor pattern is a sintered body that contains tungsten as a main component and further contains nickel oxide, aluminum oxide and silicon dioxide.
Ceramic substrate containing aluminum oxide and electrostatic chuck having electrode containing tungsten with oxides
A ceramics substrate includes: a substrate body; and an electric conductor patient that is provided in the substrate body. The substrate body is made of ceramics containing aluminum oxide. The electric conductor pattern is a sintered body that contains tungsten as a main component and further contains nickel oxide, aluminum oxide and silicon dioxide.
SURFACE-COATED CUTTING TOOL
To provide a surface-coated cutting tool exhibiting excellent wear resistance in a high-speed cutting process and having prolonged service life. The surface-coated cutting tool includes a tool substrate containing WC crystal grains and insulating grains, and a coating layer composed of a multiple nitride of Ti, Al, and V and disposed on the surface of the tool substrate. The multiple nitride is represented by a compositional formula: Ti.sub.aAl.sub.bV.sub.cN satisfying the following relations:
0.25≤a≤0.35,
0.64≤b≤0.74,
0<c≤0.06, and
a+b+c=1
(wherein each of a, b, and c represents an atomic proportion). The coating layer is characterized by exhibiting a peak attributed to a hexagonal crystal phase and a peak attributed to a cubic crystal phase as observed through X-ray diffractometry.
Gallium nitride sintered body or gallium nitride molded article, and method for producing same
The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm.sup.3 to less than 5.0 g/cm.sup.3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.
Bonding dissimilar ceramic components
Adhesive compositions and methods for bonding materials with different thermal expansion coefficients is provided. The adhesive is formulated using a flux material, a low flux material, and a filler material, where the filler material comprises particulate from at least one of the two components being bonded together. A thickening agent can also be used as part of the adhesive composition to aid in applying the adhesive and establishing a desired bond thickness. The method of forming a high strength bond using the disclosed adhesive does not require the use of intermediary layer or the use of high cure temperatures that could damage one or both of the components being bonded together.
Holding device and method for manufacturing holding device
A holding device includes a ceramic member and a base member joined together via a joining portion. When a second direction is perpendicular to a first direction and a third direction is perpendicular to the first and second directions, the joining portion includes a first joining part which extends through the joining portion in the second direction, as viewed in the first direction, and whose thickness in the first direction is uniform in an arbitrary cross section perpendicular to the second direction and in an arbitrary cross section perpendicular to the third direction, and at least one second joining part which is located between the first joining part and one end of the joining portion in the third direction and whose thickness in the first direction increases from the first joining part side toward the end of the joining portion in an arbitrary cross section perpendicular to the second direction.
Device on ceramic substrate
Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.
JOINED BODY, HOLDING DEVICE, AND ELECTROSTATIC CHUCK
A joining layer of a joined body includes a joining material which contains, as a main component, a metal having a surface tension of 1000 mN/m or less at its melting point, and a metal layer which has a plurality of pores formed therein and in which at least some of the pores are impregnated with the joining material.
JOINED BODY, HOLDING DEVICE, AND ELECTROSTATIC CHUCK
A joining layer of a joined body includes a joining material which contains, as a main component, a metal having a surface tension of 1000 mN/m or less at its melting point, and a metal layer which has a plurality of pores formed therein and in which at least some of the pores are impregnated with the joining material.
METHOD FOR PRODUCING A METAL-CERAMIC SUBSTRATE, AND METAL-CERAMIC SUBSTRATE PRODUCED USING A METHOD OF THIS TYPE
The present invention relates to a method for producing a metal-ceramic substrate (1) comprising: —providing a ceramic element (30) and at least one metal layer (10), wherein the ceramic element (30) and the at least one metal layer (10) extend along a main extension plane (HSE), —joining the ceramic element (30) to the at least one metal layer (10) to form a metal-ceramic substrate (1), in particular by means of a direct metal joining method, a hot isostatic pressing method and/or a soldering method, and —machining the at least one metal layer (10) by means of a machine tool (40) and/or laser light in order to define a geometry, at least in some portions, of a side face (15) of the at least one metal layer (10) not running parallel to the main extension plane (HSE).